Infrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.
Talamas Simola, E., Kiyek, V., Ballabio, A., Schlykow, V., Frigerio, J., Zucchetti, C., et al. (2021). CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes. ACS PHOTONICS [10.1021/acsphotonics.1c00617].
CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes
Talamas Simola, EnricoInvestigation
;De Iacovo, AndreaWriting – Original Draft Preparation
;Colace, LorenzoWriting – Original Draft Preparation
;Capellini, GiovanniWriting – Original Draft Preparation
;Isella, Giovanni
2021-01-01
Abstract
Infrared (IR) multispectral detection is attracting increasing interest with the rising demand for high spectral sensitivity, room temperature operation, CMOS-compatible devices.Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis,demonstrated by identifying the wavelength of a monochromatic beam.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
