Gougam, S., Andreas Schubert, M., Capellini, G., Hartwig Zoellner, M. (2026). Delayed epitaxial breakdown in MBE-grown GeSn epitaxial layers by high deposition rate and temperatures. JOURNAL OF PHYSICS D. APPLIED PHYSICS [10.1088/1361-6463/ae83c5].

Delayed epitaxial breakdown in MBE-grown GeSn epitaxial layers by high deposition rate and temperatures

Giovanni Capellini
Writing – Original Draft Preparation
;
2026-01-01

2026
Gougam, S., Andreas Schubert, M., Capellini, G., Hartwig Zoellner, M. (2026). Delayed epitaxial breakdown in MBE-grown GeSn epitaxial layers by high deposition rate and temperatures. JOURNAL OF PHYSICS D. APPLIED PHYSICS [10.1088/1361-6463/ae83c5].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/550956
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