Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 12.565
EU - Europa 8.170
AS - Asia 6.565
SA - Sud America 545
Continente sconosciuto - Info sul continente non disponibili 472
AF - Africa 134
OC - Oceania 20
Totale 28.471
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Nazione #
US - Stati Uniti d'America 12.409
CN - Cina 2.913
SG - Singapore 1.916
GB - Regno Unito 1.705
RU - Federazione Russa 1.645
DK - Danimarca 1.582
VN - Vietnam 881
SE - Svezia 718
IT - Italia 706
DE - Germania 636
BR - Brasile 394
UA - Ucraina 362
IE - Irlanda 150
FI - Finlandia 140
HK - Hong Kong 135
TR - Turchia 115
AL - Albania 111
NL - Olanda 111
BD - Bangladesh 102
IN - India 93
CA - Canada 81
FR - Francia 74
JP - Giappone 70
AR - Argentina 47
KR - Corea 47
IQ - Iraq 46
ID - Indonesia 37
MX - Messico 33
ZA - Sudafrica 32
BE - Belgio 31
PL - Polonia 31
AT - Austria 27
CZ - Repubblica Ceca 27
SN - Senegal 26
PH - Filippine 25
CO - Colombia 24
PK - Pakistan 24
EC - Ecuador 23
ES - Italia 21
AU - Australia 19
MA - Marocco 19
SA - Arabia Saudita 18
TH - Thailandia 18
GR - Grecia 15
RO - Romania 15
MD - Moldavia 14
VE - Venezuela 14
CL - Cile 13
KE - Kenya 13
MY - Malesia 12
TN - Tunisia 12
TW - Taiwan 12
JO - Giordania 11
PY - Paraguay 11
LB - Libano 10
UZ - Uzbekistan 9
CH - Svizzera 8
EG - Egitto 8
IR - Iran 8
LT - Lituania 8
OM - Oman 8
AE - Emirati Arabi Uniti 7
A2 - ???statistics.table.value.countryCode.A2??? 6
AZ - Azerbaigian 6
BO - Bolivia 6
CR - Costa Rica 6
JM - Giamaica 6
NO - Norvegia 6
PE - Perù 6
UY - Uruguay 6
KW - Kuwait 5
NP - Nepal 5
PT - Portogallo 5
DO - Repubblica Dominicana 4
DZ - Algeria 4
ET - Etiopia 4
GT - Guatemala 4
IL - Israele 4
KG - Kirghizistan 4
LK - Sri Lanka 4
NI - Nicaragua 4
PS - Palestinian Territory 4
RS - Serbia 4
AM - Armenia 3
CI - Costa d'Avorio 3
EE - Estonia 3
EU - Europa 3
KZ - Kazakistan 3
LV - Lettonia 3
NG - Nigeria 3
PA - Panama 3
TT - Trinidad e Tobago 3
BY - Bielorussia 2
DM - Dominica 2
GA - Gabon 2
HN - Honduras 2
KH - Cambogia 2
MM - Myanmar 2
MT - Malta 2
PR - Porto Rico 2
Totale 27.978
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Città #
Fairfield 1.576
Southend 1.460
Ashburn 1.232
Woodbridge 1.091
Singapore 1.049
Wilmington 782
Chandler 770
Houston 676
Seattle 644
Ann Arbor 593
San Jose 576
Cambridge 519
Beijing 401
Nanjing 359
Boardman 337
Jacksonville 267
Rome 262
Dearborn 256
Dallas 231
Ho Chi Minh City 231
Hefei 224
Princeton 207
Hanoi 180
New York 173
Jinan 153
Shenyang 139
Dublin 138
Nanchang 135
Hong Kong 123
Moscow 121
Plano 110
Dong Ket 108
Hebei 108
Tianjin 100
San Diego 94
Los Angeles 93
Redwood City 93
San Mateo 93
Shanghai 91
Munich 86
The Dalles 82
Izmir 81
Changsha 72
Frankfurt am Main 66
Amsterdam 62
Tokyo 62
Guangzhou 55
Kunming 55
London 52
Da Nang 51
Bremen 50
São Paulo 50
Hangzhou 49
Zhengzhou 48
Eitensheim 46
Jiaxing 46
Helsinki 43
Orem 43
Santa Clara 42
Altamura 41
Seoul 41
Milan 40
Taizhou 38
Redmond 35
Chicago 34
Ningbo 34
Haikou 33
San Paolo di Civitate 32
Brussels 30
Florence 30
Haiphong 30
Montreal 29
Venezia 27
Warsaw 27
Dakar 26
Bari 24
Fuzhou 24
Orange 24
Baghdad 23
Brno 23
Phoenix 23
Chennai 21
Atlanta 19
Johannesburg 19
Taiyuan 19
Buffalo 18
Columbus 18
Cornaredo 18
Manchester 18
San Francisco 18
Toronto 18
Washington 18
Brooklyn 17
Boston 16
Lanzhou 16
Stockholm 16
Can Tho 15
Council Bluffs 14
Denver 14
Hải Dương 14
Totale 17.930
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 362
2DEG based on strained Si on SGOI substrate 314
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 314
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 305
2DEG based on strained Si on SGOI substrate 295
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 289
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 287
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 287
Early stage of CVD graphene synthesis on Ge(001) substrate 284
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 278
2DEG based on strained Si on SGOI substrate 276
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 275
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 275
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 274
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 271
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 270
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 267
Epi-cleaning of Ge/GeSn heterostructures 264
SiGe intermixing in Ge/Si(100) islands 264
Conduction band intersubband transitions in Ge/SiGe quantum wells 262
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 261
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 252
Commensurability and stability in nonperiodic systems 251
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 250
Ordering self-assembled islands without substrate patterning 246
Driving with temperature the synthesis of graphene on Ge(110) 245
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 244
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 242
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 242
Ordered growth of Ge island clusters on strain-engineered Si surfaces 235
Evolution of Ge/Si(001) islands during Si capping at high temperature 235
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 235
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 235
Germanium quantum fountain structures on silicon substrates 234
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 231
Strain relaxation in high Ge content SiGe layers deposited on Si 230
Influence of the growth parameters on self-assembled Ge islands on Si(100) 229
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 229
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 229
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 227
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 226
Ge-Si intermixing in Ge quantum dots on Si 225
Intermixing-promoted scaling of Ge/Si(100) island sizes 224
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 223
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 222
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 222
Spontaneous Ge island ordering promoted by partial silicon capping 220
Photoluminescence from GeSn nano-heterostructures 219
Spontaneous Ge island ordering promoted by partial silicon capping 218
Growth of thin C-60 films on hydrogenated Si(100) surfaces 218
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 218
Self-ordering of a Ge island single layer induced by Si overgrowth 218
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 216
Ge/Si(100) islands: growth dynamics versus growth rate 216
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 214
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 213
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 212
Ge/Si(100) islands: Growth dynamics versus growth rate 212
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 212
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 212
Surface phase transitions of Ge(100) studied via valence band photoemission 211
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 211
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 210
N-type SiGe heterostructures for THz intersubband transitions 209
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 208
Strain relief mechanisms in Ge/Si(100) islands 208
Photoemission of Ge(110) at room and high temperature 208
Relaxed state of GexSi1-x islands embedded in Si 207
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 206
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 206
Electron-phonon coupling in n-type Ge two-dimensional systems 206
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 205
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 204
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 203
Formation of extended thermal etch pits on annealed Ge wafers 202
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 201
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 199
Evolution of Ge/Si(001) islands during Si capping at high temperature 198
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 198
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 195
Evolution of Ge/Si(001) islands during Si capping at high temperature 194
Strain relaxation in high Ge content SiGe layers deposited on Si 194
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 193
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 193
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 192
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 191
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 190
On the role of specimen thickness in the chemistry quantification by HAADF 188
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 187
Spontaneous ordering of self-assembled-Ge island 185
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 185
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 185
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 185
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 184
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 181
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 180
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 180
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 180
QUANTUM EFFECTS IN AMORPHOUS SUPERSTRUCTURES 179
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 179
Totale 22.675
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Categoria #
all - tutte 96.431
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 96.431
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.361 0 0 54 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/20253.292 42 106 353 50 38 188 1.177 475 223 151 190 299
2025/20266.516 462 777 315 726 685 423 1.047 313 635 839 163 131
2026/2027364 159 123 82 0 0 0 0 0 0 0 0 0
Totale 28.471