We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.
Sorianello, V., De Angelis, G., De Lacovo, A., Colace, L., Faralli, S., Romagnoli, M. (2015). Germanium gate phototransistor fabricated on SOI platform. In IEEE International Conference on Group IV Photonics GFP (pp.19-20). IEEE Computer Society [10.1109/Group4.2015.7305933].
Germanium gate phototransistor fabricated on SOI platform
COLACE, Lorenzo;
2015-01-01
Abstract
We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.File in questo prodotto:
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