Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e. the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.
Liu, T., Seidel, L., Concepción, O., Reboud, V., Chelnokov, A., Capellini, G., et al. (2025). Electrically Pumped GeSn Micro-Ring Lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 31(1: SiGeSn Infrared Photon.), 1-7 [10.1109/jstqe.2024.3489712].
Electrically Pumped GeSn Micro-Ring Lasers
Capellini, GiovanniWriting – Original Draft Preparation
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2025-01-01
Abstract
Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e. the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
