We report on the state of the art of near infrared photodetectors based on germanium on silicon. After a brief review on material and devices, we describe our approach to the fabrication of fast Ge/Si p-i-n detectors based on a simple process with reduced thermal budget for compatibility with standard silicon technology. The diodes, fabricated by chemical vapor deposition at 600°C, exhibit responsivities of 0.4 and 0.2A/W at 1.3μm and 1.55μm, respectively, and operation at 10Gbit/s. copyright The Electrochemical Society.
Colace, L., Masini, G., Assanto, G., Luan, H.C., & Kimerling, L.C. (2006). Fast Ge-on-Si photodetectors for the near infrared. In ECS Transactions (pp.85-97).
Titolo: | Fast Ge-on-Si photodetectors for the near infrared |
Autori: | |
Data di pubblicazione: | 2006 |
Rivista: | |
Citazione: | Colace, L., Masini, G., Assanto, G., Luan, H.C., & Kimerling, L.C. (2006). Fast Ge-on-Si photodetectors for the near infrared. In ECS Transactions (pp.85-97). |
Handle: | http://hdl.handle.net/11590/331860 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |