Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DI GASPARE, LUCIANA
 Distribuzione geografica
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Continente #
NA - Nord America 7.824
EU - Europa 4.337
AS - Asia 2.049
AF - Africa 29
Continente sconosciuto - Info sul continente non disponibili 11
OC - Oceania 11
SA - Sud America 2
Totale 14.263
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Nazione #
US - Stati Uniti d'America 7.812
CN - Cina 1.754
GB - Regno Unito 1.174
DK - Danimarca 1.144
SE - Svezia 477
DE - Germania 408
IT - Italia 391
UA - Ucraina 248
IE - Irlanda 101
FI - Finlandia 94
VN - Vietnam 94
SG - Singapore 77
RU - Federazione Russa 76
AL - Albania 74
NL - Olanda 41
TR - Turchia 32
JP - Giappone 30
IN - India 24
SN - Senegal 22
CZ - Repubblica Ceca 19
BE - Belgio 18
IR - Iran 15
FR - Francia 14
CA - Canada 12
AU - Australia 11
GR - Grecia 11
AT - Austria 10
RO - Romania 9
A2 - ???statistics.table.value.countryCode.A2??? 7
CI - Costa d'Avorio 7
CH - Svizzera 6
BD - Bangladesh 5
IQ - Iraq 5
NO - Norvegia 5
EU - Europa 4
LB - Libano 4
MD - Moldavia 4
PT - Portogallo 3
SA - Arabia Saudita 3
SK - Slovacchia (Repubblica Slovacca) 3
MK - Macedonia 2
PL - Polonia 2
AR - Argentina 1
BR - Brasile 1
ES - Italia 1
IL - Israele 1
KR - Corea 1
LU - Lussemburgo 1
LV - Lettonia 1
MY - Malesia 1
NP - Nepal 1
PH - Filippine 1
TW - Taiwan 1
Totale 14.263
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Città #
Fairfield 1.194
Southend 1.044
Woodbridge 953
Ashburn 716
Chandler 601
Wilmington 566
Ann Arbor 518
Houston 483
Seattle 480
Cambridge 397
Nanjing 301
Dearborn 210
New York 202
Jacksonville 175
Beijing 164
Jinan 158
Princeton 153
Rome 147
Shanghai 139
Shenyang 133
Bremen 99
Dublin 96
Nanchang 96
Dong Ket 94
Plano 87
Hebei 78
Redwood City 75
Tianjin 70
San Mateo 69
San Diego 67
Boardman 63
Hangzhou 59
Changsha 55
Washington 53
Jiaxing 50
Singapore 49
Zhengzhou 49
Ningbo 41
Kunming 40
Guangzhou 39
Altamura 34
Haikou 33
Izmir 32
Redmond 32
Helsinki 31
Amsterdam 28
London 28
Eitensheim 27
Taizhou 27
Florence 26
Tokyo 26
Dakar 22
Hefei 22
Augusta 20
Fuzhou 20
Lanzhou 20
San Paolo di Civitate 20
Brno 18
Cornaredo 18
Brussels 16
Taiyuan 15
Dallas 14
Norwalk 14
Orange 12
Dresden 11
Pune 11
Stevenage 10
Buffalo 9
Genzano di Roma 8
Kilburn 8
Columbus 7
Mountain View 7
Munich 7
Berlin 6
Chicago 6
Menlo Park 6
Alameda 5
Auburn Hills 5
Bari 5
Chiswick 5
Chongqing 5
Edinburgh 5
Falls Church 5
Vienna 5
Baghdad 4
Changchun 4
Chisinau 4
Formia 4
Fort Worth 4
Frankfurt An Der Oder 4
Marnate 4
Nanning 4
North York 4
Serra 4
Toronto 4
Venezia 4
Wandsworth 4
Westminster 4
Ardabil 3
Cologne 3
Totale 10.816
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 306
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 219
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 214
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 212
2DEG based on strained Si on SGOI substrate 210
Ballistic transport in strained-Si cavities: experiment and theory 207
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 206
Epi-cleaning of Ge/GeSn heterostructures 203
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 199
Metal-Ge-Si heterostructures for near infrared light detection 193
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 191
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) 189
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts 186
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) 186
Germanium quantum fountain structures on silicon substrates 185
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si 185
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells 184
Ge/Si (001) Photodetector for Near Infrared Light” 184
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 184
2DEG based on strained Si on SGOI substrate 181
A single electron transistor based on Si/SiGe wires 180
Relaxed state of GexSi1-x islands embedded in Si 180
Early stage of CVD graphene synthesis on Ge(001) substrate 179
Investigation of SiGe-heterostructure nanowires 178
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 177
Ge-Si intermixing in Ge quantum dots on Si 175
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition 174
Single Electron Transistor based on modulation-doped SiGe heterostructures 172
Electronic states of thin epitaxial layers of Ge on Si(100) 172
Evolution of Ge/Si(001) islands during Si capping at high temperature 171
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies 171
Ion and electron beam deposited masks for pattern transfer by reactive ion etching 171
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si 170
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 169
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 169
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 169
Ion and plasma based treatments for enhanced chemical speciation of metals in ferritin 168
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 167
Zn nanoparticle formation in FIB irradiated single crystal ZnO 166
Electron thermometry and refrigeration with doped silicon and superconducting electrodes 162
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation 159
Towards substrate removal in quasi-optical Schottky detector arrays 159
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008 157
Formation of extended thermal etch pits on annealed Ge wafers 157
Field-induced tunneling in SiGe wires 157
Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates 156
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 155
Photoelectric yield studies of c-Si/a-Si:H interfaces 154
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) 153
Conductance quantization in etched Si/SiGe quantum point contacts 151
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition 149
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 149
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 145
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 145
Evolution of Ge/Si(001) islands during Si capping at high temperature 144
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 144
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 144
Driving with temperature the synthesis of graphene on Ge(110) 142
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure 140
Quantum transport in low-dimensional AlGaN/GaN systems 140
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 139
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 138
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 137
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure 135
Conductance anomalies in quantum point contacts 131
Photoluminescence from GeSn nano-heterostructures 128
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 125
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 124
Si/SiGe modulation-doped heterostructures grown on Silicon-On-Insulator substrates for high mobility two dimensional gases 122
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 122
Defects in SiGe virtual substrate for high mobility electron gas 121
Fisica mesoscopica in eterostrutture Si/SiGe 120
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 119
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 117
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors 116
Strain relaxation by pit formation in SiGe alloy films grown on Si(001) 113
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 113
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 110
Dynamics of crosshatch patterns in heteroepitaxy 110
Low temperature sputtered ITO on glass and epoxy resin substrates:influence of process parameters and substrate roughness on morphologicaland electrical properties 109
The photoelectric yield technique for the characterization of the semiconductor interfaces 108
Doped silicon and NIS junctions for bolometer applications RID F-6186-2010 107
Strain driven photoluminescence properties of Ge quantum dots on strained and relaxed multi-layered islands on Si(001) 106
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 106
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction 100
Femtosecond laser and reactive ion etching based treatments for nanoscale surface texturing of porous silicon carbide 98
Electron-phonon coupling in n-type Ge two-dimensional systems 96
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 95
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 87
Low field magnetotransport in strained Si-cavities 86
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 84
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 83
Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading 73
Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells 73
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 71
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 67
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 54
Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing 48
THz Intersubband Emitter based on Silicon 46
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures 33
Totale 14.534
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Categoria #
all - tutte 43.770
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.770
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.229 0 297 157 367 325 331 475 343 600 130 115 89
2020/20212.208 88 129 208 130 216 158 236 238 261 203 163 178
2021/20221.282 80 159 56 35 190 31 214 62 78 38 93 246
2022/20231.779 211 309 117 300 129 323 2 134 157 12 50 35
2023/20241.231 36 56 117 34 80 422 78 185 24 38 18 143
2024/202557 26 31 0 0 0 0 0 0 0 0 0 0
Totale 14.618