Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 12.096
EU - Europa 8.085
AS - Asia 6.487
SA - Sud America 516
AF - Africa 134
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 10
Totale 27.348
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Nazione #
US - Stati Uniti d'America 11.978
CN - Cina 2.904
SG - Singapore 1.907
GB - Regno Unito 1.703
RU - Federazione Russa 1.645
DK - Danimarca 1.581
VN - Vietnam 877
SE - Svezia 718
IT - Italia 636
DE - Germania 634
BR - Brasile 383
UA - Ucraina 361
IE - Irlanda 150
FI - Finlandia 140
HK - Hong Kong 130
TR - Turchia 113
AL - Albania 111
NL - Olanda 110
IN - India 93
FR - Francia 73
JP - Giappone 69
BD - Bangladesh 66
CA - Canada 64
KR - Corea 47
IQ - Iraq 46
AR - Argentina 42
ID - Indonesia 33
ZA - Sudafrica 32
BE - Belgio 30
PL - Polonia 29
MX - Messico 28
AT - Austria 27
CZ - Repubblica Ceca 26
SN - Senegal 26
PK - Pakistan 24
PH - Filippine 23
CO - Colombia 21
ES - Italia 20
AU - Australia 19
MA - Marocco 19
SA - Arabia Saudita 18
TH - Thailandia 18
EC - Ecuador 17
GR - Grecia 15
RO - Romania 15
MD - Moldavia 14
CL - Cile 13
KE - Kenya 13
TN - Tunisia 12
TW - Taiwan 12
VE - Venezuela 12
JO - Giordania 11
PY - Paraguay 11
MY - Malesia 10
LB - Libano 9
UZ - Uzbekistan 9
CH - Svizzera 8
EG - Egitto 8
IR - Iran 8
LT - Lituania 8
OM - Oman 8
A2 - ???statistics.table.value.countryCode.A2??? 6
AE - Emirati Arabi Uniti 6
AZ - Azerbaigian 6
BO - Bolivia 6
NO - Norvegia 6
UY - Uruguay 6
KW - Kuwait 5
NP - Nepal 5
CR - Costa Rica 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
ET - Etiopia 4
IL - Israele 4
JM - Giamaica 4
KG - Kirghizistan 4
LK - Sri Lanka 4
PE - Perù 4
PS - Palestinian Territory 4
PT - Portogallo 4
CI - Costa d'Avorio 3
EE - Estonia 3
EU - Europa 3
KZ - Kazakistan 3
LV - Lettonia 3
NG - Nigeria 3
NI - Nicaragua 3
RS - Serbia 3
AM - Armenia 2
BY - Bielorussia 2
GA - Gabon 2
KH - Cambogia 2
MT - Malta 2
PA - Panama 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
Totale 27.321
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Città #
Fairfield 1.576
Southend 1.460
Ashburn 1.135
Woodbridge 1.091
Singapore 1.047
Wilmington 782
Chandler 770
Houston 676
Seattle 643
Ann Arbor 593
Cambridge 516
San Jose 513
Beijing 396
Nanjing 359
Boardman 337
Jacksonville 267
Dearborn 256
Rome 239
Ho Chi Minh City 231
Hefei 224
Dallas 221
Princeton 206
Hanoi 180
New York 160
Jinan 153
Shenyang 139
Dublin 138
Nanchang 135
Moscow 121
Hong Kong 118
Plano 110
Dong Ket 108
Hebei 108
Tianjin 100
Redwood City 93
San Diego 93
San Mateo 93
Shanghai 91
Los Angeles 86
Munich 86
Izmir 81
The Dalles 81
Changsha 72
Frankfurt am Main 66
Amsterdam 62
Tokyo 62
Guangzhou 55
Kunming 55
Da Nang 51
London 51
Bremen 50
Hangzhou 49
São Paulo 48
Zhengzhou 48
Eitensheim 46
Jiaxing 46
Helsinki 43
Orem 43
Altamura 41
Seoul 41
Taizhou 38
Redmond 35
Ningbo 34
Haikou 33
Milan 32
San Paolo di Civitate 32
Santa Clara 32
Brussels 30
Haiphong 30
Chicago 27
Venezia 27
Dakar 26
Florence 26
Warsaw 26
Fuzhou 24
Orange 24
Baghdad 23
Bari 23
Brno 22
Chennai 21
Phoenix 21
Johannesburg 19
Montreal 19
Taiyuan 19
Cornaredo 18
Manchester 18
Washington 18
Atlanta 17
Columbus 17
Boston 16
Brooklyn 16
Lanzhou 16
Stockholm 16
Can Tho 15
San Francisco 15
Hải Dương 14
Toronto 14
Vienna 14
Ankara 13
Changchun 13
Totale 17.634
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 361
2DEG based on strained Si on SGOI substrate 312
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 311
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 302
2DEG based on strained Si on SGOI substrate 290
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 286
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 285
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 282
Early stage of CVD graphene synthesis on Ge(001) substrate 279
2DEG based on strained Si on SGOI substrate 274
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 274
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 270
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 269
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 268
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 268
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 263
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 263
Epi-cleaning of Ge/GeSn heterostructures 262
SiGe intermixing in Ge/Si(100) islands 261
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 260
Conduction band intersubband transitions in Ge/SiGe quantum wells 254
Commensurability and stability in nonperiodic systems 249
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 246
Driving with temperature the synthesis of graphene on Ge(110) 243
Ordering self-assembled islands without substrate patterning 242
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 238
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 237
Evolution of Ge/Si(001) islands during Si capping at high temperature 234
Germanium quantum fountain structures on silicon substrates 234
Ordered growth of Ge island clusters on strain-engineered Si surfaces 232
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 231
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 230
Strain relaxation in high Ge content SiGe layers deposited on Si 227
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 226
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 226
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 226
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 223
Influence of the growth parameters on self-assembled Ge islands on Si(100) 222
Ge-Si intermixing in Ge quantum dots on Si 220
Intermixing-promoted scaling of Ge/Si(100) island sizes 220
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 220
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 219
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 219
Spontaneous Ge island ordering promoted by partial silicon capping 218
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 218
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 217
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 217
Self-ordering of a Ge island single layer induced by Si overgrowth 217
Spontaneous Ge island ordering promoted by partial silicon capping 215
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 215
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 214
Photoluminescence from GeSn nano-heterostructures 214
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 211
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 211
Surface phase transitions of Ge(100) studied via valence band photoemission 210
Ge/Si(100) islands: growth dynamics versus growth rate 209
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 208
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 207
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 207
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 207
Ge/Si(100) islands: Growth dynamics versus growth rate 206
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 206
Strain relief mechanisms in Ge/Si(100) islands 205
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 203
N-type SiGe heterostructures for THz intersubband transitions 203
Relaxed state of GexSi1-x islands embedded in Si 203
Photoemission of Ge(110) at room and high temperature 203
Growth of thin C-60 films on hydrogenated Si(100) surfaces 202
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 202
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 202
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 200
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 200
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 200
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 200
Formation of extended thermal etch pits on annealed Ge wafers 199
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 194
Evolution of Ge/Si(001) islands during Si capping at high temperature 193
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 192
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 192
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 191
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 190
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 189
Evolution of Ge/Si(001) islands during Si capping at high temperature 189
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 188
Strain relaxation in high Ge content SiGe layers deposited on Si 187
Electron-phonon coupling in n-type Ge two-dimensional systems 187
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 186
On the role of specimen thickness in the chemistry quantification by HAADF 185
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 183
Spontaneous ordering of self-assembled-Ge island 182
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 182
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 180
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 179
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 178
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 178
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 178
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 177
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 177
QUANTUM EFFECTS IN AMORPHOUS SUPERSTRUCTURES 175
Symmetry transformation of the three-dimensional vortex system induced by two-dimensional square pinning potentials 175
Totale 22.214
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Categoria #
all - tutte 89.703
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 89.703
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021653 0 0 0 0 0 0 0 0 0 264 154 235
2021/20221.713 98 254 54 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/20253.292 42 106 353 50 38 188 1.177 475 223 151 190 299
2025/20266.216 462 777 315 726 685 423 1.047 313 635 833 0 0
Totale 27.807