Benvenuti nell'Anagrafe della Ricerca d'Ateneo

DI GASPARE, LUCIANA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 10.273
EU - Europa 6.292
AS - Asia 5.405
SA - Sud America 463
Continente sconosciuto - Info sul continente non disponibili 383
AF - Africa 103
OC - Oceania 14
Totale 22.933
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 10.144
CN - Cina 2.622
SG - Singapore 1.507
RU - Federazione Russa 1.380
GB - Regno Unito 1.236
DK - Danimarca 1.145
VN - Vietnam 606
IT - Italia 599
DE - Germania 558
SE - Svezia 488
BR - Brasile 341
UA - Ucraina 257
FI - Finlandia 110
IE - Irlanda 107
BD - Bangladesh 99
IN - India 92
AL - Albania 83
HK - Hong Kong 76
NL - Olanda 76
CA - Canada 71
TR - Turchia 64
FR - Francia 57
JP - Giappone 57
IQ - Iraq 39
AR - Argentina 36
KR - Corea 33
ID - Indonesia 30
MX - Messico 30
PL - Polonia 27
BE - Belgio 26
SN - Senegal 26
PH - Filippine 25
ZA - Sudafrica 25
CO - Colombia 24
CZ - Repubblica Ceca 24
SA - Arabia Saudita 22
AT - Austria 20
PK - Pakistan 19
ES - Italia 18
EC - Ecuador 17
VE - Venezuela 17
IR - Iran 15
AU - Australia 13
CL - Cile 12
MA - Marocco 12
GR - Grecia 11
LT - Lituania 10
TH - Thailandia 10
KE - Kenya 9
MY - Malesia 9
RO - Romania 9
CI - Costa d'Avorio 8
LB - Libano 8
MD - Moldavia 8
PY - Paraguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
CH - Svizzera 7
JO - Giordania 7
UZ - Uzbekistan 7
IL - Israele 6
NP - Nepal 6
TW - Taiwan 6
CR - Costa Rica 5
JM - Giamaica 5
NO - Norvegia 5
OM - Oman 5
TN - Tunisia 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
DO - Repubblica Dominicana 4
EU - Europa 4
GE - Georgia 4
KW - Kuwait 4
LV - Lettonia 4
PT - Portogallo 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
BO - Bolivia 3
EE - Estonia 3
EG - Egitto 3
ET - Etiopia 3
LK - Sri Lanka 3
MK - Macedonia 3
PA - Panama 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
AM - Armenia 2
DM - Dominica 2
DZ - Algeria 2
GA - Gabon 2
GT - Guatemala 2
GY - Guiana 2
KH - Cambogia 2
KZ - Kazakistan 2
NG - Nigeria 2
PS - Palestinian Territory 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
Totale 22.539
Salva come PNG Salva come JPEG
Città #
Fairfield 1.194
Ashburn 1.139
Southend 1.044
Woodbridge 953
Singapore 802
Chandler 601
Wilmington 567
Ann Arbor 518
Houston 491
Seattle 487
San Jose 478
Cambridge 399
Beijing 344
Nanjing 301
Boardman 263
New York 260
Rome 230
Dallas 215
Dearborn 210
Jacksonville 178
Hefei 163
Jinan 160
Ho Chi Minh City 159
Princeton 153
Shanghai 142
Shenyang 137
Moscow 113
Hanoi 111
Dublin 102
Bremen 100
Nanchang 96
Dong Ket 94
Plano 87
Hebei 78
Redwood City 75
Tianjin 73
Los Angeles 71
The Dalles 70
San Mateo 69
Munich 68
Hong Kong 67
San Diego 67
Hangzhou 63
Changsha 60
Zhengzhou 55
Washington 53
Jiaxing 50
Frankfurt am Main 47
São Paulo 47
London 46
Tokyo 46
Guangzhou 45
Helsinki 44
Ningbo 41
Orem 41
Amsterdam 40
Kunming 40
Santa Clara 37
Altamura 34
Haikou 33
Izmir 33
Redmond 32
Chicago 30
Seoul 29
Haiphong 28
Eitensheim 27
Florence 27
Taizhou 27
Da Nang 26
Dakar 26
Brussels 24
Augusta 23
Milan 23
Montreal 23
Fuzhou 22
Lanzhou 20
Phoenix 20
San Paolo di Civitate 20
Warsaw 20
Atlanta 19
Brno 18
Chennai 18
Cornaredo 18
Brooklyn 17
Buffalo 17
Columbus 17
Taiyuan 17
Baghdad 16
Denver 16
Toronto 15
Council Bluffs 14
Johannesburg 14
Manchester 14
Norwalk 14
Orange 12
Ankara 11
Dresden 11
Düsseldorf 11
Jeddah 11
Poplar 11
Totale 14.542
Salva come PNG Salva come JPEG
Nome #
Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films 364
2DEG based on strained Si on SGOI substrate 314
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 314
2DEG based on strained Si on SGOI substrate 295
Atomic Force Microscopy and photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 293
Ballistic transport in strained-Si cavities: experiment and theory 290
Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth 289
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting 289
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 287
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells 286
Early stage of CVD graphene synthesis on Ge(001) substrate 284
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 278
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 275
Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping 272
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates 272
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 271
Epi-cleaning of Ge/GeSn heterostructures 264
'X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates 264
Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts 263
A single electron transistor based on Si/SiGe wires 260
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 255
Metal-Ge-Si heterostructures for near infrared light detection 252
Metal-semiconductor-metal near infrared light detector based on epitaxial Ge on Si 250
Ge-Si intermixing in Ge quantum dots on Si(100) and Si(111) 246
Driving with temperature the synthesis of graphene on Ge(110) 245
Sub-micron size Schottky junctions on as-grown monolayer epitaxial graphene on Ge(100): a low-invasive scanned-probe based study 244
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008 241
Investigation of SiGe-heterostructure nanowires 240
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 240
Ge/Si (001) Photodetector for Near Infrared Light” 240
Ion and electron beam deposited masks for pattern transfer by reactive ion etching 239
Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures 238
Evolution of Ge/Si(001) islands during Si capping at high temperature 235
Germanium quantum fountain structures on silicon substrates 234
Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100) 233
Atomic Force Microscopy study of self-organized Ge islands grown on Si(100) by Low Pressure Chemical Vapour Deposition 233
Conductance quantization in etched Si/SiGe quantum point contacts 233
Electronic states of thin epitaxial layers of Ge on Si(100) 232
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 231
Relaxed state of GexSi1-x islands embedded in Si 229
Zn nanoparticle formation in FIB irradiated single crystal ZnO 228
Abrupt Changes in the Graphene on Ge(001) System at the Onset of Surface Melting 227
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 227
Ge-Si intermixing in Ge quantum dots on Si 226
Single Electron Transistor based on modulation-doped SiGe heterostructures 225
Conductance anomalies in quantum point contacts 225
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 222
Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies 221
Photoluminescence from GeSn nano-heterostructures 219
Electron thermometry and refrigeration with doped silicon and superconducting electrodes 215
Ion and plasma based treatments for enhanced chemical speciation of metals in ferritin 213
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 212
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 212
Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si 211
Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas 210
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition 210
Electron-phonon coupling in n-type Ge two-dimensional systems 207
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 205
Field-induced tunneling in SiGe wires 203
Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation 202
Formation of extended thermal etch pits on annealed Ge wafers 202
Towards substrate removal in quasi-optical Schottky detector arrays 202
Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100) 200
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells 199
Evolution of Ge/Si(001) islands during Si capping at high temperature 198
Electrical Properties Of Modulation Doped Si/SiGe Heterostructures Grown On Silicon On Insulator Substrates 196
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures 193
Defects in SiGe virtual substrate for high mobility electron gas 193
Low temperature sputtered ITO on glass and epoxy resin substrates:influence of process parameters and substrate roughness on morphologicaland electrical properties 191
Photoelectric yield studies of c-Si/a-Si:H interfaces 190
N-Type Ge/SiGe Quantum Cascade Heterostructures for THz Emission 188
Low energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure 186
Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas 185
Misfit-Dislocation Distributions in Heteroepitaxy: From Mesoscale Measurements to Individual Defects and Back 185
Electron Population Dynamics in Optically Pumped Asymmetric Coupled Ge/SiGe Quantum Wells: Experiment and Models 185
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates 184
Quantum transport in low-dimensional AlGaN/GaN systems 183
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 181
Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source 180
Fisica mesoscopica in eterostrutture Si/SiGe 179
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 179
Low energy yield spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure 176
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 170
Dynamics of crosshatch patterns in heteroepitaxy 169
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00) 168
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 167
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing 167
Si/SiGe modulation-doped heterostructures grown on Silicon-On-Insulator substrates for high mobility two dimensional gases 165
Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction 165
Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells 165
Solid-phase epitaxi induced by low-power pulsed-laser annealing of III-V compound semiconductors 162
Strain relaxation by pit formation in SiGe alloy films grown on Si(001) 159
The photoelectric yield technique for the characterization of the semiconductor interfaces 152
Low field magnetotransport in strained Si-cavities 150
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures 146
Ultrastrong Coupling of Si1−xGex Parabolic Quantum Wells toTerahertz Microcavities 144
Strain driven photoluminescence properties of Ge quantum dots on strained and relaxed multi-layered islands on Si(001) 144
Femtosecond laser and reactive ion etching based treatments for nanoscale surface texturing of porous silicon carbide 143
Doped silicon and NIS junctions for bolometer applications RID F-6186-2010 139
THz Intersubband Emitter based on Silicon 136
Totale 21.800
Salva come PNG Salva come JPEG
Categoria #
all - tutte 77.008
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 77.008
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.043 0 0 56 35 190 31 214 62 78 38 93 246
2022/20231.779 211 309 117 300 129 323 2 134 157 12 50 35
2023/20241.231 36 56 117 34 80 422 78 185 24 38 18 143
2024/20252.764 26 72 321 45 37 161 1.043 385 169 123 155 227
2025/20265.284 438 621 261 596 568 422 753 264 532 589 142 98
2026/2027324 117 89 118 0 0 0 0 0 0 0 0 0
Totale 22.933