Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 9.644
EU - Europa 5.050
AS - Asia 2.525
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 2
AF - Africa 1
Totale 17.236
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Nazione #
US - Stati Uniti d'America 9.637
CN - Cina 2.062
GB - Regno Unito 2.012
UA - Ucraina 637
DE - Germania 506
SE - Svezia 490
DK - Danimarca 475
RU - Federazione Russa 257
SG - Singapore 171
FI - Finlandia 156
IT - Italia 151
IE - Irlanda 150
AL - Albania 149
VN - Vietnam 146
TR - Turchia 117
NL - Olanda 25
FR - Francia 14
BE - Belgio 13
JP - Giappone 10
AU - Australia 8
IN - India 8
CA - Canada 7
RO - Romania 5
EU - Europa 4
HK - Hong Kong 3
IQ - Iraq 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BR - Brasile 2
ES - Italia 2
AT - Austria 1
BD - Bangladesh 1
CZ - Repubblica Ceca 1
EG - Egitto 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
LU - Lussemburgo 1
NO - Norvegia 1
PL - Polonia 1
PT - Portogallo 1
TW - Taiwan 1
Totale 17.236
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 701
Houston 693
Seattle 644
Wilmington 614
Chandler 588
Nanjing 562
Cambridge 517
Jacksonville 427
Ann Arbor 392
Dearborn 348
Boardman 330
Princeton 290
Shenyang 200
Nanchang 175
Beijing 166
Dublin 150
Dong Ket 146
Tianjin 125
Izmir 117
Singapore 112
Hebei 110
Changsha 98
Jiaxing 95
Redwood City 93
Jinan 77
San Diego 75
New York 57
Kunming 50
Plano 49
Zhengzhou 49
Moscow 46
Orange 45
Hangzhou 44
Altamura 41
Guangzhou 34
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Flushing 25
Hefei 24
Bari 22
Lanzhou 20
Haikou 19
San Paolo di Civitate 16
Shanghai 15
Fuzhou 14
Norwalk 14
Brussels 13
Fort Worth 12
Milan 12
London 11
San Mateo 11
Verona 11
Walnut 10
Dallas 9
Tokyo 9
Taiyuan 8
Changchun 7
Helsinki 7
Los Angeles 7
Pune 7
Alameda 6
Mountain View 6
Rome 6
Saint Petersburg 6
Stevenage 6
Auburn Hills 5
Kilburn 4
Lawrence 4
Qingdao 4
Washington 4
Westminster 4
Chengdu 3
Chiswick 3
Eugene 3
Hong Kong 3
Hounslow 3
Morgan Hill 3
New Bedfont 3
North York 3
Wandsworth 3
Andover 2
Baghdad 2
Chicago 2
Columbus 2
Indiana 2
Laurel 2
Madrid 2
Muenster 2
Nürnberg 2
Shaoxing 2
Toronto 2
Amsterdam 1
Atlanta 1
Augusta 1
Totale 13.690
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Nome #
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 183
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 179
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 177
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 172
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 171
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 170
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 169
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 164
Conduction-band intersubband transitions in Ge/SiGe quantum wells 161
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 160
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 157
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 156
Metal-Ge-Si heterostructures for near infrared light detection 155
Active electric near field imaging of electronic devices 153
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 153
INFRARED-ANALYSIS OF A-GE1-XNX-H 152
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 151
Ordered growth of Ge island clusters on strain-engineered Si surfaces 150
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 149
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 147
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 147
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 147
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 147
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 145
Quantum transport in low-dimensional AlGaN/GaN systems 143
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 143
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 142
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 142
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 142
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 141
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 141
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 139
Enhanced core excitons in amorphous semiconductors 138
Ge/Si (001) photodetector for near infrared light 138
2DEG based on strained Si on SGOI substrate 138
A single electron transistor based on Si/SiGe wires 137
Terahertz electrodynamics in high electron-mobility transistors 137
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 136
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 136
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 135
Field-induced tunneling in SiGe wires 134
Electric-field-induced interference effects at the ground exciton level in GaAs 134
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 134
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 133
Doped silicon and NIS junctions for bolometer applications 133
EXAFS investigation of amorphous-to-crystal transition in Ge 132
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 132
SiGe intermixing in Ge/Si(100) islands 131
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 130
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 129
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 129
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 129
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 128
Experimental reflectivity spectra and additional boundary conditions in CdS 127
SiC formation on Si(100) via C60 precursors 126
Spontaneous ordering of self-assembled Ge island 126
Conductance quantization in etched Si/SiGe quantum point contacts 126
Structure of vapor-deposited Ge films as a function of substrate temperature 125
Low field magnetotransport in strained Si/SiGe cavities 125
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 125
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 124
Influence of the growth parameters on self-assembled Ge islands on Si (100) 123
Study of bonding configurations in amorphous GexSi1-x:H alloys 123
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 121
Intermixing-promoted scaling of Ge/Si(100) island sizes 121
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 121
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 120
Two-phonon resonant Brillouin scattering in CdS 120
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 119
Ge/Si(100) islands: growth dynamics versus growth rate 119
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 119
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 118
Electronic states of thin epitaxial layers of Ge on Si (100) 117
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 117
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 117
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 116
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 116
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 116
Characterization and luminescence of a-Si:H:Cl films 115
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 115
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 115
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 114
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 114
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 114
Investigation of SiGe-heterostructure nanowires 113
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 113
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 112
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 112
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 111
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 110
Defects in SiGe virtual substrates for high mobility electron gas 110
Atomic force microscopy litography as a nanodevice development 109
Growth of thin C60 films on hydrogenated Si (100) surfaces 107
Spontaneous ordering of self-assembled-Ge island 107
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 106
Gap states in a-Si:H by photoconductivity and absorption 106
POSITION-SENSITIVE PHOTODETECTOR BASED ON HYDROGENATED AMORPHOUS-SILICON P-I-N JUNCTIONS 106
Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high mobility two-dimensional electron gases 105
Split-off exciton and phonon-dependent lineshape at the optical edge of silicon 105
Single Electron Transistor based on modulation-doped SiGe heterostructures 104
Totale 13.201
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Categoria #
all - tutte 49.088
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.088
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.572 0 0 0 0 0 460 524 452 696 161 203 76
2020/20212.539 181 120 223 139 272 190 475 301 87 220 76 255
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/2025521 30 67 311 3 14 96 0 0 0 0 0 0
Totale 17.432