Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DI GASPARE, LUCIANA
 Distribuzione geografica
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Continente #
NA - Nord America 11.492
EU - Europa 6.437
AS - Asia 5.451
SA - Sud America 479
Continente sconosciuto - Info sul continente non disponibili 390
AF - Africa 118
OC - Oceania 14
Totale 24.381
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Nazione #
US - Stati Uniti d'America 11.168
CN - Cina 2.625
SG - Singapore 1.507
RU - Federazione Russa 1.411
GB - Regno Unito 1.250
DK - Danimarca 1.145
IT - Italia 677
VN - Vietnam 606
DE - Germania 561
SE - Svezia 489
BR - Brasile 353
UA - Ucraina 261
CA - Canada 187
FI - Finlandia 111
IE - Irlanda 107
BD - Bangladesh 100
IN - India 95
AL - Albania 83
NL - Olanda 78
HK - Hong Kong 76
TR - Turchia 66
JP - Giappone 60
FR - Francia 59
IQ - Iraq 39
AR - Argentina 37
KR - Corea 33
MX - Messico 32
ID - Indonesia 30
IL - Israele 29
PL - Polonia 28
BE - Belgio 26
CO - Colombia 26
PH - Filippine 26
SN - Senegal 26
CZ - Repubblica Ceca 25
ZA - Sudafrica 25
PK - Pakistan 22
SA - Arabia Saudita 22
AT - Austria 20
ES - Italia 20
CR - Costa Rica 18
EC - Ecuador 18
TT - Trinidad e Tobago 17
VE - Venezuela 17
IR - Iran 15
SC - Seychelles 15
AU - Australia 13
CL - Cile 12
MA - Marocco 12
GR - Grecia 11
GT - Guatemala 11
HN - Honduras 10
JM - Giamaica 10
LT - Lituania 10
MY - Malesia 10
TH - Thailandia 10
KE - Kenya 9
LB - Libano 9
MD - Moldavia 9
RO - Romania 9
CI - Costa d'Avorio 8
PR - Porto Rico 8
PY - Paraguay 8
UZ - Uzbekistan 8
A2 - ???statistics.table.value.countryCode.A2??? 7
CH - Svizzera 7
JO - Giordania 7
CW - ???statistics.table.value.countryCode.CW??? 6
GP - Guadalupe 6
KZ - Kazakistan 6
NP - Nepal 6
TW - Taiwan 6
NI - Nicaragua 5
NO - Norvegia 5
OM - Oman 5
PT - Portogallo 5
SI - Slovenia 5
SV - El Salvador 5
TN - Tunisia 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
DO - Repubblica Dominicana 4
EU - Europa 4
GE - Georgia 4
KW - Kuwait 4
LV - Lettonia 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
BB - Barbados 3
BO - Bolivia 3
EE - Estonia 3
EG - Egitto 3
ET - Etiopia 3
LK - Sri Lanka 3
MK - Macedonia 3
PA - Panama 3
UY - Uruguay 3
AG - Antigua e Barbuda 2
AM - Armenia 2
DM - Dominica 2
Totale 23.973
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Città #
Ashburn 1.277
Fairfield 1.194
Southend 1.044
Woodbridge 953
Singapore 802
Chandler 601
San Jose 579
Wilmington 567
Ann Arbor 518
Seattle 501
Houston 497
Cambridge 401
Beijing 344
New York 302
Nanjing 301
Boardman 263
Rome 243
Dallas 219
Dearborn 210
Jacksonville 180
Hefei 163
Jinan 160
Ho Chi Minh City 159
Princeton 156
Council Bluffs 143
Shanghai 142
Shenyang 137
Los Angeles 122
Moscow 113
Hanoi 111
Dublin 102
Bremen 100
Nanchang 96
Dong Ket 94
Plano 87
Hebei 78
Redwood City 75
Tianjin 73
San Diego 70
The Dalles 70
San Mateo 69
Munich 68
Hong Kong 67
Hangzhou 63
Washington 63
Changsha 60
Zhengzhou 55
São Paulo 52
Jiaxing 50
Frankfurt am Main 48
London 47
Tokyo 46
Guangzhou 45
Helsinki 45
Montreal 43
Santa Clara 43
Amsterdam 41
Ningbo 41
Orem 41
Kunming 40
Altamura 34
Chicago 34
Haikou 33
Izmir 33
Milan 33
Redmond 32
Florence 31
Seoul 29
Haiphong 28
Atlanta 27
Eitensheim 27
Taizhou 27
Da Nang 26
Dakar 26
Brussels 24
Augusta 23
Brooklyn 22
Fuzhou 22
Phoenix 21
Columbus 20
Lanzhou 20
San Paolo di Civitate 20
Toronto 20
Warsaw 20
Brno 18
Buffalo 18
Chennai 18
Cornaredo 18
Denver 18
Taiyuan 17
Baghdad 16
Norwalk 15
Johannesburg 14
Manchester 14
North Bergen 14
Orange 12
Queens 12
Ankara 11
Bari 11
Charlotte 11
Totale 15.143
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 375
2DEG based on strained Si on SGOI substrate 329
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 328
2DEG based on strained Si on SGOI substrate 313
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 305
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 304
Early stage of CVD graphene synthesis on Ge(001) substrate 303
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 302
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 302
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells 299
Ballistic transport in strained-Si cavities: experiment and theory 299
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 289
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 288
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 287
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 283
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 278
Epi-cleaning of Ge/GeSn heterostructures 275
A single electron transistor based on Si/SiGe wires 275
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 275
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 274
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts 272
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008 263
Metal-Ge-Si heterostructures for near infrared light detection 262
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 262
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) 257
Driving with temperature the synthesis of graphene on Ge(110) 257
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si 257
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 255
Ion and electron beam deposited masks for pattern transfer by reactive ion etching 254
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 252
Ge/Si (001) Photodetector for Near Infrared Light” 251
Investigation of SiGe-heterostructure nanowires 250
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 248
Germanium quantum fountain structures on silicon substrates 248
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition 247
Zn nanoparticle formation in FIB irradiated single crystal ZnO 246
Evolution of Ge/Si(001) islands during Si capping at high temperature 245
Conductance quantization in etched Si/SiGe quantum point contacts 245
Electronic states of thin epitaxial layers of Ge on Si(100) 241
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 241
Relaxed state of GexSi1-x islands embedded in Si 240
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) 240
Ge-Si intermixing in Ge quantum dots on Si 237
Photoluminescence from GeSn nano-heterostructures 237
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 237
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 237
Conductance anomalies in quantum point contacts 236
Single Electron Transistor based on modulation-doped SiGe heterostructures 233
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies 231
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) 224
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 224
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si 223
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 223
Electron thermometry and refrigeration with doped silicon and superconducting electrodes 221
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 221
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 220
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition 220
Ion and plasma based treatments for enhanced chemical speciation of metals in ferritin 220
Electron-phonon coupling in n-type Ge two-dimensional systems 218
Formation of extended thermal etch pits on annealed Ge wafers 212
Field-induced tunneling in SiGe wires 212
Evolution of Ge/Si(001) islands during Si capping at high temperature 211
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation 211
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 211
Towards substrate removal in quasi-optical Schottky detector arrays 210
Defects in SiGe virtual substrate for high mobility electron gas 206
Low temperature sputtered ITO on glass and epoxy resin substrates:influence of process parameters and substrate roughness on morphologicaland electrical properties 205
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 205
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 204
Fisica mesoscopica in eterostrutture Si/SiGe 201
Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates 201
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 197
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure 195
Photoelectric yield studies of c-Si/a-Si:H interfaces 194
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 194
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 194
Quantum transport in low-dimensional AlGaN/GaN systems 192
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 192
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 191
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 191
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 189
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure 188
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 186
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 182
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 180
Dynamics of crosshatch patterns in heteroepitaxy 180
Si/SiGe modulation-doped heterostructures grown on Silicon-On-Insulator substrates for high mobility two dimensional gases 179
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 176
Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells 176
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction 173
Strain relaxation by pit formation in SiGe alloy films grown on Si(001) 172
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors 170
The photoelectric yield technique for the characterization of the semiconductor interfaces 168
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures 162
Ultrastrong Coupling of Si1−xGex Parabolic Quantum Wells toTerahertz Microcavities 160
Low field magnetotransport in strained Si-cavities 158
Femtosecond laser and reactive ion etching based treatments for nanoscale surface texturing of porous silicon carbide 158
Strain driven photoluminescence properties of Ge quantum dots on strained and relaxed multi-layered islands on Si(001) 155
THz Intersubband Emitter based on Silicon 151
Doped silicon and NIS junctions for bolometer applications RID F-6186-2010 150
Totale 23.020
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Categoria #
all - tutte 81.469
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.469
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022952 0 0 0 0 190 31 214 62 78 38 93 246
2022/20231.779 211 309 117 300 129 323 2 134 157 12 50 35
2023/20241.231 36 56 117 34 80 422 78 185 24 38 18 143
2024/20252.764 26 72 321 45 37 161 1.043 385 169 123 155 227
2025/20265.284 438 621 261 596 568 422 753 264 532 589 142 98
2026/20271.772 117 89 514 666 386 0 0 0 0 0 0 0
Totale 24.381