Number of electric vehicles (EVs) continues to expand rapidly. This leads to significantly increase the amount of charging stations with reduced charge time. This paper focuses on design and realization of the isolated Four-Port bidirectional Dual Active Bridge DC-DC Converter (4P-DAB) to be used in fast charging applications. Each port of the 4P-DAB can manage different sources and loads thanks to the full bridge converter. A magnetic node is created connecting all the ports through a high-frequency multi-winding transformer. The efficiency conversion as a function of the output power has been carried out using Silicon-Carbide (SiC) power semiconductors. Different control strategies have been applied to improve the performance of the converter. Simulation and optimization results are verified by realizing the switching model of 100 kVA 4P-DAB in MATLAB/Simulink.
Di Benedetto, M., Lidozzi, A., Solero, L., Crescimbini, F., Bifaretti, S. (2020). SiC-based four-port DAB converter for high power density fast charging station. In 2020 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2020 (pp.120-125). Institute of Electrical and Electronics Engineers Inc. [10.1109/SPEEDAM48782.2020.9161949].
SiC-based four-port DAB converter for high power density fast charging station
Di Benedetto M.;Lidozzi A.;Solero L.;Crescimbini F.;Bifaretti S.
2020-01-01
Abstract
Number of electric vehicles (EVs) continues to expand rapidly. This leads to significantly increase the amount of charging stations with reduced charge time. This paper focuses on design and realization of the isolated Four-Port bidirectional Dual Active Bridge DC-DC Converter (4P-DAB) to be used in fast charging applications. Each port of the 4P-DAB can manage different sources and loads thanks to the full bridge converter. A magnetic node is created connecting all the ports through a high-frequency multi-winding transformer. The efficiency conversion as a function of the output power has been carried out using Silicon-Carbide (SiC) power semiconductors. Different control strategies have been applied to improve the performance of the converter. Simulation and optimization results are verified by realizing the switching model of 100 kVA 4P-DAB in MATLAB/Simulink.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
