Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DI GASPARE, LUCIANA
 Distribuzione geografica
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Continente #
NA - Nord America 10.098
EU - Europa 6.242
AS - Asia 5.360
SA - Sud America 439
AF - Africa 103
OC - Oceania 14
Continente sconosciuto - Info sul continente non disponibili 11
Totale 22.267
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Nazione #
US - Stati Uniti d'America 9.979
CN - Cina 2.620
SG - Singapore 1.505
RU - Federazione Russa 1.380
GB - Regno Unito 1.236
DK - Danimarca 1.145
VN - Vietnam 601
DE - Germania 556
IT - Italia 555
SE - Svezia 488
BR - Brasile 332
UA - Ucraina 257
FI - Finlandia 110
IE - Irlanda 107
IN - India 91
AL - Albania 83
HK - Hong Kong 75
NL - Olanda 75
BD - Bangladesh 73
CA - Canada 68
TR - Turchia 62
FR - Francia 57
JP - Giappone 56
IQ - Iraq 39
AR - Argentina 35
KR - Corea 33
ID - Indonesia 28
MX - Messico 28
PL - Polonia 27
BE - Belgio 26
SN - Senegal 26
PH - Filippine 25
ZA - Sudafrica 25
CZ - Repubblica Ceca 23
SA - Arabia Saudita 22
CO - Colombia 21
AT - Austria 20
PK - Pakistan 19
ES - Italia 18
IR - Iran 15
VE - Venezuela 14
AU - Australia 13
CL - Cile 12
MA - Marocco 12
GR - Grecia 11
TH - Thailandia 10
EC - Ecuador 9
KE - Kenya 9
LT - Lituania 9
RO - Romania 9
CI - Costa d'Avorio 8
LB - Libano 8
MD - Moldavia 8
PY - Paraguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
CH - Svizzera 7
JO - Giordania 7
MY - Malesia 7
UZ - Uzbekistan 7
IL - Israele 6
NP - Nepal 6
TW - Taiwan 6
NO - Norvegia 5
OM - Oman 5
TN - Tunisia 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
CR - Costa Rica 4
DO - Repubblica Dominicana 4
EU - Europa 4
GE - Georgia 4
JM - Giamaica 4
KW - Kuwait 4
LV - Lettonia 4
PT - Portogallo 4
SK - Slovacchia (Repubblica Slovacca) 4
BO - Bolivia 3
EE - Estonia 3
EG - Egitto 3
ET - Etiopia 3
LK - Sri Lanka 3
MK - Macedonia 3
PA - Panama 3
RS - Serbia 3
UY - Uruguay 3
AM - Armenia 2
DZ - Algeria 2
GA - Gabon 2
GT - Guatemala 2
GY - Guiana 2
KH - Cambogia 2
KZ - Kazakistan 2
NG - Nigeria 2
PS - Palestinian Territory 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
BA - Bosnia-Erzegovina 1
Totale 22.247
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Città #
Fairfield 1.194
Ashburn 1.111
Southend 1.044
Woodbridge 953
Singapore 801
Chandler 601
Wilmington 567
Ann Arbor 518
Houston 491
Seattle 487
San Jose 453
Cambridge 397
Beijing 343
Nanjing 301
Boardman 263
New York 256
Rome 221
Dallas 210
Dearborn 210
Jacksonville 177
Hefei 163
Jinan 160
Ho Chi Minh City 158
Princeton 153
Shanghai 142
Shenyang 137
Moscow 113
Hanoi 110
Dublin 102
Bremen 100
Nanchang 96
Dong Ket 94
Plano 87
Hebei 78
Redwood City 75
Tianjin 73
The Dalles 70
San Mateo 69
Los Angeles 68
Munich 68
San Diego 67
Hong Kong 66
Hangzhou 63
Changsha 60
Zhengzhou 55
Washington 53
Jiaxing 50
Frankfurt am Main 47
London 46
Tokyo 46
Guangzhou 45
Helsinki 44
São Paulo 44
Ningbo 41
Orem 41
Amsterdam 40
Kunming 40
Altamura 34
Haikou 33
Izmir 33
Redmond 32
Seoul 29
Haiphong 28
Eitensheim 27
Taizhou 27
Chicago 26
Da Nang 26
Dakar 26
Florence 26
Santa Clara 26
Brussels 24
Augusta 23
Montreal 23
Fuzhou 22
Lanzhou 20
San Paolo di Civitate 20
Warsaw 20
Atlanta 19
Brno 18
Chennai 18
Cornaredo 18
Phoenix 18
Columbus 17
Taiyuan 17
Baghdad 16
Brooklyn 15
Denver 15
Council Bluffs 14
Johannesburg 14
Manchester 14
Milan 14
Norwalk 14
Toronto 14
Buffalo 13
Orange 12
Ankara 11
Dresden 11
Düsseldorf 11
Jeddah 11
Poplar 11
Totale 14.422
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Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 362
2DEG based on strained Si on SGOI substrate 312
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 312
2DEG based on strained Si on SGOI substrate 292
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 290
Ballistic transport in strained-Si cavities: experiment and theory 287
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells 286
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 286
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 286
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 283
Early stage of CVD graphene synthesis on Ge(001) substrate 282
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 277
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 271
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 270
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 268
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 264
Epi-cleaning of Ge/GeSn heterostructures 263
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts 262
A single electron transistor based on Si/SiGe wires 258
Metal-Ge-Si heterostructures for near infrared light detection 251
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 251
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si 249
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) 244
Driving with temperature the synthesis of graphene on Ge(110) 244
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 242
Investigation of SiGe-heterostructure nanowires 240
Ge/Si (001) Photodetector for Near Infrared Light” 239
Ion and electron beam deposited masks for pattern transfer by reactive ion etching 239
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 238
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 238
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 238
Evolution of Ge/Si(001) islands during Si capping at high temperature 235
Germanium quantum fountain structures on silicon substrates 234
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) 233
Conductance quantization in etched Si/SiGe quantum point contacts 231
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition 230
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 230
Electronic states of thin epitaxial layers of Ge on Si(100) 228
Relaxed state of GexSi1-x islands embedded in Si 227
Zn nanoparticle formation in FIB irradiated single crystal ZnO 227
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008 225
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 225
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 225
Ge-Si intermixing in Ge quantum dots on Si 223
Single Electron Transistor based on modulation-doped SiGe heterostructures 221
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 221
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies 219
Photoluminescence from GeSn nano-heterostructures 217
Electron thermometry and refrigeration with doped silicon and superconducting electrodes 214
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 212
Conductance anomalies in quantum point contacts 211
Ion and plasma based treatments for enhanced chemical speciation of metals in ferritin 211
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si 210
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition 210
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 209
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 209
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation 202
Field-induced tunneling in SiGe wires 202
Towards substrate removal in quasi-optical Schottky detector arrays 202
Formation of extended thermal etch pits on annealed Ge wafers 201
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 199
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) 198
Electron-phonon coupling in n-type Ge two-dimensional systems 196
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 194
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 193
Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates 193
Evolution of Ge/Si(001) islands during Si capping at high temperature 192
Defects in SiGe virtual substrate for high mobility electron gas 191
Photoelectric yield studies of c-Si/a-Si:H interfaces 189
Low temperature sputtered ITO on glass and epoxy resin substrates:influence of process parameters and substrate roughness on morphologicaland electrical properties 187
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 185
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure 184
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 184
Quantum transport in low-dimensional AlGaN/GaN systems 183
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 183
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 182
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 181
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 179
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 179
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 178
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure 175
Fisica mesoscopica in eterostrutture Si/SiGe 173
Dynamics of crosshatch patterns in heteroepitaxy 168
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 167
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 167
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 167
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 166
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction 163
Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells 163
Si/SiGe modulation-doped heterostructures grown on Silicon-On-Insulator substrates for high mobility two dimensional gases 162
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors 158
Strain relaxation by pit formation in SiGe alloy films grown on Si(001) 157
The photoelectric yield technique for the characterization of the semiconductor interfaces 150
Low field magnetotransport in strained Si-cavities 147
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures 144
Femtosecond laser and reactive ion etching based treatments for nanoscale surface texturing of porous silicon carbide 143
Ultrastrong Coupling of Si1−xGex Parabolic Quantum Wells toTerahertz Microcavities 142
Strain driven photoluminescence properties of Ge quantum dots on strained and relaxed multi-layered islands on Si(001) 142
Doped silicon and NIS junctions for bolometer applications RID F-6186-2010 139
THz Intersubband Emitter based on Silicon 133
Totale 21.544
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Categoria #
all - tutte 74.275
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.275
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.282 80 159 56 35 190 31 214 62 78 38 93 246
2022/20231.779 211 309 117 300 129 323 2 134 157 12 50 35
2023/20241.231 36 56 117 34 80 422 78 185 24 38 18 143
2024/20252.764 26 72 321 45 37 161 1.043 385 169 123 155 227
2025/20265.284 438 621 261 596 568 422 753 264 532 589 142 98
2026/202727 27 0 0 0 0 0 0 0 0 0 0 0
Totale 22.636