We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.

Stange, D., Von Den Driesch, N., Zabel, T., Armand-Pilon, F., Marzban, B., Rainko, D., et al. (2017). Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.15-16). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082173].

Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures

Capellini, G.;
2017-01-01

Abstract

We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.
2017
9781509065684
Stange, D., Von Den Driesch, N., Zabel, T., Armand-Pilon, F., Marzban, B., Rainko, D., et al. (2017). Reduced threshold microdisk lasers from GeSn/SiGeSn heterostructures. In 14th International Conference on Group IV Photonics, GFP 2017 (pp.15-16). Institute of Electrical and Electronics Engineers Inc. [10.1109/GROUP4.2017.8082173].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/330666
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