We investigate the distribution of Sn in GeSn nano-heteroepitaxial clusters deposited at temperatures well exceeding the eutectic temperature of the GeSn system. The 600 °C molecular beam epitaxy on Si-patterned substrates results in the selective growth of GeSn nano-clusters having a 1.4 ± 0.5 at% Sn content. These nano-clusters feature Sn droplets on their faceted surfaces. The subsequent deposition of a thin Ge cap layer induced the incorporation of the Sn atoms segregated on the surface in a thin layer wetting the nano-dots surface with 8 ± 0.5 at% Sn. The presence of this wetting layer is associated with a relatively strong photoluminescence emission that we attribute to the direct recombination occurring in the GeSn nano-dots outer region.

Schlykow, V., Zaumseil, P., Schubert, M.A., Skibitzki, O., Yamamoto, Y., Klesse, W.M., et al. (2018). Photoluminescence from GeSn nano-heterostructures. NANOTECHNOLOGY, 29(41), 415702 [10.1088/1361-6528/aad626].

Photoluminescence from GeSn nano-heterostructures

Virgilio, Michele
Formal Analysis
;
De Seta, Monica
Formal Analysis
;
Di Gaspare, Luciana
Formal Analysis
;
Capellini, Giovanni
Writing – Original Draft Preparation
2018

Abstract

We investigate the distribution of Sn in GeSn nano-heteroepitaxial clusters deposited at temperatures well exceeding the eutectic temperature of the GeSn system. The 600 °C molecular beam epitaxy on Si-patterned substrates results in the selective growth of GeSn nano-clusters having a 1.4 ± 0.5 at% Sn content. These nano-clusters feature Sn droplets on their faceted surfaces. The subsequent deposition of a thin Ge cap layer induced the incorporation of the Sn atoms segregated on the surface in a thin layer wetting the nano-dots surface with 8 ± 0.5 at% Sn. The presence of this wetting layer is associated with a relatively strong photoluminescence emission that we attribute to the direct recombination occurring in the GeSn nano-dots outer region.
Schlykow, V., Zaumseil, P., Schubert, M.A., Skibitzki, O., Yamamoto, Y., Klesse, W.M., et al. (2018). Photoluminescence from GeSn nano-heterostructures. NANOTECHNOLOGY, 29(41), 415702 [10.1088/1361-6528/aad626].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/337803
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