A Metal-Semiconductor-Metal (MSM) photodetector has been fabricated with Chemical Vapor Deposition (CVD) epitaxially grown Ge on silicon substrates. To limit and confine the dislocations induced by the large lattice mismatch, a thin Ge buffer layer deposited at low temperature has been introduced. The MSM detector has been obtained by lithographic definition of silver layer evaporated onto Ge.

Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., DI GASPARE, L., et al. (1998). METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI. In Proceedings of the Conference on Lasers and Electro-Optics Europe, 1998 (pp.134).

METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI

ASSANTO, GAETANO;CAPELLINI, GIOVANNI;
1998-01-01

Abstract

A Metal-Semiconductor-Metal (MSM) photodetector has been fabricated with Chemical Vapor Deposition (CVD) epitaxially grown Ge on silicon substrates. To limit and confine the dislocations induced by the large lattice mismatch, a thin Ge buffer layer deposited at low temperature has been introduced. The MSM detector has been obtained by lithographic definition of silver layer evaporated onto Ge.
1998
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., DI GASPARE, L., et al. (1998). METAL-SEMICONDUCTOR-METAL NEAR INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE ON SI. In Proceedings of the Conference on Lasers and Electro-Optics Europe, 1998 (pp.134).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/169914
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