The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si nano-structure approach with nano-pillars or bars separated by TEOS SiO2can be used successfully to deposit SiGe dots and lines free of misfit dislocations. It was found that strain relaxation in the pseudomorphically grown SiGe happens fully elastically. These studies are important for the understanding of the behavior of nano-structured Si for the final goal of Ge integration via SiGe buffer.
Zaumseil, P., Schubert, M.A., Yamamoto, Y., Skibitzki, O., Capellini, G., Schroeder, T. (2016). Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon, 242, 402-407 [10.4028/www.scientific.net/SSP.242.402].
Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon
Capellini, GiovanniConceptualization
;
2016-01-01
Abstract
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si nano-structure approach with nano-pillars or bars separated by TEOS SiO2can be used successfully to deposit SiGe dots and lines free of misfit dislocations. It was found that strain relaxation in the pseudomorphically grown SiGe happens fully elastically. These studies are important for the understanding of the behavior of nano-structured Si for the final goal of Ge integration via SiGe buffer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
