A novel strategy towards the scalable realization of site controlled III-V quantum dots on Si substrates is presented. The nano-heteroepitaxy of InAs/GaAs nanostructures on Si(001) nano-tips was evaluated by structural and optical characterization.
Prieto, I., Kozak, R., Skibitzki, O., Martín-Sánchez, J., Fromherz, T., Rossell, M.D., et al. (2017). Site controlled InAs/GaAs nanostructures on Si nano-tips. In Optics InfoBase Conference Papers (pp.ITu2A.6). OSA - The Optical Society [10.1364/IPRSN.2017.ITu2A.6].
Site controlled InAs/GaAs nanostructures on Si nano-tips
Capellini, G.;
2017-01-01
Abstract
A novel strategy towards the scalable realization of site controlled III-V quantum dots on Si substrates is presented. The nano-heteroepitaxy of InAs/GaAs nanostructures on Si(001) nano-tips was evaluated by structural and optical characterization.File in questo prodotto:
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