Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 9.296
EU - Europa 4.934
AS - Asia 2.267
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 2
AF - Africa 1
Totale 16.514
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Nazione #
US - Stati Uniti d'America 9.291
GB - Regno Unito 2.009
CN - Cina 1.991
UA - Ucraina 637
SE - Svezia 490
DE - Germania 475
DK - Danimarca 475
RU - Federazione Russa 164
FI - Finlandia 154
IE - Irlanda 150
AL - Albania 149
IT - Italia 149
VN - Vietnam 146
TR - Turchia 117
BE - Belgio 28
NL - Olanda 24
FR - Francia 14
AU - Australia 8
CA - Canada 5
RO - Romania 5
EU - Europa 4
CZ - Repubblica Ceca 3
IQ - Iraq 3
JP - Giappone 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BR - Brasile 2
ES - Italia 2
SG - Singapore 2
AT - Austria 1
BD - Bangladesh 1
EG - Egitto 1
IM - Isola di Man 1
IN - India 1
IR - Iran 1
KG - Kirghizistan 1
LU - Lussemburgo 1
NO - Norvegia 1
PL - Polonia 1
PT - Portogallo 1
TW - Taiwan 1
Totale 16.514
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Houston 693
Ashburn 662
Seattle 628
Wilmington 614
Chandler 588
Nanjing 562
Cambridge 517
Jacksonville 427
Ann Arbor 392
Dearborn 348
Princeton 290
Shenyang 200
Nanchang 175
Dublin 150
Beijing 146
Dong Ket 146
Tianjin 125
Izmir 117
Hebei 110
Changsha 98
Jiaxing 95
Redwood City 93
Jinan 77
San Diego 75
Boardman 63
New York 57
Kunming 50
Plano 49
Zhengzhou 49
Orange 45
Hangzhou 44
Altamura 41
Guangzhou 34
Ningbo 31
Venezia 31
Taizhou 30
Bremen 28
Brussels 28
Flushing 25
Hefei 24
Bari 22
Lanzhou 20
Haikou 19
San Paolo di Civitate 16
Fuzhou 14
Norwalk 14
London 13
Fort Worth 12
Milan 12
San Mateo 11
Verona 11
Walnut 10
Taiyuan 8
Changchun 7
Alameda 6
Mountain View 6
Rome 6
Saint Petersburg 6
Stevenage 6
Auburn Hills 5
Chiswick 5
Helsinki 5
Shanghai 5
Dallas 4
Lawrence 4
New Bedfont 4
Qingdao 4
Washington 4
Westminster 4
Chengdu 3
Eugene 3
Hounslow 3
Morgan Hill 3
North York 3
Andover 2
Baghdad 2
Brno 2
Chicago 2
Columbus 2
Indiana 2
Laurel 2
Madrid 2
Muenster 2
Nürnberg 2
Shaoxing 2
Tokyo 2
Amsterdam 1
Atlanta 1
Augusta 1
Bagnara Calabra 1
Baotou 1
Bishkek 1
Brisbane 1
Caxambu 1
Centrale 1
Chongqing 1
Dhaka 1
Totale 13.140
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Nome #
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 179
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 173
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 168
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 166
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 165
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 164
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 160
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 160
Conduction-band intersubband transitions in Ge/SiGe quantum wells 157
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 154
Metal-Ge-Si heterostructures for near infrared light detection 151
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 149
INFRARED-ANALYSIS OF A-GE1-XNX-H 148
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 147
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 146
Active electric near field imaging of electronic devices 144
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 144
Ordered growth of Ge island clusters on strain-engineered Si surfaces 144
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 143
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 142
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 142
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 141
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 141
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 139
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 139
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 138
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 138
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 137
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 137
Quantum transport in low-dimensional AlGaN/GaN systems 136
Ge/Si (001) photodetector for near infrared light 135
Enhanced core excitons in amorphous semiconductors 134
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 134
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 133
Electric-field-induced interference effects at the ground exciton level in GaAs 131
Terahertz electrodynamics in high electron-mobility transistors 131
Field-induced tunneling in SiGe wires 130
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 130
EXAFS investigation of amorphous-to-crystal transition in Ge 130
A single electron transistor based on Si/SiGe wires 129
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 129
2DEG based on strained Si on SGOI substrate 129
Doped silicon and NIS junctions for bolometer applications 129
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 128
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 128
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 126
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 126
SiGe intermixing in Ge/Si(100) islands 126
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 125
SiC formation on Si(100) via C60 precursors 125
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 125
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 125
Spontaneous ordering of self-assembled Ge island 124
Experimental reflectivity spectra and additional boundary conditions in CdS 124
Low field magnetotransport in strained Si/SiGe cavities 122
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 121
Intermixing-promoted scaling of Ge/Si(100) island sizes 120
Structure of vapor-deposited Ge films as a function of substrate temperature 120
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 120
Influence of the growth parameters on self-assembled Ge islands on Si (100) 118
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 118
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 118
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 117
Study of bonding configurations in amorphous GexSi1-x:H alloys 117
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 116
Conductance quantization in etched Si/SiGe quantum point contacts 116
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 115
Ge/Si(100) islands: growth dynamics versus growth rate 115
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 115
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 114
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 114
Electronic states of thin epitaxial layers of Ge on Si (100) 113
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 112
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 112
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 111
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 111
Two-phonon resonant Brillouin scattering in CdS 111
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 111
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 111
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 110
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 110
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 110
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 109
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 108
Characterization and luminescence of a-Si:H:Cl films 108
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 108
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 108
Investigation of SiGe-heterostructure nanowires 107
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 106
Growth of thin C60 films on hydrogenated Si (100) surfaces 106
Defects in SiGe virtual substrates for high mobility electron gas 106
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 103
LOCAL ORDER IN SILICON - GERMANIUM ALLOYS AND AT SILICON - GERMANIUM HETEROJUNCTIONS BY ANALYSIS OF GE-3D CORE LEVELS 102
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 101
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 101
Spontaneous ordering of self-assembled-Ge island 101
Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high mobility two-dimensional electron gases 101
Gap states in a-Si:H by photoconductivity and absorption 100
Atomic force microscopy litography as a nanodevice development 100
Single Electron Transistor based on modulation-doped SiGe heterostructures 100
Totale 12.671
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Categoria #
all - tutte 35.739
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.739
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.590 0 0 0 0 0 182 322 148 8 247 776 907
2019/20205.639 1.308 452 205 661 441 460 524 452 696 161 203 76
2020/20212.539 181 120 223 139 272 190 475 301 87 220 76 255
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.684 208 204 89 175 195 382 3 157 193 8 47 23
2023/2024294 54 70 33 21 29 87 0 0 0 0 0 0
Totale 16.710