Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DE SETA, Monica
 Distribuzione geografica
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Continente #
NA - Nord America 13.535
EU - Europa 8.232
AS - Asia 6.583
SA - Sud America 573
Continente sconosciuto - Info sul continente non disponibili 474
AF - Africa 135
OC - Oceania 20
Totale 29.552
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Nazione #
US - Stati Uniti d'America 13.335
CN - Cina 2.913
SG - Singapore 1.917
GB - Regno Unito 1.720
RU - Federazione Russa 1.647
DK - Danimarca 1.582
VN - Vietnam 882
IT - Italia 739
SE - Svezia 719
DE - Germania 637
BR - Brasile 411
UA - Ucraina 363
IE - Irlanda 150
FI - Finlandia 141
HK - Hong Kong 135
TR - Turchia 117
AL - Albania 111
NL - Olanda 111
BD - Bangladesh 104
CA - Canada 101
IN - India 94
FR - Francia 75
JP - Giappone 74
AR - Argentina 49
KR - Corea 47
IQ - Iraq 46
ID - Indonesia 37
MX - Messico 37
ZA - Sudafrica 32
BE - Belgio 31
PL - Polonia 31
CZ - Repubblica Ceca 28
AT - Austria 27
CO - Colombia 27
PH - Filippine 26
SN - Senegal 26
EC - Ecuador 25
PK - Pakistan 24
ES - Italia 23
AU - Australia 19
MA - Marocco 19
TH - Thailandia 19
SA - Arabia Saudita 18
VE - Venezuela 18
GR - Grecia 15
RO - Romania 15
MD - Moldavia 14
CL - Cile 13
KE - Kenya 13
MY - Malesia 12
TN - Tunisia 12
TW - Taiwan 12
CR - Costa Rica 11
JO - Giordania 11
LB - Libano 11
PY - Paraguay 11
UZ - Uzbekistan 10
JM - Giamaica 9
AE - Emirati Arabi Uniti 8
CH - Svizzera 8
EG - Egitto 8
IR - Iran 8
LT - Lituania 8
NI - Nicaragua 8
OM - Oman 8
A2 - ???statistics.table.value.countryCode.A2??? 6
AZ - Azerbaigian 6
BO - Bolivia 6
GT - Guatemala 6
NO - Norvegia 6
PE - Perù 6
UY - Uruguay 6
IL - Israele 5
KW - Kuwait 5
NP - Nepal 5
PT - Portogallo 5
SI - Slovenia 5
TT - Trinidad e Tobago 5
DO - Repubblica Dominicana 4
DZ - Algeria 4
EE - Estonia 4
ET - Etiopia 4
HN - Honduras 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LK - Sri Lanka 4
PS - Palestinian Territory 4
RS - Serbia 4
AM - Armenia 3
CI - Costa d'Avorio 3
EU - Europa 3
LV - Lettonia 3
NG - Nigeria 3
PA - Panama 3
PR - Porto Rico 3
BY - Bielorussia 2
DM - Dominica 2
GA - Gabon 2
KH - Cambogia 2
MM - Myanmar 2
Totale 29.055
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Città #
Fairfield 1.576
Southend 1.460
Ashburn 1.377
Woodbridge 1.091
Singapore 1.049
Wilmington 782
Chandler 770
Houston 681
San Jose 678
Seattle 656
Ann Arbor 593
Cambridge 519
Beijing 401
Nanjing 359
Boardman 337
Rome 269
Jacksonville 268
Dearborn 256
Dallas 233
Ho Chi Minh City 232
Hefei 224
New York 223
Princeton 210
Hanoi 180
Jinan 153
Los Angeles 148
Shenyang 139
Dublin 138
Council Bluffs 135
Nanchang 135
Hong Kong 123
Moscow 121
Plano 110
Dong Ket 108
Hebei 108
Tianjin 100
San Diego 96
Redwood City 93
San Mateo 93
Shanghai 91
Munich 86
The Dalles 82
Izmir 81
Changsha 72
Frankfurt am Main 66
Amsterdam 62
Tokyo 62
Guangzhou 55
Kunming 55
São Paulo 54
London 53
Da Nang 51
Bremen 50
Hangzhou 49
Zhengzhou 48
Milan 47
Eitensheim 46
Jiaxing 46
Helsinki 44
Santa Clara 44
Orem 43
Altamura 41
Seoul 41
Chicago 39
Taizhou 38
Redmond 35
Montreal 34
Ningbo 34
Haikou 33
San Paolo di Civitate 32
Florence 31
Brussels 30
Haiphong 30
Venezia 27
Warsaw 27
Washington 27
Dakar 26
Phoenix 26
Bari 25
Atlanta 24
Fuzhou 24
Orange 24
Baghdad 23
Brno 23
Brooklyn 22
Buffalo 21
Chennai 21
Toronto 20
Columbus 19
Johannesburg 19
San Francisco 19
Taiyuan 19
Cornaredo 18
Manchester 18
Boston 16
Lanzhou 16
Stockholm 16
Can Tho 15
Denver 15
Ankara 14
Totale 18.493
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 369
2DEG based on strained Si on SGOI substrate 322
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 322
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 311
2DEG based on strained Si on SGOI substrate 302
Early stage of CVD graphene synthesis on Ge(001) substrate 298
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 297
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 296
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 295
2DEG based on strained Si on SGOI substrate 284
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 284
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 284
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 282
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7) 281
Surface phase transitions of Ge(100) from temperature-dependent valence-band photoemission 280
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 275
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 272
SiGe intermixing in Ge/Si(100) islands 271
Conduction band intersubband transitions in Ge/SiGe quantum wells 271
Epi-cleaning of Ge/GeSn heterostructures 270
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 266
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 266
Commensurability and stability in nonperiodic systems 258
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 257
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures 256
Ordering self-assembled islands without substrate patterning 253
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 253
Driving with temperature the synthesis of graphene on Ge(110) 253
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 249
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 246
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 243
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 243
Evolution of Ge/Si(001) islands during Si capping at high temperature 241
Ordered growth of Ge island clusters on strain-engineered Si surfaces 240
Germanium quantum fountain structures on silicon substrates 239
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 236
Strain relaxation in high Ge content SiGe layers deposited on Si 235
Influence of the growth parameters on self-assembled Ge islands on Si(100) 235
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 235
Island and wetting-layer intermixing in the Ge/Si(001) system upon capping 233
Growth of thin C-60 films on hydrogenated Si(100) surfaces 232
Intermixing-promoted scaling of Ge/Si(100) island sizes 232
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 231
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 231
Ge/Si(100) islands: growth dynamics versus growth rate 230
Photoluminescence from GeSn nano-heterostructures 230
Ge-Si intermixing in Ge quantum dots on Si 229
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 228
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 228
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 226
Spontaneous Ge island ordering promoted by partial silicon capping 225
Spontaneous Ge island ordering promoted by partial silicon capping 224
Self-ordering of a Ge island single layer induced by Si overgrowth 224
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 222
Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments 221
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 220
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 220
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 218
Surface phase transitions of Ge(100) studied via valence band photoemission 217
Strain relief mechanisms in Ge/Si(100) islands 217
Ge/Si(100) islands: Growth dynamics versus growth rate 216
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 216
Photoemission of Ge(110) at room and high temperature 216
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 215
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 215
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY 214
Relaxed state of GexSi1-x islands embedded in Si 214
INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 214
Electron-phonon coupling in n-type Ge two-dimensional systems 214
N-type SiGe heterostructures for THz intersubband transitions 213
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 212
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition 211
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 210
ELECTRONIC STATES OF ALKALI-METAL-DOPED C-60 PHASES 210
Formation of extended thermal etch pits on annealed Ge wafers 208
Imaging the structure of the interface between symmetries interconnected by a discontinuous transition 206
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 206
Evolution of Ge/Si(001) islands during Si capping at high temperature 205
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 204
Evolution of Ge/Si(001) islands during Si capping at high temperature 203
NATURE OF VALENCE STATES OF A-SI1-XCX-H ALLOYS IN THE LOW-CARBON CONCENTRATION LIMIT 202
Plasma-assisted chemical vapor deposition growth of SiC on Si(100): Morphology and electronic structure 202
Plastic and elastic symmetry transformations in the vortex lattice 201
Strain relaxation in high Ge content SiGe layers deposited on Si 201
ELECTRONIC STATES AT THE FERMI-LEVEL OF DOPED C-60 200
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES 199
LUMO BAND OF K-DOPED C-60 SINGLE PHASES - A PHOTOEMISSION AND YIELD-SPECTROSCOPY STUDY 199
Plastic and elastic symmetry transformations induced in the vortex lattice of anisotropic and layered superconductors 196
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 195
ELECTRONIC-STRUCTURE OF A-SI1-XCX-H ALLOYS 194
Spontaneous ordering of self-assembled-Ge island 193
AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION 192
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 192
On the role of specimen thickness in the chemistry quantification by HAADF 191
Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells 190
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 190
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 188
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 187
QUANTUM EFFECTS IN AMORPHOUS SUPERSTRUCTURES 185
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 185
Totale 23.412
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Categoria #
all - tutte 99.678
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 99.678
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.307 0 0 0 45 257 58 289 65 112 53 119 309
2022/20232.177 255 367 132 317 141 455 2 172 223 16 52 45
2023/20241.044 73 63 115 34 58 201 77 137 23 63 23 177
2024/20253.292 42 106 353 50 38 188 1.177 475 223 151 190 299
2025/20266.516 462 777 315 726 685 423 1.047 313 635 839 163 131
2026/20271.445 159 123 673 490 0 0 0 0 0 0 0 0
Totale 29.552