Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 12.333
EU - Europa 8.125
AS - Asia 6.510
SA - Sud America 529
AF - Africa 134
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 10
Totale 27.661
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Nazione #
US - Stati Uniti d'America 12.195
CN - Cina 2.909
SG - Singapore 1.910
GB - Regno Unito 1.703
RU - Federazione Russa 1.645
DK - Danimarca 1.582
VN - Vietnam 878
SE - Svezia 718
IT - Italia 671
DE - Germania 634
BR - Brasile 389
UA - Ucraina 361
IE - Irlanda 150
FI - Finlandia 140
HK - Hong Kong 131
TR - Turchia 113
AL - Albania 111
NL - Olanda 110
IN - India 93
BD - Bangladesh 79
CA - Canada 78
FR - Francia 74
JP - Giappone 69
KR - Corea 47
AR - Argentina 46
IQ - Iraq 46
ID - Indonesia 33
ZA - Sudafrica 32
BE - Belgio 30
MX - Messico 30
PL - Polonia 30
AT - Austria 27
CZ - Repubblica Ceca 27
SN - Senegal 26
PK - Pakistan 24
PH - Filippine 23
CO - Colombia 22
ES - Italia 21
AU - Australia 19
MA - Marocco 19
EC - Ecuador 18
SA - Arabia Saudita 18
TH - Thailandia 18
GR - Grecia 15
RO - Romania 15
MD - Moldavia 14
CL - Cile 13
KE - Kenya 13
TN - Tunisia 12
TW - Taiwan 12
VE - Venezuela 12
JO - Giordania 11
PY - Paraguay 11
MY - Malesia 10
LB - Libano 9
UZ - Uzbekistan 9
CH - Svizzera 8
EG - Egitto 8
IR - Iran 8
LT - Lituania 8
OM - Oman 8
A2 - ???statistics.table.value.countryCode.A2??? 6
AE - Emirati Arabi Uniti 6
AZ - Azerbaigian 6
BO - Bolivia 6
NO - Norvegia 6
UY - Uruguay 6
CR - Costa Rica 5
JM - Giamaica 5
KW - Kuwait 5
NP - Nepal 5
PE - Perù 5
DO - Repubblica Dominicana 4
DZ - Algeria 4
ET - Etiopia 4
IL - Israele 4
KG - Kirghizistan 4
LK - Sri Lanka 4
PS - Palestinian Territory 4
PT - Portogallo 4
CI - Costa d'Avorio 3
EE - Estonia 3
EU - Europa 3
KZ - Kazakistan 3
LV - Lettonia 3
NG - Nigeria 3
NI - Nicaragua 3
RS - Serbia 3
AM - Armenia 2
BY - Bielorussia 2
GA - Gabon 2
HN - Honduras 2
KH - Cambogia 2
MT - Malta 2
PA - Panama 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AO - Angola 1
Totale 27.633
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Città #
Fairfield 1.576
Southend 1.460
Ashburn 1.181
Woodbridge 1.091
Singapore 1.047
Wilmington 782
Chandler 770
Houston 676
Seattle 644
Ann Arbor 593
San Jose 558
Cambridge 516
Beijing 398
Nanjing 359
Boardman 337
Jacksonville 267
Dearborn 256
Rome 253
Ho Chi Minh City 231
Dallas 227
Hefei 224
Princeton 206
Hanoi 180
New York 170
Jinan 153
Shenyang 139
Dublin 138
Nanchang 135
Moscow 121
Hong Kong 119
Plano 110
Dong Ket 108
Hebei 108
Tianjin 100
Redwood City 93
San Diego 93
San Mateo 93
Los Angeles 91
Shanghai 91
Munich 86
The Dalles 82
Izmir 81
Changsha 72
Frankfurt am Main 66
Amsterdam 62
Tokyo 62
Guangzhou 55
Kunming 55
Da Nang 51
London 51
Bremen 50
Hangzhou 49
São Paulo 49
Zhengzhou 48
Eitensheim 46
Jiaxing 46
Helsinki 43
Orem 43
Altamura 41
Seoul 41
Taizhou 38
Milan 35
Redmond 35
Santa Clara 35
Ningbo 34
Haikou 33
San Paolo di Civitate 32
Brussels 30
Chicago 30
Haiphong 30
Montreal 29
Florence 28
Venezia 27
Warsaw 27
Dakar 26
Fuzhou 24
Orange 24
Baghdad 23
Bari 23
Brno 23
Phoenix 22
Chennai 21
Johannesburg 19
Taiyuan 19
Atlanta 18
Columbus 18
Cornaredo 18
Manchester 18
Washington 18
Brooklyn 17
Toronto 17
Boston 16
Lanzhou 16
San Francisco 16
Stockholm 16
Buffalo 15
Can Tho 15
Hải Dương 14
Vienna 14
Ankara 13
Totale 17.799
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 361
2DEG based on strained Si on SGOI substrate 312
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 312
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 304
2DEG based on strained Si on SGOI substrate 292
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 286
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 286
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 283
Early stage of CVD graphene synthesis on Ge(001) substrate 281
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 277
2DEG based on strained Si on SGOI substrate 274
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 273
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 271
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 269
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 268
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 266
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 266
Epi-cleaning of Ge/GeSn heterostructures 263
SiGe intermixing in Ge/Si(100) islands 262
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 261
Conduction band intersubband transitions in Ge/SiGe quantum wells 258
Commensurability and stability in nonperiodic systems 251
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 248
Ordering self-assembled islands without substrate patterning 245
Driving with temperature the synthesis of graphene on Ge(110) 244
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 242
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 241
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 235
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 235
Ordered growth of Ge island clusters on strain-engineered Si surfaces 234
Evolution of Ge/Si(001) islands during Si capping at high temperature 234
Germanium quantum fountain structures on silicon substrates 234
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 233
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 230
Strain relaxation in high Ge content SiGe layers deposited on Si 229
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 228
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 226
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 226
Influence of the growth parameters on self-assembled Ge islands on Si(100) 225
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 225
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 225
Ge-Si intermixing in Ge quantum dots on Si 223
Intermixing-promoted scaling of Ge/Si(100) island sizes 223
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 221
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 221
Spontaneous Ge island ordering promoted by partial silicon capping 219
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 217
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 217
Photoluminescence from GeSn nano-heterostructures 217
Self-ordering of a Ge island single layer induced by Si overgrowth 217
Spontaneous Ge island ordering promoted by partial silicon capping 216
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 216
Ge/Si(100) islands: growth dynamics versus growth rate 214
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 213
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 212
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 212
Surface phase transitions of Ge(100) studied via valence band photoemission 210
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 209
Ge/Si(100) islands: Growth dynamics versus growth rate 209
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 208
Growth of thin C-60 films on hydrogenated Si(100) surfaces 208
Strain relief mechanisms in Ge/Si(100) islands 208
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 208
N-type SiGe heterostructures for THz intersubband transitions 207
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 207
Relaxed state of GexSi1-x islands embedded in Si 206
Photoemission of Ge(110) at room and high temperature 205
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 204
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 204
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 204
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 204
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 202
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 201
Formation of extended thermal etch pits on annealed Ge wafers 201
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 201
Evolution of Ge/Si(001) islands during Si capping at high temperature 196
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 196
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 194
Electron-phonon coupling in n-type Ge two-dimensional systems 194
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 193
Evolution of Ge/Si(001) islands during Si capping at high temperature 192
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 192
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 192
Strain relaxation in high Ge content SiGe layers deposited on Si 191
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 189
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 188
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 187
On the role of specimen thickness in the chemistry quantification by HAADF 185
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 185
Spontaneous ordering of self-assembled-Ge island 184
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 184
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 182
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 182
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 181
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 179
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 179
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 179
Symmetry transformation of the three-dimensional vortex system induced by two-dimensional square pinning potentials 178
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 178
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 177
Totale 22.436
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Categoria #
all - tutte 93.211
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 93.211
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.713 98 254 54 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/20253.292 42 106 353 50 38 188 1.177 475 223 151 190 299
2025/20266.516 462 777 315 726 685 423 1.047 313 635 839 163 131
2026/202713 13 0 0 0 0 0 0 0 0 0 0 0
Totale 28.120