We report on the state of the art of near infrared photodetectors based on germanium on silicon. After a brief review on material and devices, we describe our approach to the fabrication of fast Ge/Si p-i-n detectors based on a simple process with reduced thermal budget for compatibility with standard silicon technology. The diodes, fabricated by chemical vapor deposition at 600°C, exhibit responsivities of 0.4 and 0.2A/W at 1.3μm and 1.55μm, respectively, and operation at 10Gbit/s. copyright The Electrochemical Society.

Colace, L., Masini, G., Assanto, G., Luan, H.C., Kimerling, L.C. (2006). Fast Ge-on-Si photodetectors for the near infrared. In ECS Transactions (pp.85-97) [10.1149/1.2355797].

Fast Ge-on-Si photodetectors for the near infrared

Colace, L.;Masini, G.;Assanto, G.;
2006-01-01

Abstract

We report on the state of the art of near infrared photodetectors based on germanium on silicon. After a brief review on material and devices, we describe our approach to the fabrication of fast Ge/Si p-i-n detectors based on a simple process with reduced thermal budget for compatibility with standard silicon technology. The diodes, fabricated by chemical vapor deposition at 600°C, exhibit responsivities of 0.4 and 0.2A/W at 1.3μm and 1.55μm, respectively, and operation at 10Gbit/s. copyright The Electrochemical Society.
Colace, L., Masini, G., Assanto, G., Luan, H.C., Kimerling, L.C. (2006). Fast Ge-on-Si photodetectors for the near infrared. In ECS Transactions (pp.85-97) [10.1149/1.2355797].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/331860
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