We show that the direct epitaxial growth of Ge on Si is a viable technology for the integration of near-infrared photodetectors on Si for Si microphotonics. This conclusion is based on a study of the electronic properties of threading-dislocations in p-n junction and an experimental demonstration of the performance of Ge p-i-n photodiode made from Ge grown directly on Si. At 1.3 μm, we measured a responsivity of 550 mA/W. With the addition of SiO2 anti-reflection coating, we measured a maximum external responsivity of 770 mA/W.
Luan, H., Giovane, L.M., Colace, L., Masini, G., Assanto, G., Chen, K.M., et al. (2001). Germanium photodetectors for silicon microphotonics. In Materials Research Society Symposium - Proceedings (pp.E561-E566).
Titolo: | Germanium photodetectors for silicon microphotonics | |
Autori: | ||
Data di pubblicazione: | 2001 | |
Rivista: | ||
Citazione: | Luan, H., Giovane, L.M., Colace, L., Masini, G., Assanto, G., Chen, K.M., et al. (2001). Germanium photodetectors for silicon microphotonics. In Materials Research Society Symposium - Proceedings (pp.E561-E566). | |
Handle: | http://hdl.handle.net/11590/331861 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |