We show that the direct epitaxial growth of Ge on Si is a viable technology for the integration of near-infrared photodetectors on Si for Si microphotonics. This conclusion is based on a study of the electronic properties of threading-dislocations in p-n junction and an experimental demonstration of the performance of Ge p-i-n photodiode made from Ge grown directly on Si. At 1.3 μm, we measured a responsivity of 550 mA/W. With the addition of SiO2 anti-reflection coating, we measured a maximum external responsivity of 770 mA/W.
Luan, H., Giovane, L.M., Colace, L., Masini, G., Assanto, G., Chen, K.M., et al. (2001). Germanium photodetectors for silicon microphotonics. In Materials Research Society Symposium - Proceedings (pp.E561-E566).
Germanium photodetectors for silicon microphotonics
Colace, Lorenzo;Masini, Gianlorenzo;Assanto, Gaetano;
2001-01-01
Abstract
We show that the direct epitaxial growth of Ge on Si is a viable technology for the integration of near-infrared photodetectors on Si for Si microphotonics. This conclusion is based on a study of the electronic properties of threading-dislocations in p-n junction and an experimental demonstration of the performance of Ge p-i-n photodiode made from Ge grown directly on Si. At 1.3 μm, we measured a responsivity of 550 mA/W. With the addition of SiO2 anti-reflection coating, we measured a maximum external responsivity of 770 mA/W.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
