We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.

Von Den Driesch, N., Stange, D., Rainko, D., Zaumseil, P., Capellini, G., Hartmann, J., et al. (2017). Epitaxy of direct bandgap group IV heterostructure lasers. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.175-176). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082253].

Epitaxy of direct bandgap group IV heterostructure lasers

Capellini, Giovanni;
2017-01-01

Abstract

We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
2017
9781509065684
Von Den Driesch, N., Stange, D., Rainko, D., Zaumseil, P., Capellini, G., Hartmann, J., et al. (2017). Epitaxy of direct bandgap group IV heterostructure lasers. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.175-176). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082253].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/330664
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact