Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 11.935
EU - Europa 6.265
AS - Asia 5.724
SA - Sud America 510
Continente sconosciuto - Info sul continente non disponibili 203
AF - Africa 82
OC - Oceania 12
Totale 24.731
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Nazione #
US - Stati Uniti d'America 11.824
CN - Cina 2.764
GB - Regno Unito 2.041
SG - Singapore 1.704
RU - Federazione Russa 1.255
UA - Ucraina 643
DE - Germania 529
VN - Vietnam 495
SE - Svezia 493
DK - Danimarca 476
BR - Brasile 372
HK - Hong Kong 252
IT - Italia 202
FI - Finlandia 185
AL - Albania 153
IE - Irlanda 152
TR - Turchia 142
IN - India 82
KR - Corea 49
BD - Bangladesh 48
CA - Canada 45
AR - Argentina 44
IQ - Iraq 32
CO - Colombia 30
NL - Olanda 30
MX - Messico 29
FR - Francia 27
EC - Ecuador 23
ZA - Sudafrica 20
VE - Venezuela 18
SA - Arabia Saudita 17
UZ - Uzbekistan 17
PH - Filippine 16
BE - Belgio 15
PL - Polonia 15
ES - Italia 14
JP - Giappone 14
MA - Marocco 14
ID - Indonesia 13
MY - Malesia 13
PK - Pakistan 11
AU - Australia 10
AZ - Azerbaigian 9
TN - Tunisia 9
CR - Costa Rica 8
EG - Egitto 7
TH - Thailandia 7
ET - Etiopia 6
KE - Kenya 6
NP - Nepal 6
UY - Uruguay 6
DZ - Algeria 5
LB - Libano 5
PY - Paraguay 5
RO - Romania 5
CL - Cile 4
EU - Europa 4
JM - Giamaica 4
JO - Giordania 4
NI - Nicaragua 4
OM - Oman 4
PE - Perù 4
PT - Portogallo 4
SV - El Salvador 4
TT - Trinidad e Tobago 4
BA - Bosnia-Erzegovina 3
BO - Bolivia 3
GE - Georgia 3
HN - Honduras 3
LT - Lituania 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
AT - Austria 2
BB - Barbados 2
BG - Bulgaria 2
BH - Bahrain 2
BW - Botswana 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
IL - Israele 2
LY - Libia 2
NO - Norvegia 2
RS - Serbia 2
SY - Repubblica araba siriana 2
AE - Emirati Arabi Uniti 1
AG - Antigua e Barbuda 1
AM - Armenia 1
BF - Burkina Faso 1
BJ - Benin 1
BY - Bielorussia 1
CW - ???statistics.table.value.countryCode.CW??? 1
EE - Estonia 1
GH - Ghana 1
GY - Guiana 1
HU - Ungheria 1
IM - Isola di Man 1
IR - Iran 1
Totale 24.515
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 1.148
Houston 696
Singapore 690
Seattle 650
Wilmington 615
Chandler 588
Nanjing 563
San Jose 522
Cambridge 518
Jacksonville 430
Ann Arbor 392
Dearborn 348
Boardman 330
Princeton 291
Hefei 290
Beijing 266
Hong Kong 241
Shenyang 202
Dallas 182
Nanchang 176
Dublin 152
Dong Ket 146
Tianjin 134
Ho Chi Minh City 127
Council Bluffs 118
Izmir 118
Hebei 110
Changsha 102
Jiaxing 95
Redwood City 93
New York 87
Hanoi 80
Jinan 79
San Diego 77
Moscow 64
Zhengzhou 56
Kunming 54
São Paulo 53
Plano 49
Guangzhou 47
Seoul 46
Hangzhou 45
Orange 45
Los Angeles 44
Altamura 41
Santa Clara 40
The Dalles 38
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Chicago 27
Flushing 25
Helsinki 24
Bari 22
Lanzhou 22
Milan 21
Toronto 21
San Francisco 20
Haikou 19
Shanghai 18
Phoenix 17
San Paolo di Civitate 16
Tashkent 16
Da Nang 15
Norwalk 15
Fort Worth 14
Fuzhou 14
Atlanta 13
Baghdad 13
Brussels 13
Warsaw 13
London 12
Mumbai 12
Munich 12
Rome 12
Turku 12
Yubileyny 12
Bogotá 11
Boston 11
Caracas 11
Quito 11
Rio de Janeiro 11
San Mateo 11
Tokyo 11
Verona 11
Brooklyn 10
Haiphong 10
Walnut 10
Baku 9
Chennai 9
Medellín 9
Orem 9
Taiyuan 9
Curitiba 8
Johannesburg 8
Totale 16.927
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Nome #
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 249
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 249
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 248
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 239
Conduction-band intersubband transitions in Ge/SiGe quantum wells 237
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 229
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 228
Active electric near field imaging of electronic devices 228
Atomic force microscopy litography as a nanodevice development 228
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 224
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 222
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 219
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 219
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 218
A single electron transistor based on Si/SiGe wires 215
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 214
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 213
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 213
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 212
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 212
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 211
Ordered growth of Ge island clusters on strain-engineered Si surfaces 206
2DEG based on strained Si on SGOI substrate 206
Metal-Ge-Si heterostructures for near infrared light detection 205
INFRARED-ANALYSIS OF A-GE1-XNX-H 202
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 200
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 200
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 199
EXAFS investigation of amorphous-to-crystal transition in Ge 199
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 198
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 198
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 197
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 197
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 197
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 195
Enhanced core excitons in amorphous semiconductors 195
Conductance quantization in etched Si/SiGe quantum point contacts 191
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 190
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 189
Characterization and luminescence of a-Si:H:Cl films 189
Quantum transport in low-dimensional AlGaN/GaN systems 189
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 188
Electric-field-induced interference effects at the ground exciton level in GaAs 185
Ge/Si (001) photodetector for near infrared light 183
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 182
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 181
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 181
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 180
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 178
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 178
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 178
SiGe intermixing in Ge/Si(100) islands 177
Terahertz electrodynamics in high electron-mobility transistors 177
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 175
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 175
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 174
Structure of vapor-deposited Ge films as a function of substrate temperature 174
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 174
Field-induced tunneling in SiGe wires 173
Influence of the growth parameters on self-assembled Ge islands on Si (100) 173
Intermixing-promoted scaling of Ge/Si(100) island sizes 173
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 173
Investigation of SiGe-heterostructure nanowires 171
Two-phonon resonant Brillouin scattering in CdS 171
Ge/Si(100) islands: growth dynamics versus growth rate 171
Electronic states of thin epitaxial layers of Ge on Si (100) 170
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 170
SiC formation on Si(100) via C60 precursors 169
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 169
Spontaneous ordering of self-assembled Ge island 169
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 169
Study of bonding configurations in amorphous GexSi1-x:H alloys 168
Low field magnetotransport in strained Si/SiGe cavities 168
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 167
Doped silicon and NIS junctions for bolometer applications 167
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 165
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 164
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 163
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 162
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 162
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 160
Experimental reflectivity spectra and additional boundary conditions in CdS 160
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 159
Growth of thin C60 films on hydrogenated Si (100) surfaces 157
Spontaneous ordering of self-assembled-Ge island 156
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 155
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 154
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 154
Low field magnetotransport in strained Si-cavities 154
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 154
Self-ordering of Ge islands on Si(001) by means of Si overgrowth 153
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 153
Plasma-assisted chemical vapor deposition growth of SiC on Si (100): Morphology and electronic structure 153
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 153
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 152
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 151
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 150
CONDUCTIVITY AND PHOTOCONDUCTIVITY OF N-DOPED HYDROGENATED AMORPHOUS-SILICON TREATED WITH A CO2-LASER 150
Gap states in a-Si:H by photoconductivity and absorption 148
Strain relaxation in high Ge content SiGe layers deposited on Si 148
Totale 18.490
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Categoria #
all - tutte 77.542
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 77.542
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.021 0 0 0 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/20252.418 30 67 311 3 14 96 808 384 263 121 160 161
2025/20264.136 382 558 256 499 408 359 507 106 306 569 121 65
2026/20271.266 67 75 592 532 0 0 0 0 0 0 0 0
Totale 24.731