The group-IV semiconductor alloy Ge1-x-ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1-x-ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.
Wendav, T., Fischer, I.A., Montanari, M., Zoellner, M.H., Klesse, W., Capellini, G., et al. (2016). Compositional dependence of the band-gap of Ge1-x-YSixSny alloys. APPLIED PHYSICS LETTERS, 108(24), 242104 [10.1063/1.4953784].
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys
MONTANARI, MICHELE;CAPELLINI, GIOVANNI;
2016-01-01
Abstract
The group-IV semiconductor alloy Ge1-x-ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1-x-ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
