""We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF(6) was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates. (C) 2010 Elsevier B.V. All rights reserved.""

A., N., R., B., E., G., V., F., S., C., M., P., et al. (2011). Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors. MICROELECTRONIC ENGINEERING, 88(8), 2714-2716 [10.1016/j.mee.2010.11.046].

Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

DI GASPARE, LUCIANA;CAPELLINI, GIOVANNI;EVANGELISTI, Florestano
2011-01-01

Abstract

""We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF(6) was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates. (C) 2010 Elsevier B.V. All rights reserved.""
A., N., R., B., E., G., V., F., S., C., M., P., et al. (2011). Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors. MICROELECTRONIC ENGINEERING, 88(8), 2714-2716 [10.1016/j.mee.2010.11.046].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/278840
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