Colloidal quantum dots are attracting a lot of interest for the fabrication of optoelectronics devices. In particular, they are suitable for simple, low cost and efficient photodetectors. Here we report on our recent results on lead sulphide colloidal quantum dot photoconductors operating in the near infrared spectral range. We describe the device fabrication process and provide an exhaustive electrical and optical characterization. The photodetectors exhibit a responsivity as high as 46 A/W and specific detectivity of about 1.7·1011 cmHz1/2W-1. Performance are investigated as a function of the voltage bias, device geometry and optical power. An evaluation of the device stability over time was also carried out.
Colace, L., De Iacovo, A., Venettacci, C., Bruno, S. (2019). Fabrication and characterization of lead sulphide colloidal quantum dot photodetectors for the near infrared. In PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology (pp.79-84). SciTePress.
Fabrication and characterization of lead sulphide colloidal quantum dot photodetectors for the near infrared
Colace L.;De Iacovo A.;Venettacci C.;Bruno S.
2019-01-01
Abstract
Colloidal quantum dots are attracting a lot of interest for the fabrication of optoelectronics devices. In particular, they are suitable for simple, low cost and efficient photodetectors. Here we report on our recent results on lead sulphide colloidal quantum dot photoconductors operating in the near infrared spectral range. We describe the device fabrication process and provide an exhaustive electrical and optical characterization. The photodetectors exhibit a responsivity as high as 46 A/W and specific detectivity of about 1.7·1011 cmHz1/2W-1. Performance are investigated as a function of the voltage bias, device geometry and optical power. An evaluation of the device stability over time was also carried out.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
