Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 10.245
EU - Europa 6.142
AS - Asia 4.620
SA - Sud America 340
AF - Africa 37
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 6
Totale 21.401
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Nazione #
US - Stati Uniti d'America 10.194
CN - Cina 2.673
GB - Regno Unito 2.027
RU - Federazione Russa 1.249
SG - Singapore 1.192
UA - Ucraina 641
DE - Germania 522
SE - Svezia 493
DK - Danimarca 475
BR - Brasile 281
VN - Vietnam 255
HK - Hong Kong 220
FI - Finlandia 171
IT - Italia 160
IE - Irlanda 151
AL - Albania 150
TR - Turchia 120
KR - Corea 46
IN - India 35
NL - Olanda 29
AR - Argentina 27
MX - Messico 22
CA - Canada 20
BD - Bangladesh 17
FR - Francia 15
ZA - Sudafrica 15
BE - Belgio 13
IQ - Iraq 13
PL - Polonia 12
JP - Giappone 11
AU - Australia 9
EC - Ecuador 9
ES - Italia 9
AZ - Azerbaigian 7
UZ - Uzbekistan 7
CO - Colombia 6
ID - Indonesia 6
RO - Romania 5
EG - Egitto 4
EU - Europa 4
MA - Marocco 4
SA - Arabia Saudita 4
UY - Uruguay 4
VE - Venezuela 4
DZ - Algeria 3
KE - Kenya 3
LT - Lituania 3
PE - Perù 3
PY - Paraguay 3
TN - Tunisia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AT - Austria 2
CL - Cile 2
HN - Honduras 2
NP - Nepal 2
PT - Portogallo 2
TT - Trinidad e Tobago 2
AE - Emirati Arabi Uniti 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BG - Bulgaria 1
BJ - Benin 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
IL - Israele 1
IM - Isola di Man 1
IR - Iran 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
ME - Montenegro 1
MK - Macedonia 1
MT - Malta 1
NO - Norvegia 1
PA - Panama 1
PH - Filippine 1
PS - Palestinian Territory 1
RS - Serbia 1
SN - Senegal 1
TH - Thailandia 1
TO - Tonga 1
TW - Taiwan 1
WS - Samoa 1
Totale 21.401
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 812
Houston 694
Seattle 647
Wilmington 614
Chandler 588
Nanjing 563
Cambridge 517
Singapore 470
Jacksonville 428
Ann Arbor 392
Dearborn 348
Boardman 330
Hefei 290
Princeton 290
Beijing 266
Hong Kong 220
Shenyang 202
Nanchang 176
Dallas 171
Dublin 151
Dong Ket 146
Tianjin 134
Izmir 117
Hebei 110
Changsha 102
Jiaxing 95
Redwood City 93
Jinan 79
San Diego 75
New York 69
Moscow 63
Zhengzhou 56
Kunming 54
Plano 49
Ho Chi Minh City 48
Guangzhou 46
Seoul 46
Hangzhou 45
Orange 45
Altamura 41
The Dalles 38
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Flushing 25
Los Angeles 24
Bari 22
Hanoi 22
Lanzhou 22
Haikou 19
Shanghai 18
Chicago 17
São Paulo 17
San Paolo di Civitate 16
Fuzhou 14
Milan 14
Norwalk 14
Brussels 13
Santa Clara 13
Fort Worth 12
London 12
Munich 12
San Francisco 12
Turku 12
Yubileyny 12
Boston 11
Mumbai 11
Rio de Janeiro 11
San Mateo 11
Verona 11
Helsinki 10
Tokyo 10
Walnut 10
Warsaw 10
Taiyuan 9
Johannesburg 8
Baghdad 7
Baku 7
Changchun 7
Phoenix 7
Pune 7
Rome 7
Alameda 6
Brooklyn 6
Chennai 6
Columbus 6
Curitiba 6
Da Nang 6
Mexico City 6
Mountain View 6
Saint Petersburg 6
Stevenage 6
Tashkent 6
Toronto 6
Auburn Hills 5
Totale 15.313
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Nome #
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 230
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 218
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 217
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 214
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 213
Active electric near field imaging of electronic devices 205
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 203
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 201
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 199
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 199
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 198
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 197
A single electron transistor based on Si/SiGe wires 194
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 193
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 192
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 192
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 192
Metal-Ge-Si heterostructures for near infrared light detection 185
Conduction-band intersubband transitions in Ge/SiGe quantum wells 183
2DEG based on strained Si on SGOI substrate 180
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 179
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 179
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 179
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 178
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 178
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 178
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 178
Ordered growth of Ge island clusters on strain-engineered Si surfaces 177
INFRARED-ANALYSIS OF A-GE1-XNX-H 176
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 175
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 175
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 175
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 175
Enhanced core excitons in amorphous semiconductors 171
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 171
Conductance quantization in etched Si/SiGe quantum point contacts 171
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 170
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 170
Quantum transport in low-dimensional AlGaN/GaN systems 167
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 167
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 166
Electric-field-induced interference effects at the ground exciton level in GaAs 163
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 163
Characterization and luminescence of a-Si:H:Cl films 163
Ge/Si (001) photodetector for near infrared light 163
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 163
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 161
Atomic force microscopy litography as a nanodevice development 159
Field-induced tunneling in SiGe wires 158
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 158
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 157
SiGe intermixing in Ge/Si(100) islands 156
EXAFS investigation of amorphous-to-crystal transition in Ge 156
Terahertz electrodynamics in high electron-mobility transistors 156
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 156
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 155
Influence of the growth parameters on self-assembled Ge islands on Si (100) 155
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 154
Doped silicon and NIS junctions for bolometer applications 154
Investigation of SiGe-heterostructure nanowires 153
SiC formation on Si(100) via C60 precursors 153
Structure of vapor-deposited Ge films as a function of substrate temperature 152
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 152
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 151
Electronic states of thin epitaxial layers of Ge on Si (100) 151
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 150
Spontaneous ordering of self-assembled Ge island 150
Low field magnetotransport in strained Si/SiGe cavities 150
Intermixing-promoted scaling of Ge/Si(100) island sizes 146
Two-phonon resonant Brillouin scattering in CdS 146
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 146
Ge/Si(100) islands: growth dynamics versus growth rate 146
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 146
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 145
Experimental reflectivity spectra and additional boundary conditions in CdS 144
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 143
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 143
Study of bonding configurations in amorphous GexSi1-x:H alloys 143
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 142
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 141
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 141
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 140
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 140
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 139
Spontaneous ordering of self-assembled-Ge island 139
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 139
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 137
CONDUCTIVITY AND PHOTOCONDUCTIVITY OF N-DOPED HYDROGENATED AMORPHOUS-SILICON TREATED WITH A CO2-LASER 137
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 137
Plasma-assisted chemical vapor deposition growth of SiC on Si (100): Morphology and electronic structure 136
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 136
Defects in SiGe virtual substrates for high mobility electron gas 135
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 135
Low field magnetotransport in strained Si-cavities 133
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 132
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 131
Growth of thin C60 films on hydrogenated Si (100) surfaces 131
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 131
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 130
Dependence of exciton reflectance on field and other surface characteristics: The case of InP 128
Totale 16.310
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Categoria #
all - tutte 65.665
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.665
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.604 0 0 0 0 0 190 475 301 87 220 76 255
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/20252.418 30 67 311 3 14 96 808 384 263 121 160 161
2025/20262.268 382 558 256 499 408 165 0 0 0 0 0 0
Totale 21.597