This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors with CMOS electronics for high speed optical transceivers. Insertion of the Germanium module into a CMOS process and its impact on the design of the detectors is discussed. The deployment of the devices in 4×10 Gbps receivers is also described, wherein an optical sensitivity of -19 dBm for a bit error rate of le-12 is demonstrated. The optimization of the trans impedance amplifier to take advantage of the reduced capacitance (<20fF) of the waveguide detectors is also discussed. ©The Electrochemical Society.
Masini, G., Sahni, S., Analui, B., Capellini, G., Witzens, J., Gunn, G. (2008). High-speed, monolithic CMOS receivers with Ge on Si waveguide photodelectors. In 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting (pp.601-608) [10.1149/1.2986818].
High-speed, monolithic CMOS receivers with Ge on Si waveguide photodelectors
CAPELLINI, GIOVANNI;
2008-01-01
Abstract
This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors with CMOS electronics for high speed optical transceivers. Insertion of the Germanium module into a CMOS process and its impact on the design of the detectors is discussed. The deployment of the devices in 4×10 Gbps receivers is also described, wherein an optical sensitivity of -19 dBm for a bit error rate of le-12 is demonstrated. The optimization of the trans impedance amplifier to take advantage of the reduced capacitance (<20fF) of the waveguide detectors is also discussed. ©The Electrochemical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
