Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 10.002
EU - Europa 6.547
AS - Asia 2.498
SA - Sud America 30
AF - Africa 27
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 9
Totale 19.128
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Nazione #
US - Stati Uniti d'America 9.985
CN - Cina 1.943
GB - Regno Unito 1.630
DK - Danimarca 1.581
SE - Svezia 701
RU - Federazione Russa 681
IT - Italia 539
DE - Germania 470
UA - Ucraina 355
SG - Singapore 250
IE - Irlanda 144
FI - Finlandia 127
VN - Vietnam 108
AL - Albania 101
TR - Turchia 78
NL - Olanda 69
JP - Giappone 36
BE - Belgio 27
BR - Brasile 24
FR - Francia 23
SN - Senegal 23
CZ - Repubblica Ceca 22
IN - India 18
AT - Austria 16
AU - Australia 15
CA - Canada 15
RO - Romania 14
GR - Grecia 13
MD - Moldavia 11
HK - Hong Kong 10
IQ - Iraq 10
IR - Iran 8
ID - Indonesia 7
A2 - ???statistics.table.value.countryCode.A2??? 6
BD - Bangladesh 6
CH - Svizzera 6
NO - Norvegia 6
LB - Libano 4
PK - Pakistan 4
CI - Costa d'Avorio 3
EU - Europa 3
MY - Malesia 3
PT - Portogallo 3
KR - Corea 2
LK - Sri Lanka 2
NP - Nepal 2
PL - Polonia 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
BO - Bolivia 1
CL - Cile 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EE - Estonia 1
HR - Croazia 1
IL - Israele 1
JO - Giordania 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
LV - Lettonia 1
MA - Marocco 1
MK - Macedonia 1
MX - Messico 1
PE - Perù 1
PY - Paraguay 1
RS - Serbia 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 19.128
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Città #
Fairfield 1.576
Southend 1.460
Woodbridge 1.091
Wilmington 781
Ashburn 773
Chandler 770
Houston 668
Seattle 636
Ann Arbor 593
Cambridge 516
Nanjing 359
Boardman 337
Jacksonville 265
Dearborn 256
Princeton 206
Rome 202
Singapore 179
Beijing 177
Jinan 151
Shenyang 136
Nanchang 135
Dublin 132
Plano 110
Dong Ket 108
Hebei 108
New York 100
Redwood City 93
San Diego 93
San Mateo 93
Tianjin 91
Shanghai 85
Izmir 78
Changsha 63
Kunming 55
Bremen 50
Moscow 49
Hangzhou 47
Amsterdam 46
Eitensheim 46
Guangzhou 46
Jiaxing 46
Zhengzhou 42
Altamura 41
Taizhou 36
Helsinki 35
Redmond 35
Ningbo 34
Tokyo 34
Haikou 33
London 33
San Paolo di Civitate 32
Hefei 29
Brussels 27
Venezia 27
Florence 26
Orange 24
Dakar 23
Milan 23
Brno 22
Munich 22
Fuzhou 21
Bari 20
Cornaredo 18
Taiyuan 17
Dallas 16
Lanzhou 16
Washington 16
Norwalk 12
Dresden 11
Pune 11
Chisinau 10
Hong Kong 10
Menlo Park 10
San Francisco 10
Augusta 9
Kilburn 9
Los Angeles 9
Alameda 8
Changchun 8
Chiswick 8
Columbus 8
Genzano di Roma 8
Stevenage 8
Westminster 8
Auburn Hills 7
Falls Church 7
Jakarta 7
Lawrence 7
Mountain View 7
Vienna 7
Baghdad 6
Baotou 6
Berlin 6
Buffalo 6
Flushing 6
Indiana 6
North York 6
Wuhan 6
Serra 5
Atlanta 4
Totale 13.764
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 311
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 245
2DEG based on strained Si on SGOI substrate 227
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 222
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 222
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 220
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 216
SiGe intermixing in Ge/Si(100) islands 208
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 208
Epi-cleaning of Ge/GeSn heterostructures 206
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 197
2DEG based on strained Si on SGOI substrate 197
2DEG based on strained Si on SGOI substrate 194
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 194
Ordering self-assembled islands without substrate patterning 192
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 192
Early stage of CVD graphene synthesis on Ge(001) substrate 191
Germanium quantum fountain structures on silicon substrates 190
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 188
Conduction band intersubband transitions in Ge/SiGe quantum wells 187
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 186
Strain relaxation in high Ge content SiGe layers deposited on Si 184
Ordered growth of Ge island clusters on strain-engineered Si surfaces 183
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 181
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 181
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 180
Influence of the growth parameters on self-assembled Ge islands on Si(100) 179
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 178
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 178
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 177
Commensurability and stability in nonperiodic systems 177
Evolution of Ge/Si(001) islands during Si capping at high temperature 175
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 175
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 174
Spontaneous Ge island ordering promoted by partial silicon capping 173
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 173
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 173
Intermixing-promoted scaling of Ge/Si(100) island sizes 172
Self-ordering of a Ge island single layer induced by Si overgrowth 172
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 171
Spontaneous Ge island ordering promoted by partial silicon capping 170
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 169
Ge-Si intermixing in Ge quantum dots on Si 169
Surface phase transitions of Ge(100) studied via valence band photoemission 168
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 168
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 167
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 165
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 165
Strain relief mechanisms in Ge/Si(100) islands 165
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 163
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 163
Ge/Si(100) islands: Growth dynamics versus growth rate 162
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 162
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 162
Formation of extended thermal etch pits on annealed Ge wafers 161
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 161
Ge/Si(100) islands: growth dynamics versus growth rate 160
Relaxed state of GexSi1-x islands embedded in Si 158
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 158
Driving with temperature the synthesis of graphene on Ge(110) 157
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 156
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 156
N-type SiGe heterostructures for THz intersubband transitions 155
Photoemission of Ge(110) at room and high temperature 155
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 151
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 151
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 150
Evolution of Ge/Si(001) islands during Si capping at high temperature 150
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 149
Evolution of Ge/Si(001) islands during Si capping at high temperature 149
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 149
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 148
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 148
On the role of specimen thickness in the chemistry quantification by HAADF 147
Growth of thin C-60 films on hydrogenated Si(100) surfaces 147
Spontaneous ordering of self-assembled-Ge island 145
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 144
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 143
Photoluminescence from GeSn nano-heterostructures 143
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 143
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 143
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 142
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 142
Strain relaxation in high Ge content SiGe layers deposited on Si 141
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 139
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 139
Symmetry transformation of the three-dimensional vortex system induced by two-dimensional square pinning potentials 135
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 135
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 130
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 129
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 128
Spontaneous ordering of self-assembled Ge island 127
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 127
Plastic and elastic symmetry transformations in the vortex lattice 126
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 126
Interaction of C-60 with Ge(111) in the 3 root 3X3 root R30 degrees phase: A (2X2) model 125
The electronic structure of the 3 root 3 x 3 root 3R30 degrees-C-60/Ge(111) system as measured by angle-resolved photoemission 125
SiC formation on Si(100) via C-60 precursors 124
Strain relief mechanism in Ge/Si(100) islands 124
Direct evidence of C-60 chemical bonding on Si(100) 124
Totale 16.632
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Categoria #
all - tutte 63.949
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 63.949
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.251 0 0 0 0 0 0 616 511 693 169 149 113
2020/20212.964 119 176 268 191 309 286 325 319 318 264 154 235
2021/20221.713 98 254 54 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/20251.283 42 106 353 50 38 188 506 0 0 0 0 0
Totale 19.582