Effects of Cs+ and Arn+ ion bombardment on the damage of graphite crystals

Intercalation mechanisms and diffusion or segregation phenomena in graphitic materials play a crucial role in different applied science fields. The investigation of such phenomena is usually accomplished through depth profiling experiments. Ar-GCIBs (Argon- Gas Cluster Ion Beams) are commonly adopted for in-depth concentration profiling of organic or soft materials; on the other hand, cesium ions are in general more suitable for the sputtering of inorganics. During such experiments, the beam-target interaction could alter chemistry and structure of the material. In this work, we define the optimal conditions in terms of both sputtering ion source and energy to preserve the crystal features. HOPG was used as a model system to compare morphological, physical, and chemical effects induced by different Arn+ clusters, and ultra-low energy Cs+ beam during ToF-SIMS (Time of Flight Secondary Ion Mass Spectrometry) depth profiling experiments. We demonstrated, through in-situ AFM (Atomic Force Microscopy) analysis, that the monoatomic Cs+ beam alters to a lower extent the HOPG structure. On the contrary, Ar-GCIBs strongly modify the graphite surface basal plane and underlying layers. However, HOPG crystals treated with the cesium monoatomic source undergo a chemistry modification leading to the formation of graphite oxide (GOx) together with the presence of hydrogen, and cesium adducts.