Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 9.983
EU - Europa 5.920
AS - Asia 2.373
AF - Africa 27
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 9
SA - Sud America 2
Totale 18.329
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Nazione #
US - Stati Uniti d'America 9.967
CN - Cina 1.905
GB - Regno Unito 1.630
DK - Danimarca 1.581
SE - Svezia 701
IT - Italia 501
DE - Germania 456
UA - Ucraina 355
SG - Singapore 187
IE - Irlanda 143
FI - Finlandia 126
RU - Federazione Russa 114
VN - Vietnam 108
AL - Albania 101
TR - Turchia 78
NL - Olanda 69
JP - Giappone 36
BE - Belgio 27
SN - Senegal 23
CZ - Repubblica Ceca 22
FR - Francia 22
IN - India 18
AU - Australia 15
CA - Canada 15
RO - Romania 14
AT - Austria 13
GR - Grecia 13
MD - Moldavia 11
IQ - Iraq 9
IR - Iran 8
A2 - ???statistics.table.value.countryCode.A2??? 6
BD - Bangladesh 6
CH - Svizzera 6
NO - Norvegia 6
LB - Libano 4
CI - Costa d'Avorio 3
EU - Europa 3
MY - Malesia 3
PK - Pakistan 3
PT - Portogallo 3
KR - Corea 2
PL - Polonia 2
AR - Argentina 1
CL - Cile 1
EE - Estonia 1
IL - Israele 1
JO - Giordania 1
KZ - Kazakistan 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MK - Macedonia 1
MX - Messico 1
NP - Nepal 1
RS - Serbia 1
TW - Taiwan 1
Totale 18.329
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Città #
Fairfield 1.576
Southend 1.460
Woodbridge 1.091
Wilmington 781
Ashburn 772
Chandler 770
Houston 668
Seattle 634
Ann Arbor 593
Cambridge 516
Nanjing 359
Boardman 337
Jacksonville 265
Dearborn 256
Princeton 206
Rome 185
Beijing 177
Jinan 150
Nanchang 135
Shenyang 135
Dublin 131
Singapore 131
Plano 110
Dong Ket 108
Hebei 108
New York 100
Redwood City 93
San Diego 93
San Mateo 93
Tianjin 91
Shanghai 84
Izmir 78
Changsha 63
Kunming 55
Bremen 50
Hangzhou 47
Amsterdam 46
Eitensheim 46
Jiaxing 46
Guangzhou 45
Zhengzhou 42
Altamura 41
Taizhou 36
Helsinki 35
Redmond 35
Ningbo 34
Tokyo 34
Haikou 33
London 33
San Paolo di Civitate 32
Hefei 29
Brussels 27
Venezia 27
Florence 26
Orange 24
Dakar 23
Brno 22
Milan 22
Fuzhou 21
Bari 20
Cornaredo 18
Taiyuan 17
Dallas 16
Lanzhou 16
Washington 16
Norwalk 12
Dresden 11
Pune 11
Chisinau 10
Menlo Park 10
Munich 10
San Francisco 10
Augusta 9
Kilburn 9
Los Angeles 9
Alameda 8
Changchun 8
Chiswick 8
Columbus 8
Genzano di Roma 8
Stevenage 8
Westminster 8
Auburn Hills 7
Falls Church 7
Lawrence 7
Mountain View 7
Baotou 6
Berlin 6
Buffalo 6
Flushing 6
Indiana 6
North York 6
Vienna 6
Wuhan 6
Baghdad 5
Serra 5
Atlanta 4
Chicago 4
Edinburgh 4
Fort Worth 4
Totale 13.622
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 309
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 217
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 216
2DEG based on strained Si on SGOI substrate 214
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 213
SiGe intermixing in Ge/Si(100) islands 207
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 207
Epi-cleaning of Ge/GeSn heterostructures 205
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 205
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 201
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 190
Ordering self-assembled islands without substrate patterning 189
Germanium quantum fountain structures on silicon substrates 187
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 187
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 184
2DEG based on strained Si on SGOI substrate 184
2DEG based on strained Si on SGOI substrate 183
Early stage of CVD graphene synthesis on Ge(001) substrate 183
Strain relaxation in high Ge content SiGe layers deposited on Si 181
Ordered growth of Ge island clusters on strain-engineered Si surfaces 181
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 180
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 179
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 179
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 177
Influence of the growth parameters on self-assembled Ge islands on Si(100) 177
Conduction band intersubband transitions in Ge/SiGe quantum wells 177
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 176
Evolution of Ge/Si(001) islands during Si capping at high temperature 173
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 173
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 173
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 173
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 172
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 171
Self-ordering of a Ge island single layer induced by Si overgrowth 171
Spontaneous Ge island ordering promoted by partial silicon capping 170
Intermixing-promoted scaling of Ge/Si(100) island sizes 170
Spontaneous Ge island ordering promoted by partial silicon capping 169
Ge-Si intermixing in Ge quantum dots on Si 168
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 167
Surface phase transitions of Ge(100) studied via valence band photoemission 166
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 166
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 166
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 166
Commensurability and stability in nonperiodic systems 165
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 163
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 163
Strain relief mechanisms in Ge/Si(100) islands 163
Ge/Si(100) islands: Growth dynamics versus growth rate 161
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 160
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 160
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 160
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 159
Formation of extended thermal etch pits on annealed Ge wafers 159
Ge/Si(100) islands: growth dynamics versus growth rate 159
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 159
Relaxed state of GexSi1-x islands embedded in Si 157
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 155
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 154
Photoemission of Ge(110) at room and high temperature 153
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 152
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 151
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 150
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 148
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 148
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 148
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 147
Evolution of Ge/Si(001) islands during Si capping at high temperature 147
N-type SiGe heterostructures for THz intersubband transitions 147
Evolution of Ge/Si(001) islands during Si capping at high temperature 147
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 147
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 146
On the role of specimen thickness in the chemistry quantification by HAADF 145
Growth of thin C-60 films on hydrogenated Si(100) surfaces 145
Driving with temperature the synthesis of graphene on Ge(110) 145
Spontaneous ordering of self-assembled-Ge island 143
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 142
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 141
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 141
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 141
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 140
Strain relaxation in high Ge content SiGe layers deposited on Si 139
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 137
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 136
Symmetry transformation of the three-dimensional vortex system induced by two-dimensional square pinning potentials 133
Photoluminescence from GeSn nano-heterostructures 131
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 128
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 128
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 127
Spontaneous ordering of self-assembled Ge island 125
SiC formation on Si(100) via C-60 precursors 124
Plastic and elastic symmetry transformations in the vortex lattice 124
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 124
The electronic structure of the 3 root 3 x 3 root 3R30 degrees-C-60/Ge(111) system as measured by angle-resolved photoemission 124
Strain relief mechanism in Ge/Si(100) islands 123
Interaction of C-60 with Ge(111) in the 3 root 3X3 root R30 degrees phase: A (2X2) model 123
Direct evidence of C-60 chemical bonding on Si(100) 122
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 122
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 121
QUANTUM EFFECTS IN AMORPHOUS SUPERSTRUCTURES 118
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 117
Totale 16.139
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Categoria #
all - tutte 58.268
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.268
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.736 0 0 177 477 405 426 616 511 693 169 149 113
2020/20212.964 119 176 268 191 309 286 325 319 318 264 154 235
2021/20221.713 98 254 54 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/2025475 42 106 327 0 0 0 0 0 0 0 0 0
Totale 18.774