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DE SETA, Monica

DE SETA, Monica  

Dipartimento di Scienze  

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Risultati 1 - 20 di 139 (tempo di esecuzione: 0.049 secondi).
Titolo Data di pubblicazione Autore(i) File
2DEG based on strained Si on SGOI substrate 1-gen-2008 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, G; Pea, M; Ciasca, G; Evangelisti, F.
2DEG based on strained Si on SGOI substrate 1-gen-2008 Di Gaspare, L.; Notargiacomo, A.; Giovine, E.; DE SETA, Monica; Capellini, G.; Pea, M.; Ciasca, G.; Evangelisti, F.
2DEG based on strained Si on SGOI substrate 1-gen-2008 DI GASPARE, Luciana; Notargiacomo, A; Giovine, E; DE SETA, Monica; Capellini, Giovanni; Pea, M; Ciasca, G; Evangelisti, F.
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 1-gen-2019 Di Gaspare, Luciana; Persichetti, Luca; Sgarlata, Anna; Fanfoni, Massimo; Notargiacomo, Andrea; Scaparro, Andrea Maria; Miseikis, Vaidotas; Fabbri, Filippo; Coletti, Camilla; De Seta, Monica
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 1-gen-2019 Persichetti, Luca; Di Gaspare, L.; Fabbri, F.; Scaparro, ANDREA MARIA; Notargiacomo, A.; Sgarlata, A.; Fanfoni, M.; Miseikis, V.; Coletti, C.; De Seta, M.
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 1-gen-2009 Capellini, G.; Ciasca, G.; DE SETA, Monica; Notargiacomo, A.; Evangelisti, F.; Nardone, M.
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 1-gen-2008 DE SETA, Monica; Capellini, Giovanni; Evangelisti, F.
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 1-gen-2008 DE SETA, Monica; Capellini, G.; Evangelisti, F.
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 1-gen-2024 Talamas Simola, E.; Ortolani, M.; Di Gaspare, L.; Capellini, G.; De Seta, M.; Virgilio, M.
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 1-gen-2020 Grange, T.; Mukherjee, S.; Capellini, G.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Birner, S.; Attiaoui, A.; Moutanabbir, O.; Virgilio, M.; De Seta, M.
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 1-gen-1993 DE SETA, Monica; Wang, Sl; Fumi, F; Evangelisti, F.
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 1-gen-2014 Virgilio, M; Ortolani, M; Teich, M; Winnerl, S; Helm, M; Sabbagh, D; Capellini, Giovanni; DE SETA, Monica
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 1-gen-2014 Virgilio, M; Ortolani, M; Teich, M; Winner, S; Helm, M; Sabbagh, D; Capellini, G; DE SETA, Monica
Commensurability and stability in nonperiodic systems 1-gen-2005 Fasano, Y; DE SETA, Monica; Menghini, M; Pastoriza, H; de la Cruz, F.
Conduction band intersubband transitions in Ge/SiGe quantum wells 1-gen-2009 DE SETA, Monica; Capellini, G.; Busby, Y.; Evangelisti, F.; Ortolani, M.; Virgilio, M.; Grosso, G.; Pizzi, G.; Nucara, A.; Lupi, S.
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 1-gen-2019 Ciano, Chiara; Virgilio, M.; Montanari, M.; Persichetti, L.; Di Gaspare, L.; Ortolani, M.; Baldassarre, L.; Zoellner, M. H.; Skibitzki, O.; Scalari, G.; Faist, J.; Paul, D. J.; Scuderi, M.; Nicotra, G.; Grange, T.; Birner, S.; Capellini, G.; De Seta, M.
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 1-gen-2020 Becker, L.; Storck, P.; Schulz, T.; Zoellner, M. H.; Di Gaspare, L.; Rovaris, F.; Marzegalli, A.; Montalenti, F.; De Seta, M.; Capellini, G.; Schwalb, G.; Schroeder, T.; Albrecht, M.
Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) 1-gen-2021 Tetzner, H.; Fischer, I. A.; Skibitzki, O.; Mirza, M. M.; Manganelli, C. L.; Luongo, G.; Spirito, D.; Paul, D. J.; De Seta, M.; Capellini, G.
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 1-gen-2020 Gallacher, K.; Ortolani, M.; Rew, K.; Ciano, C.; Baldassarre, L.; Virgilio, M.; Scalari, G.; Faist, J.; Di Gaspare, L.; De Seta, M.; Capellini, G.; Grange, T.; Birner, S.; Paul, D. J.
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 1-gen-2014 Calandrini, E; Ortolani, M; Nucara, A; Scappucci, G; Klesse, Wm; Simmons, My; DI GASPARE, Luciana; DE SETA, Monica; Sabbagh, D; Capellini, G; Virgilio, M; Baldassarre, L.