Asymmetric coupled quantum wells in the conduction band of germanium grown on silicon wafers have been investigated by THz pump-THz broadband probe picosecond spectroscopy. The optically-pumped laser gain coefficient is estimated.

Sabbagh, D., De Seta, M., Di Gaspare, L., Schmidt, J., Winnerl, S., Helm, M., et al. (2016). Germanium quantum fountain structures on silicon substrates. In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz (pp.1-2). IEEE Computer Society [10.1109/IRMMW-THz.2016.7758684].

Germanium quantum fountain structures on silicon substrates

SABBAGH, DIEGO;DE SETA, Monica;DI GASPARE, LUCIANA;
2016

Abstract

Asymmetric coupled quantum wells in the conduction band of germanium grown on silicon wafers have been investigated by THz pump-THz broadband probe picosecond spectroscopy. The optically-pumped laser gain coefficient is estimated.
9781467384858
Sabbagh, D., De Seta, M., Di Gaspare, L., Schmidt, J., Winnerl, S., Helm, M., et al. (2016). Germanium quantum fountain structures on silicon substrates. In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz (pp.1-2). IEEE Computer Society [10.1109/IRMMW-THz.2016.7758684].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/321261
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