The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
|Titolo:||Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure|
|Data di pubblicazione:||2016|
|Citazione:||Niu, G., Capellini, G., Hatami, F., Di Bartolomeo, A., Niermann, T., Hussein, E.H., et al. (2016). Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS APPLIED MATERIALS & INTERFACES, 8(40), 26948-26955.|
|Appare nelle tipologie:||1.1 Articolo in rivista|