We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.

Ballabio, A., De Iacovo, A., Frigerio, J., Fabbri, A., Isella, G., & Colace, L. (2021). Ge/Si electrically tunable VIS/SWIR photodetector. In 2021 IEEE 17th International Conference on Group IV Photonics (GFP) [10.1109/GFP51802.2021.9673998].

Ge/Si electrically tunable VIS/SWIR photodetector

De Iacovo, Andrea;Fabbri, Andrea;Isella, Giovanni;Colace, Lorenzo
2021

Abstract

We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.
978-1-6654-2224-6
Ballabio, A., De Iacovo, A., Frigerio, J., Fabbri, A., Isella, G., & Colace, L. (2021). Ge/Si electrically tunable VIS/SWIR photodetector. In 2021 IEEE 17th International Conference on Group IV Photonics (GFP) [10.1109/GFP51802.2021.9673998].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/398301
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