We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.

Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). THz Intersubband Emitter based on Silicon. In Conference Digest - IEEE International Semiconductor Laser Conference (pp.1-1). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISLC51662.2021.9615725].

THz Intersubband Emitter based on Silicon

Persichetti L.;Montanari M.;Virgilio M.;Ciano C.;Ortolani M.;Capellini G.;Di Gaspare L.;De Seta M.;
2021

Abstract

We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.
978-1-6654-4133-9
Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., et al. (2021). THz Intersubband Emitter based on Silicon. In Conference Digest - IEEE International Semiconductor Laser Conference (pp.1-1). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISLC51662.2021.9615725].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/397579
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