Although rapid advances in Si photonics over the last decade has enabled mass production of higher functionality and lower cost photonic components (such as waveguides, couplers, modulators, photodetectors, etc..) integrated with both digital and analog circuitry in silicon complementary metal oxide semiconductor technology (Si-CMOS), an efficient electrically-pumped light emitter integrated in the Si-CMOS has so far been considered the Holy Grail of the monolithic electronics-photonics integration.

Capellini, G., Kozlowski, G., Yamamoto, Y., Lisker, M., Schroeder, T., Ghrib, A., et al. (2012). Tensile Strained Ge Layers Obtained via a Si-CMOS Compatible Approach. In International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 (pp.11-12) [10.1109/ISTDM.2012.6222428].

Tensile Strained Ge Layers Obtained via a Si-CMOS Compatible Approach

CAPELLINI, GIOVANNI;
2012-01-01

Abstract

Although rapid advances in Si photonics over the last decade has enabled mass production of higher functionality and lower cost photonic components (such as waveguides, couplers, modulators, photodetectors, etc..) integrated with both digital and analog circuitry in silicon complementary metal oxide semiconductor technology (Si-CMOS), an efficient electrically-pumped light emitter integrated in the Si-CMOS has so far been considered the Holy Grail of the monolithic electronics-photonics integration.
2012
Capellini, G., Kozlowski, G., Yamamoto, Y., Lisker, M., Schroeder, T., Ghrib, A., et al. (2012). Tensile Strained Ge Layers Obtained via a Si-CMOS Compatible Approach. In International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 (pp.11-12) [10.1109/ISTDM.2012.6222428].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/177763
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