A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.
|Titolo:||Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer|
|Data di pubblicazione:||2016|
|Citazione:||Taoka, N., Capellini, G., Von Den Driesch, N., Buca, D., Zaumseil, P., Schubert, M.A., et al. (2016). Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer. APPLIED PHYSICS EXPRESS, 9(3), 031201.|
|Appare nelle tipologie:||1.1 Articolo in rivista|