We demonstrate monolithically integrated 4times10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.

Pinguet, T., Analui, B., Balmater, E., Guckenberger, D., Harrison, M., Koumans, R., et al. (2008). Monolithically Integrated High-Speed CMOS Photonic Transceivers. In 2008 5th IEEE International Conference on Group IV Photonics (pp.362-364). PISCATAWAY, NJ 08854 : IEEE Conference Publications Management Group [10.1109/GROUP4.2008.4638200].

Monolithically Integrated High-Speed CMOS Photonic Transceivers

CAPELLINI, GIOVANNI
2008-01-01

Abstract

We demonstrate monolithically integrated 4times10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.
2008
Pinguet, T., Analui, B., Balmater, E., Guckenberger, D., Harrison, M., Koumans, R., et al. (2008). Monolithically Integrated High-Speed CMOS Photonic Transceivers. In 2008 5th IEEE International Conference on Group IV Photonics (pp.362-364). PISCATAWAY, NJ 08854 : IEEE Conference Publications Management Group [10.1109/GROUP4.2008.4638200].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/171661
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