Benvenuti nell'Anagrafe della Ricerca d'Ateneo

EVANGELISTI, Florestano
 Distribuzione geografica
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Continente #
NA - Nord America 10.828
EU - Europa 6.213
AS - Asia 5.698
SA - Sud America 459
AF - Africa 81
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 6
Totale 23.297
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Nazione #
US - Stati Uniti d'America 10.755
CN - Cina 2.764
GB - Regno Unito 2.034
SG - Singapore 1.700
RU - Federazione Russa 1.252
UA - Ucraina 643
DE - Germania 526
SE - Svezia 493
VN - Vietnam 492
DK - Danimarca 475
BR - Brasile 337
HK - Hong Kong 250
FI - Finlandia 185
IT - Italia 169
AL - Albania 153
IE - Irlanda 152
TR - Turchia 142
IN - India 80
KR - Corea 49
BD - Bangladesh 44
AR - Argentina 41
IQ - Iraq 32
NL - Olanda 30
MX - Messico 27
FR - Francia 26
CA - Canada 24
CO - Colombia 24
ZA - Sudafrica 20
EC - Ecuador 18
UZ - Uzbekistan 17
VE - Venezuela 16
BE - Belgio 15
PH - Filippine 15
PL - Polonia 15
SA - Arabia Saudita 15
JP - Giappone 14
MA - Marocco 14
ES - Italia 13
ID - Indonesia 12
MY - Malesia 11
PK - Pakistan 11
AU - Australia 10
AZ - Azerbaigian 9
TN - Tunisia 9
EG - Egitto 7
ET - Etiopia 6
UY - Uruguay 6
CR - Costa Rica 5
DZ - Algeria 5
KE - Kenya 5
LB - Libano 5
PY - Paraguay 5
RO - Romania 5
CL - Cile 4
EU - Europa 4
JO - Giordania 4
NP - Nepal 4
OM - Oman 4
PE - Perù 4
PT - Portogallo 4
TH - Thailandia 4
BA - Bosnia-Erzegovina 3
BO - Bolivia 3
GE - Georgia 3
JM - Giamaica 3
LT - Lituania 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
AT - Austria 2
BB - Barbados 2
BH - Bahrain 2
BW - Botswana 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
DO - Repubblica Dominicana 2
HN - Honduras 2
IL - Israele 2
LY - Libia 2
NI - Nicaragua 2
NO - Norvegia 2
RS - Serbia 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BJ - Benin 1
BY - Bielorussia 1
GH - Ghana 1
GT - Guatemala 1
GY - Guiana 1
IM - Isola di Man 1
IR - Iran 1
IS - Islanda 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 23.282
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Città #
Southend 1.858
Fairfield 1.545
Woodbridge 1.467
Ashburn 870
Houston 694
Singapore 689
Seattle 647
Wilmington 614
Chandler 588
Nanjing 563
Cambridge 517
Jacksonville 428
Ann Arbor 392
San Jose 358
Dearborn 348
Boardman 330
Princeton 291
Hefei 290
Beijing 266
Hong Kong 239
Shenyang 202
Dallas 178
Nanchang 176
Dublin 152
Dong Ket 146
Tianjin 134
Ho Chi Minh City 125
Izmir 118
Hebei 110
Changsha 102
Jiaxing 95
Redwood City 93
Hanoi 80
Jinan 79
San Diego 75
New York 71
Moscow 64
Zhengzhou 56
Kunming 54
Plano 49
Guangzhou 47
Seoul 46
Hangzhou 45
Orange 45
Altamura 41
The Dalles 38
Los Angeles 32
Ningbo 31
Venezia 31
Eitensheim 30
Taizhou 30
Bremen 28
Flushing 25
Helsinki 24
São Paulo 24
Bari 22
Lanzhou 22
Santa Clara 22
Chicago 21
Haikou 19
Shanghai 18
San Paolo di Civitate 16
Tashkent 16
Da Nang 14
Fuzhou 14
Milan 14
Norwalk 14
Baghdad 13
Brussels 13
Fort Worth 13
Warsaw 13
London 12
Mumbai 12
Munich 12
San Francisco 12
Turku 12
Yubileyny 12
Boston 11
Caracas 11
Rio de Janeiro 11
San Mateo 11
Tokyo 11
Verona 11
Haiphong 10
Walnut 10
Baku 9
Chennai 9
Medellín 9
Taiyuan 9
Curitiba 8
Johannesburg 8
Orem 8
Pune 8
Quito 8
Rome 8
Atlanta 7
Biên Hòa 7
Bogotá 7
Brooklyn 7
Changchun 7
Totale 16.211
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Nome #
Atomic force microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 243
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 238
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates 237
Anomalous Franz-Keldysh effect in the electroreflectance of semiconductors 232
EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS 223
Active electric near field imaging of electronic devices 221
Electronic states and band lineups in c-Si(100)/a-Si1-xCx:H heterojunctions 220
DOUBLE-ELECTRON EXCITATION AT THE SI K-EDGE OF AMORPHOUS-SILICON 216
A-SI1-XGEX-H ALLOYS FOR SOLAR-CELLS 216
Conduction-band intersubband transitions in Ge/SiGe quantum wells 213
ATOMIC AND ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 212
SPHERICAL WAVE ANALYSIS AND MULTIPLE-SCATTERING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON 210
A single electron transistor based on Si/SiGe wires 209
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 209
AMORPHOUS HYDROGENATED ALLOYS - A COMPARATIVE EXAFS STUDY OF A-SI1-XCX-H, A-SI1-XGEX-H, A-SINX-H AT THE SILICON K-EDGE 209
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 206
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 205
STRUCTURAL STUDY OF A-SI1-XCX-H BY EXAFS AND X-RAY-SCATTERING 203
Metal-Ge-Si heterostructures for near infrared light detection 202
2DEG based on strained Si on SGOI substrate 200
Ordered growth of Ge island clusters on strain-engineered Si surfaces 196
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 195
INFRARED-ANALYSIS OF A-GE1-XNX-H 195
EXAFS DETERMINATION OF THE LOCAL BONDING CONFIGURATION OF P IN A-SI-H 194
A-SI-H BASED PARTICLE DETECTORS WITH LOW DEPLETION VOLTAGE 193
VIBRATIONAL CORRELATION-FUNCTION IN AMORPHOUS COVALENT SOLIDS 192
Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques 191
Heteroepitaxial growth of Ge on (111) Si by vacuum evaporation 190
Enhanced core excitons in amorphous semiconductors 189
AMORPHOUS SI/GE HETEROJUNCTIONS - BAND DISCONTINUITIES AND LOCAL ORDER STUDIED BY PHOTOEMISSION SPECTROSCOPY 189
Photoemission studies of a-SixC1-x:H/a-Si and a- SixC1-x:H/a-Si:H heterojunctions 188
Monolithic focal plane arrays for terahertz active spectroscopic imaging: an experimental study 188
Metal-semiconductor-metal Near infrared light detector based on epitaxial Ge/Si 188
PROPERTIES OF AMORPHOUS-SILICON CARBON ALLOYS WITH VERY-LOW DENSITIES OF STATES 186
STRUCTURAL-PROPERTIES OF A-SI AND A-SI-H BY EXAFS 186
Conductance quantization in etched Si/SiGe quantum point contacts 186
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 184
Characterization and luminescence of a-Si:H:Cl films 183
Quantum transport in low-dimensional AlGaN/GaN systems 183
Brillouin scattering efficiencies of exciton polaritons and the additional boundary conditions in CdS 183
Atomic force microscopy litography as a nanodevice development 181
Electric-field-induced interference effects at the ground exciton level in GaAs 179
STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS AS INVESTIGATED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE 176
X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 175
Ge/Si (001) photodetector for near infrared light 174
EXAFS investigation of amorphous-to-crystal transition in Ge 172
SHORT-RANGE ORDER IN AMORPHOUS GERMANIUM-NITROGEN ALLOYS STUDIED BY EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY 172
SiGe intermixing in Ge/Si(100) islands 170
Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection 170
A-SI-H P-I-N JUNCTIONS AS IONIZING PARTICLE DETECTORS 170
DETECTION OF STRONGLY IONIZING PARTICLES WITH A HYDROGENATED AMORPHOUS-SILICON DETECTOR 170
Field-induced tunneling in SiGe wires 169
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 169
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 168
Structure of vapor-deposited Ge films as a function of substrate temperature 168
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 168
Influence of the growth parameters on self-assembled Ge islands on Si (100) 167
Investigation of SiGe-heterostructure nanowires 166
Study of the coupling of terahertz radiation to heterostructure transistors with a Free Electron Laser source 166
INFRARED AND OPTICAL STUDY OF A-SIN ALLOYS 165
Terahertz electrodynamics in high electron-mobility transistors 165
Electronic states of thin epitaxial layers of Ge on Si (100) 164
Two-phonon resonant Brillouin scattering in CdS 164
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 164
Low field magnetotransport in strained Si/SiGe cavities 164
SiC formation on Si(100) via C60 precursors 163
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 161
Intermixing-promoted scaling of Ge/Si(100) island sizes 161
Crossed and parallel-field magneto-electro-reflectance of germanium in nonuniform electric field 161
Ge/Si(100) islands: growth dynamics versus growth rate 161
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 161
Spontaneous ordering of self-assembled Ge island 160
Doped silicon and NIS junctions for bolometer applications 160
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 160
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 158
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 157
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 156
Study of bonding configurations in amorphous GexSi1-x:H alloys 155
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors 155
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 154
Density of states modifications in amorphous and hydrogenated amorphous Germanium and their effect on 3d core levels binding energy 153
Experimental reflectivity spectra and additional boundary conditions in CdS 153
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(100) 150
Growth of thin C60 films on hydrogenated Si (100) surfaces 150
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching 149
Spectroscopic study of plasma wave resonances of a two-dimensional electron gas in a microcavity at low temperatures 149
Photoluminescence of strained and relaxed multilayered Ge islands on Si(001) 149
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field 148
Low field magnetotransport in strained Si-cavities 147
Plasma-assisted chemical vapor deposition growth of SiC on Si (100): Morphology and electronic structure 147
Spontaneous ordering of self-assembled-Ge island 146
CONDUCTIVITY AND PHOTOCONDUCTIVITY OF N-DOPED HYDROGENATED AMORPHOUS-SILICON TREATED WITH A CO2-LASER 146
INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC PROPERTIES OF GLOW-DISCHARGE AMORPHOUS-SILICON CARBON ALLOYS 146
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 145
STRUCTURE OF A-SI1-XCX-H ALLOYS BY WIDE-ANGLE X-RAY-SCATTERING - DETAILED DETERMINATION OF FIRST-SHELL AND 2ND-SHELL ENVIRONMENT FOR SI AND C ATOMS 145
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si(100) 144
Spontaneous Ge island ordering promoted by partial silicon capping 143
Defects in SiGe virtual substrates for high mobility electron gas 142
ELECTRONIC STATES OF A-SI-H UPON CS ADSORPTION AND DEEP DEFECT CREATION 141
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 140
Totale 17.655
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Categoria #
all - tutte 72.466
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 72.466
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.247 61 163 2 27 317 83 73 41 138 85 52 205
2022/20231.670 208 204 89 175 195 382 0 156 190 4 45 22
2023/2024509 51 67 30 19 20 113 10 69 1 37 1 91
2024/20252.418 30 67 311 3 14 96 808 384 263 121 160 161
2025/20264.136 382 558 256 499 408 359 507 106 306 569 121 65
2026/202728 28 0 0 0 0 0 0 0 0 0 0 0
Totale 23.493