The Quantum Cascade Laser (QCL) has been demonstrated in polar III-V semiconductor materials employing transitions between conduction band states [1]. Harnessing intersubband transitions allows lasing at mid-infrared and far-infrared wavelengths. Buried InGaAs/InAlAs QCLs unlocked the mid-infrared application space, because they are operational at room-temperature and in continuous wave [2]. However, THz QCLs remain limited up to 250 K in pulsed operation with a large dissipation [3]. The quenching of the laser emission is related to ther-mally activated LO phonon emission in polar materials. Exploiting intersubband transitions in non-polar group IV materials with weaker electron-phonon interaction is an exciting approach to realize a Si-based THz QCL and to eventually elevate the operation temperature [4].
Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). Terahertz intersubband electroluminescence from n-type germanium quantum wells. In 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021 (pp.1-1). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/CLEO/Europe-EQEC52157.2021.9541838].
Terahertz intersubband electroluminescence from n-type germanium quantum wells
Montanari M.;Ciano C.;Capellini G.;Di Gaspare L.;De Seta M.;
2021-01-01
Abstract
The Quantum Cascade Laser (QCL) has been demonstrated in polar III-V semiconductor materials employing transitions between conduction band states [1]. Harnessing intersubband transitions allows lasing at mid-infrared and far-infrared wavelengths. Buried InGaAs/InAlAs QCLs unlocked the mid-infrared application space, because they are operational at room-temperature and in continuous wave [2]. However, THz QCLs remain limited up to 250 K in pulsed operation with a large dissipation [3]. The quenching of the laser emission is related to ther-mally activated LO phonon emission in polar materials. Exploiting intersubband transitions in non-polar group IV materials with weaker electron-phonon interaction is an exciting approach to realize a Si-based THz QCL and to eventually elevate the operation temperature [4].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
