The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Niu, G., Capellini, G., Hatami, F., Di Bartolomeo, A., Niermann, T., Hussein, E.H., et al. (2016). Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS APPLIED MATERIALS & INTERFACES, 8(40), 26948-26955 [10.1021/acsami.6b09592].

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

CAPELLINI, GIOVANNI;
2016

Abstract

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
Niu, G., Capellini, G., Hatami, F., Di Bartolomeo, A., Niermann, T., Hussein, E.H., et al. (2016). Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS APPLIED MATERIALS & INTERFACES, 8(40), 26948-26955 [10.1021/acsami.6b09592].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/315545
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