Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350–600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 °C before the main part of Ge deposition. In the case of Ge deposited at 325 °C, approximately two times higher PL intensity is observed by P doping of ~3.2×1019 cm−3. Further increase of PL intensity by a factor of 1.5 is observed by increasing the growth temperature from 325 °C to 400 °C due to improved crystal quality. Varying PH3 partial pressure at 400 °C, red shift of the PL occurred with increasing P concentration due to higher bandgap narrowing. With increasing P concentration up to ~1.4×1019 cm−3 at 400 °C the PL peak intensity increases by filling electrons into the L valley and decreases due to enhanced point defect concentration and degraded crystallinity. By post-annealing at 500–800 °C, the PL intensity is further increased by a factor of 2.5 because of increased active P concentration and improved crystal quality. Reduced direct bandgap energy by introducing tensile strain is also observed.

Yamamoto, Y., Barget, M.R., Capellini, G., Taoka, N., Virgilio, M., Zaumseil, P., et al. (2017). Photoluminescence of phosphorous doped Ge on Si (100). MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 70, 111-116 [10.1016/j.mssp.2016.09.008].

Photoluminescence of phosphorous doped Ge on Si (100)

CAPELLINI, GIOVANNI;
2017-01-01

Abstract

Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350–600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 °C before the main part of Ge deposition. In the case of Ge deposited at 325 °C, approximately two times higher PL intensity is observed by P doping of ~3.2×1019 cm−3. Further increase of PL intensity by a factor of 1.5 is observed by increasing the growth temperature from 325 °C to 400 °C due to improved crystal quality. Varying PH3 partial pressure at 400 °C, red shift of the PL occurred with increasing P concentration due to higher bandgap narrowing. With increasing P concentration up to ~1.4×1019 cm−3 at 400 °C the PL peak intensity increases by filling electrons into the L valley and decreases due to enhanced point defect concentration and degraded crystallinity. By post-annealing at 500–800 °C, the PL intensity is further increased by a factor of 2.5 because of increased active P concentration and improved crystal quality. Reduced direct bandgap energy by introducing tensile strain is also observed.
2017
Yamamoto, Y., Barget, M.R., Capellini, G., Taoka, N., Virgilio, M., Zaumseil, P., et al. (2017). Photoluminescence of phosphorous doped Ge on Si (100). MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 70, 111-116 [10.1016/j.mssp.2016.09.008].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/323891
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