Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 9.703
EU - Europa 6.050
AS - Asia 2.971
SA - Sud America 75
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 5
Totale 18.818
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Nazione #
US - Stati Uniti d'America 9.695
CN - Cina 2.062
GB - Regno Unito 2.012
RU - Federazione Russa 1.239
UA - Ucraina 639
DE - Germania 510
SE - Svezia 490
DK - Danimarca 475
SG - Singapore 394
HK - Hong Kong 210
FI - Finlandia 159
IT - Italia 155
IE - Irlanda 151
AL - Albania 149
VN - Vietnam 146
TR - Turchia 117
BR - Brasile 68
NL - Olanda 27
FR - Francia 14
BE - Belgio 13
JP - Giappone 10
IN - India 9
AU - Australia 8
CA - Canada 7
IQ - Iraq 7
RO - Romania 5
AZ - Azerbaigian 4
EU - Europa 4
CO - Colombia 3
ES - Italia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BD - Bangladesh 2
EG - Egitto 2
KE - Kenya 2
VE - Venezuela 2
AR - Argentina 1
AT - Austria 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
HN - Honduras 1
ID - Indonesia 1
IM - Isola di Man 1
IR - Iran 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LT - Lituania 1
LU - Lussemburgo 1
LV - Lettonia 1
NO - Norvegia 1
NP - Nepal 1
PH - Filippine 1
PL - Polonia 1
PT - Portogallo 1
PY - Paraguay 1
SA - Arabia Saudita 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 18.818
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 701
Houston 693
Seattle 644
Wilmington 614
Chandler 588
Nanjing 562
Cambridge 517
Jacksonville 427
Ann Arbor 392
Dearborn 348
Boardman 330
Princeton 290
Hong Kong 210
Shenyang 200
Nanchang 175
Beijing 166
Dublin 151
Dong Ket 146
Tianjin 125
Izmir 117
Singapore 112
Hebei 110
Changsha 98
Jiaxing 95
Redwood City 93
Jinan 77
San Diego 75
Moscow 62
New York 58
Kunming 50
Plano 49
Zhengzhou 49
Orange 45
Hangzhou 44
Altamura 41
The Dalles 35
Guangzhou 34
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Flushing 25
Hefei 24
Bari 22
Lanzhou 20
Haikou 19
San Paolo di Civitate 16
Shanghai 15
Fuzhou 14
Norwalk 14
Brussels 13
Milan 13
Fort Worth 12
Yubileyny 12
London 11
San Mateo 11
Verona 11
Walnut 10
Dallas 9
Los Angeles 9
Tokyo 9
Helsinki 8
Taiyuan 8
Changchun 7
Pune 7
Rome 7
Alameda 6
Mountain View 6
Saint Petersburg 6
Stevenage 6
Auburn Hills 5
Baku 4
Kilburn 4
Lawrence 4
Qingdao 4
Rio de Janeiro 4
Washington 4
Westminster 4
Baghdad 3
Campinas 3
Chengdu 3
Chiswick 3
Eugene 3
Hounslow 3
Morgan Hill 3
New Bedfont 3
North York 3
São Paulo 3
Wandsworth 3
Amsterdam 2
Andover 2
Bogotá 2
Campos dos Goytacazes 2
Caracas 2
Chicago 2
Columbus 2
Totale 13.973
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Nome #
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 198
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 194
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 193
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 183
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 182
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 181
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 181
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 179
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 177
Active electric near field imaging of electronic devices 174
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 174
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 172
Conduction-band intersubband transitions in Ge/SiGe quantum wells 168
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 165
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 165
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 164
Metal-Ge-Si heterostructures for near infrared light detection 164
A single electron transistor based on Si/SiGe wires 162
INFRARED-ANALYSIS OF A-GE1-XNX-H 162
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 162
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 162
Ordered growth of Ge island clusters on strain-engineered Si surfaces 161
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 159
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 157
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 156
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 156
2DEG based on strained Si on SGOI substrate 156
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 156
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 156
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 152
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 152
Quantum transport in low-dimensional AlGaN/GaN systems 152
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 152
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 151
Conductance quantization in etched Si/SiGe quantum point contacts 151
Enhanced core excitons in amorphous semiconductors 149
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 149
Electric-field-induced interference effects at the ground exciton level in GaAs 148
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 148
Ge/Si (001) photodetector for near infrared light 147
Terahertz electrodynamics in high electron-mobility transistors 147
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 147
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 146
Field-induced tunneling in SiGe wires 145
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 145
EXAFS investigation of amorphous-to-crystal transition in Ge 145
Doped silicon and NIS junctions for bolometer applications 144
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 142
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 142
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 141
Spontaneous ordering of self-assembled Ge island 140
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 139
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 137
SiGe intermixing in Ge/Si(100) islands 137
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 137
Experimental reflectivity spectra and additional boundary conditions in CdS 137
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 137
Structure of vapor-deposited Ge films as a function of substrate temperature 135
Low field magnetotransport in strained Si/SiGe cavities 135
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 135
Influence of the growth parameters on self-assembled Ge islands on Si (100) 133
Characterization and luminescence of a-Si:H:Cl films 133
SiC formation on Si(100) via C60 precursors 132
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 132
Two-phonon resonant Brillouin scattering in CdS 131
Study of bonding configurations in amorphous GexSi1-x:H alloys 131
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 131
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 131
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 130
Electronic states of thin epitaxial layers of Ge on Si (100) 130
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 129
Intermixing-promoted scaling of Ge/Si(100) island sizes 129
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 129
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 127
Atomic force microscopy litography as a nanodevice development 127
Ge/Si(100) islands: growth dynamics versus growth rate 127
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 127
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 127
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 127
Investigation of SiGe-heterostructure nanowires 126
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 126
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 126
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 125
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 125
Defects in SiGe virtual substrates for high mobility electron gas 124
Spontaneous ordering of self-assembled-Ge island 123
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 122
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 122
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 122
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 121
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 119
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 119
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 119
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 119
Growth of thin C60 films on hydrogenated Si (100) surfaces 118
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 117
Gap states in a-Si:H by photoconductivity and absorption 116
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 116
Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high mobility two-dimensional electron gases 114
Single Electron Transistor based on modulation-doped SiGe heterostructures 113
Totale 14.378
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Categoria #
all - tutte 55.381
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.381
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020279 0 0 0 0 0 0 0 0 0 0 203 76
2020/20212.539 181 120 223 139 272 190 475 301 87 220 76 255
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/20252.103 30 67 311 3 14 96 808 384 263 121 6 0
Totale 19.014