: Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

Seidel, L., Liu, T., Concepción, O., Marzban, B., Kiyek, V., Spirito, D., et al. (2024). Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors. NATURE COMMUNICATIONS, 15(1) [10.1038/s41467-024-54873-z].

Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Capellini, Giovanni
Writing – Original Draft Preparation
;
2024-01-01

Abstract

: Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
2024
Seidel, L., Liu, T., Concepción, O., Marzban, B., Kiyek, V., Spirito, D., et al. (2024). Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors. NATURE COMMUNICATIONS, 15(1) [10.1038/s41467-024-54873-z].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/493320
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact