A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.

Taoka, N., Capellini, G., Von Den Driesch, N., Buca, D., Zaumseil, P., Schubert, M.A., et al. (2016). Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer. APPLIED PHYSICS EXPRESS, 9(3), 031201 [10.7567/APEX.9.031201].

Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

CAPELLINI, GIOVANNI;MONTANARI, MICHELE;
2016

Abstract

A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.
Taoka, N., Capellini, G., Von Den Driesch, N., Buca, D., Zaumseil, P., Schubert, M.A., et al. (2016). Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer. APPLIED PHYSICS EXPRESS, 9(3), 031201 [10.7567/APEX.9.031201].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/315550
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