Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 10.597
EU - Europa 6.201
AS - Asia 5.687
SA - Sud America 449
AF - Africa 81
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 6
Totale 23.033
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Nazione #
US - Stati Uniti d'America 10.535
CN - Cina 2.761
GB - Regno Unito 2.034
SG - Singapore 1.699
RU - Federazione Russa 1.252
UA - Ucraina 642
DE - Germania 526
SE - Svezia 493
VN - Vietnam 490
DK - Danimarca 475
BR - Brasile 332
HK - Hong Kong 249
FI - Finlandia 185
IT - Italia 163
AL - Albania 152
IE - Irlanda 152
TR - Turchia 142
IN - India 79
KR - Corea 49
BD - Bangladesh 41
AR - Argentina 40
IQ - Iraq 32
NL - Olanda 30
MX - Messico 27
FR - Francia 26
CA - Canada 21
CO - Colombia 21
ZA - Sudafrica 20
EC - Ecuador 18
UZ - Uzbekistan 17
VE - Venezuela 16
PH - Filippine 15
PL - Polonia 15
SA - Arabia Saudita 15
BE - Belgio 14
JP - Giappone 14
MA - Marocco 14
ES - Italia 13
ID - Indonesia 12
MY - Malesia 11
PK - Pakistan 11
AU - Australia 10
AZ - Azerbaigian 9
TN - Tunisia 9
EG - Egitto 7
ET - Etiopia 6
UY - Uruguay 6
DZ - Algeria 5
KE - Kenya 5
LB - Libano 5
PY - Paraguay 5
RO - Romania 5
CL - Cile 4
EU - Europa 4
JO - Giordania 4
NP - Nepal 4
OM - Oman 4
TH - Thailandia 4
BO - Bolivia 3
GE - Georgia 3
LT - Lituania 3
PE - Perù 3
PT - Portogallo 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
AT - Austria 2
BH - Bahrain 2
BW - Botswana 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
HN - Honduras 2
IL - Israele 2
JM - Giamaica 2
LY - Libia 2
NO - Norvegia 2
RS - Serbia 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BG - Bulgaria 1
BJ - Benin 1
BY - Bielorussia 1
CR - Costa Rica 1
GH - Ghana 1
GT - Guatemala 1
GY - Guiana 1
IM - Isola di Man 1
IR - Iran 1
IS - Islanda 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
Totale 23.019
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 841
Houston 694
Singapore 688
Seattle 647
Wilmington 614
Chandler 588
Nanjing 563
Cambridge 517
Jacksonville 428
Ann Arbor 392
Dearborn 348
Boardman 330
Hefei 290
Princeton 290
San Jose 280
Beijing 266
Hong Kong 238
Shenyang 202
Nanchang 176
Dallas 171
Dublin 152
Dong Ket 146
Tianjin 134
Ho Chi Minh City 125
Izmir 118
Hebei 110
Changsha 102
Jiaxing 95
Redwood City 93
Hanoi 80
Jinan 79
San Diego 75
New York 69
Moscow 64
Zhengzhou 56
Kunming 54
Plano 49
Guangzhou 47
Seoul 46
Hangzhou 45
Orange 45
Altamura 41
The Dalles 38
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Los Angeles 27
Flushing 25
Helsinki 24
Bari 22
Lanzhou 22
São Paulo 22
Haikou 19
Chicago 18
Shanghai 18
San Paolo di Civitate 16
Tashkent 16
Da Nang 14
Fuzhou 14
Milan 14
Norwalk 14
Santa Clara 14
Baghdad 13
Brussels 13
Warsaw 13
Fort Worth 12
London 12
Mumbai 12
Munich 12
San Francisco 12
Turku 12
Yubileyny 12
Boston 11
Caracas 11
Rio de Janeiro 11
San Mateo 11
Tokyo 11
Verona 11
Haiphong 10
Walnut 10
Baku 9
Chennai 9
Taiyuan 9
Curitiba 8
Johannesburg 8
Orem 8
Pune 8
Quito 8
Biên Hòa 7
Changchun 7
Medellín 7
Mexico City 7
Phoenix 7
Rome 7
Addis Ababa 6
Totale 16.069
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Nome #
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 242
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 236
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 232
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 228
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 222
Active electric near field imaging of electronic devices 218
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 216
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 215
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 214
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 208
A single electron transistor based on Si/SiGe wires 208
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 208
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 208
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 207
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 205
Conduction-band intersubband transitions in Ge/SiGe quantum wells 203
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 203
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 201
Metal-Ge-Si heterostructures for near infrared light detection 199
2DEG based on strained Si on SGOI substrate 197
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 192
INFRARED-ANALYSIS OF A-GE1-XNX-H 192
Ordered growth of Ge island clusters on strain-engineered Si surfaces 192
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 191
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 191
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 190
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 188
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 187
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 187
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 187
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 186
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 186
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 185
Enhanced core excitons in amorphous semiconductors 185
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 184
Conductance quantization in etched Si/SiGe quantum point contacts 183
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 182
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 181
Characterization and luminescence of a-Si:H:Cl films 179
Quantum transport in low-dimensional AlGaN/GaN systems 179
Electric-field-induced interference effects at the ground exciton level in GaAs 176
Atomic force microscopy litography as a nanodevice development 176
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 176
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 172
EXAFS investigation of amorphous-to-crystal transition in Ge 172
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 172
Ge/Si (001) photodetector for near infrared light 171
Field-induced tunneling in SiGe wires 169
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 169
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 168
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 167
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 167
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 167
SiGe intermixing in Ge/Si(100) islands 166
Structure of vapor-deposited Ge films as a function of substrate temperature 166
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 166
Influence of the growth parameters on self-assembled Ge islands on Si (100) 165
Terahertz electrodynamics in high electron-mobility transistors 165
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 165
Investigation of SiGe-heterostructure nanowires 164
Low field magnetotransport in strained Si/SiGe cavities 164
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 162
SiC formation on Si(100) via C60 precursors 162
Electronic states of thin epitaxial layers of Ge on Si (100) 162
Two-phonon resonant Brillouin scattering in CdS 162
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 161
Spontaneous ordering of self-assembled Ge island 160
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 160
Doped silicon and NIS junctions for bolometer applications 160
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 160
Intermixing-promoted scaling of Ge/Si(100) island sizes 159
Ge/Si(100) islands: growth dynamics versus growth rate 159
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 158
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 155
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 154
Study of bonding configurations in amorphous GexSi1-x:H alloys 154
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 154
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 154
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 154
Experimental reflectivity spectra and additional boundary conditions in CdS 153
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 150
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 150
Growth of thin C60 films on hydrogenated Si (100) surfaces 150
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 149
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 148
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 148
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 147
Plasma-assisted chemical vapor deposition growth of SiC on Si (100): Morphology and electronic structure 147
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 147
Spontaneous ordering of self-assembled-Ge island 146
Low field magnetotransport in strained Si-cavities 145
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 145
CONDUCTIVITY AND PHOTOCONDUCTIVITY OF N-DOPED HYDROGENATED AMORPHOUS-SILICON TREATED WITH A CO2-LASER 143
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 143
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 143
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 142
Defects in SiGe virtual substrates for high mobility electron gas 142
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 140
Gap states in a-Si:H by photoconductivity and absorption 140
Spontaneous Ge island ordering promoted by partial silicon capping 139
Totale 17.447
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Categoria #
all - tutte 68.961
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 68.961
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021551 0 0 0 0 0 0 0 0 0 220 76 255
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/20252.418 30 67 311 3 14 96 808 384 263 121 160 161
2025/20263.900 382 558 256 499 408 359 507 106 306 519 0 0
Totale 23.229