We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.
Sorianello, V., De Angelis, G., DE IACOVO, A., Colace, L., Faralli, S., Romagnoli, M. (2015). Germanium gate junction-field-effect phototransistor integrated on SOI platform. In IET Conference Publications (pp.3 .-3 .). Institution of Engineering and Technology [10.1049/cp.2015.0127].
Germanium gate junction-field-effect phototransistor integrated on SOI platform
DE IACOVO, ANDREA;COLACE, Lorenzo;
2015-01-01
Abstract
We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.File in questo prodotto:
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