We have investigated the weak antilocalization effect in a high-density two-dimensional electron gas (2DEG) in an AlGaN\\\/GaN heterostructure. The data were analyzed using the most representative theories on the weak antilocalization (WAL) correction to magnetoconductivity. The spin-orbit interaction (SOI) strength and the phase-coherence time were extracted from the fitting to the experimental data. We found that the use of the WAL peak analysis appears to be a reliable way of investigating the SOI strength and that the dependence on charge concentration revealed by the WAL data as reported in the literature can be considered a trustworthy experimental description of the SOI behavior in the AlGaN\\\/GaN 2DEG system.
D., S., DI GASPARE, L., Evangelisti, F., A., D.G., E., G., A., N. (2012). Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85, 235314 [10.1103/PhysRevB.85.235314].
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas
DI GASPARE, LUCIANA;EVANGELISTI, Florestano;
2012-01-01
Abstract
We have investigated the weak antilocalization effect in a high-density two-dimensional electron gas (2DEG) in an AlGaN\\\/GaN heterostructure. The data were analyzed using the most representative theories on the weak antilocalization (WAL) correction to magnetoconductivity. The spin-orbit interaction (SOI) strength and the phase-coherence time were extracted from the fitting to the experimental data. We found that the use of the WAL peak analysis appears to be a reliable way of investigating the SOI strength and that the dependence on charge concentration revealed by the WAL data as reported in the literature can be considered a trustworthy experimental description of the SOI behavior in the AlGaN\\\/GaN 2DEG system.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
