We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
Von Den Driesch, N., Stange, D., Rainko, D., Zaumseil, P., Capellini, G., Hartmann, J., et al. (2017). Epitaxy of direct bandgap group IV heterostructure lasers. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.175-176). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082253].
Titolo: | Epitaxy of direct bandgap group IV heterostructure lasers | |
Autori: | ||
Data di pubblicazione: | 2017 | |
Citazione: | Von Den Driesch, N., Stange, D., Rainko, D., Zaumseil, P., Capellini, G., Hartmann, J., et al. (2017). Epitaxy of direct bandgap group IV heterostructure lasers. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.175-176). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082253]. | |
Handle: | http://hdl.handle.net/11590/330664 | |
ISBN: | 9781509065684 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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