The force constants related to the bond stretching and angular variation of boron nitride, silicon carbide, aluminium nitride and gallium nitride nanosheets are directly evaluated from ab-initio reference solutions of the Young’s modulus and the Poisson’s ratio. To this end, the analytical expressions of the elastic constants of a generic monolayer hexagonal diatomic sheet are derived, starting from its sticks-and-springs molecular mechanics model, through proper tools of the homogenization of peri- odic discrete media. Num
Genoese, A., Genoese, A., Rizzi, N.L., & Salerno, G. (2018). Force constants of BN, SiC, AlN and GaN sheets through discrete homogenization. MECCANICA, 53(3), 593-611 [10.1007/s11012-017-0686-1].
Titolo: | Force constants of BN, SiC, AlN and GaN sheets through discrete homogenization | |
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Data di pubblicazione: | 2018 | |
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Citazione: | Genoese, A., Genoese, A., Rizzi, N.L., & Salerno, G. (2018). Force constants of BN, SiC, AlN and GaN sheets through discrete homogenization. MECCANICA, 53(3), 593-611 [10.1007/s11012-017-0686-1]. | |
Handle: | http://hdl.handle.net/11590/316494 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |