We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile, RFID tag and microconcentrator solar cell manufacturing. © 2007 IEEE.

Huang, K., Dinyari, R., Lanzara, G., Jong, Y.K., Feng, J., Vancura, C., et al. (2007). An approach to cost-effective, robust, large-area electronics using monolithic silicon. In Technical Digest - International Electron Devices Meeting, IEDM (pp.217-220) [10.1109/IEDM.2007.4418906].

An approach to cost-effective, robust, large-area electronics using monolithic silicon

Lanzara, Giulia;
2007-01-01

Abstract

We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile, RFID tag and microconcentrator solar cell manufacturing. © 2007 IEEE.
2007
978-1-4244-1507-6
Huang, K., Dinyari, R., Lanzara, G., Jong, Y.K., Feng, J., Vancura, C., et al. (2007). An approach to cost-effective, robust, large-area electronics using monolithic silicon. In Technical Digest - International Electron Devices Meeting, IEDM (pp.217-220) [10.1109/IEDM.2007.4418906].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/330478
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