Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DI GASPARE, LUCIANA
 Distribuzione geografica
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Continente #
NA - Nord America 9.921
EU - Europa 6.204
AS - Asia 5.328
SA - Sud America 432
AF - Africa 103
OC - Oceania 14
Continente sconosciuto - Info sul continente non disponibili 11
Totale 22.013
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Nazione #
US - Stati Uniti d'America 9.809
CN - Cina 2.618
SG - Singapore 1.503
RU - Federazione Russa 1.380
GB - Regno Unito 1.235
DK - Danimarca 1.144
VN - Vietnam 600
DE - Germania 556
IT - Italia 524
SE - Svezia 488
BR - Brasile 328
UA - Ucraina 256
FI - Finlandia 110
IE - Irlanda 107
IN - India 91
AL - Albania 83
HK - Hong Kong 75
NL - Olanda 75
CA - Canada 63
TR - Turchia 62
FR - Francia 56
JP - Giappone 56
BD - Bangladesh 46
IQ - Iraq 39
AR - Argentina 33
KR - Corea 33
ID - Indonesia 28
MX - Messico 28
PL - Polonia 27
BE - Belgio 26
SN - Senegal 26
PH - Filippine 25
ZA - Sudafrica 25
CZ - Repubblica Ceca 23
SA - Arabia Saudita 22
AT - Austria 20
CO - Colombia 20
PK - Pakistan 19
ES - Italia 17
IR - Iran 15
VE - Venezuela 14
AU - Australia 13
CL - Cile 12
MA - Marocco 12
GR - Grecia 11
TH - Thailandia 10
EC - Ecuador 9
KE - Kenya 9
LT - Lituania 9
RO - Romania 9
CI - Costa d'Avorio 8
LB - Libano 8
MD - Moldavia 8
PY - Paraguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
CH - Svizzera 7
JO - Giordania 7
MY - Malesia 7
UZ - Uzbekistan 7
IL - Israele 6
NP - Nepal 6
TW - Taiwan 6
NO - Norvegia 5
OM - Oman 5
TN - Tunisia 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
DO - Repubblica Dominicana 4
EU - Europa 4
GE - Georgia 4
JM - Giamaica 4
KW - Kuwait 4
LV - Lettonia 4
SK - Slovacchia (Repubblica Slovacca) 4
BO - Bolivia 3
CR - Costa Rica 3
EE - Estonia 3
EG - Egitto 3
ET - Etiopia 3
LK - Sri Lanka 3
PA - Panama 3
PT - Portogallo 3
RS - Serbia 3
UY - Uruguay 3
AM - Armenia 2
DZ - Algeria 2
GA - Gabon 2
GY - Guiana 2
KH - Cambogia 2
KZ - Kazakistan 2
MK - Macedonia 2
NG - Nigeria 2
PS - Palestinian Territory 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
Totale 21.993
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Città #
Fairfield 1.194
Ashburn 1.078
Southend 1.044
Woodbridge 953
Singapore 801
Chandler 601
Wilmington 567
Ann Arbor 518
Houston 491
Seattle 486
San Jose 419
Cambridge 397
Beijing 343
Nanjing 301
Boardman 263
New York 248
Dearborn 210
Rome 206
Dallas 204
Jacksonville 177
Hefei 163
Jinan 160
Ho Chi Minh City 158
Princeton 153
Shanghai 142
Shenyang 137
Moscow 113
Hanoi 110
Dublin 102
Bremen 100
Nanchang 96
Dong Ket 94
Plano 87
Hebei 78
Redwood City 75
Tianjin 73
The Dalles 70
San Mateo 69
Munich 68
San Diego 67
Hong Kong 66
Los Angeles 64
Hangzhou 63
Changsha 60
Zhengzhou 55
Washington 53
Jiaxing 50
Frankfurt am Main 47
Tokyo 46
Guangzhou 45
London 45
Helsinki 44
São Paulo 44
Ningbo 41
Orem 41
Amsterdam 40
Kunming 40
Altamura 34
Haikou 33
Izmir 33
Redmond 32
Seoul 29
Haiphong 28
Eitensheim 27
Taizhou 27
Da Nang 26
Dakar 26
Florence 26
Chicago 25
Brussels 24
Augusta 23
Santa Clara 23
Fuzhou 22
Lanzhou 20
Montreal 20
San Paolo di Civitate 20
Warsaw 20
Brno 18
Chennai 18
Cornaredo 18
Atlanta 17
Phoenix 17
Taiyuan 17
Baghdad 16
Columbus 16
Brooklyn 15
Denver 15
Johannesburg 14
Manchester 14
Norwalk 14
Toronto 13
Council Bluffs 12
Milan 12
Orange 12
Ankara 11
Dresden 11
Düsseldorf 11
Jeddah 11
Poplar 11
Pune 11
Totale 14.302
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 361
2DEG based on strained Si on SGOI substrate 312
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 311
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 290
2DEG based on strained Si on SGOI substrate 290
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 286
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells 285
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 285
Ballistic transport in strained-Si cavities: experiment and theory 284
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 282
Early stage of CVD graphene synthesis on Ge(001) substrate 279
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 274
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 270
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 269
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 268
Epi-cleaning of Ge/GeSn heterostructures 262
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 262
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts 262
A single electron transistor based on Si/SiGe wires 258
Metal-Ge-Si heterostructures for near infrared light detection 251
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 245
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si 245
Driving with temperature the synthesis of graphene on Ge(110) 243
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) 240
Ion and electron beam deposited masks for pattern transfer by reactive ion etching 239
Investigation of SiGe-heterostructure nanowires 238
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 238
Ge/Si (001) Photodetector for Near Infrared Light” 238
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 238
Evolution of Ge/Si(001) islands during Si capping at high temperature 234
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 234
Germanium quantum fountain structures on silicon substrates 234
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) 233
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition 229
Conductance quantization in etched Si/SiGe quantum point contacts 227
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 226
Relaxed state of GexSi1-x islands embedded in Si 225
Electronic states of thin epitaxial layers of Ge on Si(100) 224
Zn nanoparticle formation in FIB irradiated single crystal ZnO 224
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 223
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 221
Single Electron Transistor based on modulation-doped SiGe heterostructures 220
Ge-Si intermixing in Ge quantum dots on Si 220
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 219
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 219
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies 215
Electron thermometry and refrigeration with doped silicon and superconducting electrodes 214
Photoluminescence from GeSn nano-heterostructures 214
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si 210
Conductance anomalies in quantum point contacts 210
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 208
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition 208
Ion and plasma based treatments for enhanced chemical speciation of metals in ferritin 208
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 207
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 207
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008 205
Towards substrate removal in quasi-optical Schottky detector arrays 201
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation 200
Formation of extended thermal etch pits on annealed Ge wafers 199
Field-induced tunneling in SiGe wires 199
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) 197
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 196
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 194
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 192
Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates 192
Defects in SiGe virtual substrate for high mobility electron gas 191
Evolution of Ge/Si(001) islands during Si capping at high temperature 189
Photoelectric yield studies of c-Si/a-Si:H interfaces 189
Electron-phonon coupling in n-type Ge two-dimensional systems 187
Low temperature sputtered ITO on glass and epoxy resin substrates:influence of process parameters and substrate roughness on morphologicaland electrical properties 186
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure 183
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 183
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 182
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 181
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 181
Quantum transport in low-dimensional AlGaN/GaN systems 180
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 178
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 178
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 177
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 177
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure 174
Fisica mesoscopica in eterostrutture Si/SiGe 171
Dynamics of crosshatch patterns in heteroepitaxy 167
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 165
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 164
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 164
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 163
Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells 162
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction 161
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors 158
Si/SiGe modulation-doped heterostructures grown on Silicon-On-Insulator substrates for high mobility two dimensional gases 158
Strain relaxation by pit formation in SiGe alloy films grown on Si(001) 155
The photoelectric yield technique for the characterization of the semiconductor interfaces 148
Low field magnetotransport in strained Si-cavities 146
Femtosecond laser and reactive ion etching based treatments for nanoscale surface texturing of porous silicon carbide 141
Strain driven photoluminescence properties of Ge quantum dots on strained and relaxed multi-layered islands on Si(001) 140
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures 138
Doped silicon and NIS junctions for bolometer applications RID F-6186-2010 138
Ultrastrong Coupling of Si1−xGex Parabolic Quantum Wells toTerahertz Microcavities 131
THz Intersubband Emitter based on Silicon 131
Totale 21.310
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Categoria #
all - tutte 71.561
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 71.561
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021341 0 0 0 0 0 0 0 0 0 0 163 178
2021/20221.282 80 159 56 35 190 31 214 62 78 38 93 246
2022/20231.779 211 309 117 300 129 323 2 134 157 12 50 35
2023/20241.231 36 56 117 34 80 422 78 185 24 38 18 143
2024/20252.764 26 72 321 45 37 161 1.043 385 169 123 155 227
2025/20265.057 438 621 261 596 568 422 753 264 532 589 13 0
Totale 22.382