Benvenuti nell'Anagrafe della Ricerca d'Ateneo

CAPELLINI, GIOVANNI
 Distribuzione geografica
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Continente #
NA - Nord America 20.286
EU - Europa 13.680
AS - Asia 11.430
SA - Sud America 1.049
AF - Africa 197
OC - Oceania 39
Continente sconosciuto - Info sul continente non disponibili 16
Totale 46.697
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Nazione #
US - Stati Uniti d'America 20.032
CN - Cina 5.270
SG - Singapore 3.466
GB - Regno Unito 3.014
RU - Federazione Russa 2.852
DK - Danimarca 2.520
VN - Vietnam 1.298
DE - Germania 1.181
SE - Svezia 1.090
IT - Italia 959
BR - Brasile 768
UA - Ucraina 545
NL - Olanda 341
IE - Irlanda 253
FI - Finlandia 249
HK - Hong Kong 236
IN - India 199
AL - Albania 185
TR - Turchia 163
CA - Canada 132
FR - Francia 126
KR - Corea 104
BD - Bangladesh 100
JP - Giappone 98
AR - Argentina 95
MX - Messico 69
IQ - Iraq 66
PH - Filippine 56
ID - Indonesia 53
PK - Pakistan 52
PL - Polonia 52
ZA - Sudafrica 47
BE - Belgio 46
CO - Colombia 46
AT - Austria 45
ES - Italia 44
AU - Australia 38
VE - Venezuela 33
EC - Ecuador 32
MA - Marocco 31
SA - Arabia Saudita 30
CL - Cile 29
UZ - Uzbekistan 27
RO - Romania 26
CZ - Repubblica Ceca 23
MY - Malesia 22
SN - Senegal 22
TH - Thailandia 20
JO - Giordania 19
TW - Taiwan 19
GR - Grecia 18
KE - Kenya 18
LT - Lituania 18
AE - Emirati Arabi Uniti 17
CH - Svizzera 16
TN - Tunisia 16
MD - Moldavia 15
CI - Costa d'Avorio 14
IL - Israele 13
JM - Giamaica 12
NO - Norvegia 12
PE - Perù 12
BO - Bolivia 11
KG - Kirghizistan 11
NP - Nepal 11
PY - Paraguay 11
CR - Costa Rica 10
EG - Egitto 10
IR - Iran 10
KZ - Kazakistan 10
BG - Bulgaria 9
EU - Europa 9
AZ - Azerbaigian 8
LB - Libano 8
UY - Uruguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
ET - Etiopia 7
OM - Oman 7
DZ - Algeria 6
PS - Palestinian Territory 6
TT - Trinidad e Tobago 6
HR - Croazia 5
KH - Cambogia 5
LK - Sri Lanka 5
PA - Panama 5
PT - Portogallo 5
QA - Qatar 5
BB - Barbados 4
BY - Bielorussia 4
GT - Guatemala 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
AM - Armenia 3
BF - Burkina Faso 3
DO - Repubblica Dominicana 3
GE - Georgia 3
GY - Guiana 3
KW - Kuwait 3
LU - Lussemburgo 3
LV - Lettonia 3
Totale 46.643
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Città #
Southend 2.624
Fairfield 2.368
Woodbridge 2.167
Singapore 1.742
Ashburn 1.730
Ann Arbor 1.263
Houston 1.225
Wilmington 1.170
Chandler 1.066
San Jose 1.024
Seattle 958
Cambridge 756
Nanjing 735
Boardman 597
Dallas 592
Beijing 556
Dearborn 495
Hefei 423
Jacksonville 414
Princeton 339
Ho Chi Minh City 324
Rome 318
Shenyang 282
Dong Ket 279
Nanchang 265
New York 260
Jinan 247
Amsterdam 244
Dublin 241
Hanoi 233
Hong Kong 221
Eitensheim 212
Hebei 207
Moscow 200
Tianjin 195
Plano 194
Los Angeles 164
Changsha 147
San Diego 130
Bremen 129
The Dalles 128
Shanghai 127
Hangzhou 113
Guangzhou 112
Jiaxing 102
Munich 101
Izmir 99
Redwood City 96
Seoul 95
Orem 94
Zhengzhou 82
Frankfurt am Main 80
Tokyo 80
Helsinki 78
London 78
São Paulo 76
Kunming 73
Venezia 73
San Mateo 69
Altamura 68
Haikou 64
Taizhou 63
Santa Clara 61
Columbus 58
Haiphong 53
Ningbo 53
Da Nang 51
Redmond 51
Taiyuan 51
Chicago 49
Atlanta 46
Milan 46
Brussels 45
Lanzhou 45
Orange 45
Fuzhou 43
Montreal 43
Council Bluffs 42
Chennai 41
San Paolo di Civitate 41
Warsaw 40
Denver 36
Mumbai 35
Bari 33
Boston 33
Stockholm 33
Brooklyn 30
Buffalo 30
Manchester 30
Florence 29
Westminster 29
Vienna 28
Phoenix 27
San Francisco 25
Tashkent 25
Ankara 23
Hải Dương 23
Baghdad 22
Dakar 22
Rio de Janeiro 22
Totale 30.126
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Nome #
10Gbit/s transceiver on silicon 392
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 347
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 340
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 318
2DEG based on strained Si on SGOI substrate 290
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 286
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 285
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 283
In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application 280
Alternative High n-Type Doping Techniques in Germanium 278
Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputtering 278
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 274
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 273
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 272
N-type doping of germanium from phosphine: early stages resolved at the atomic level 270
Atomic Force Microscopy Lithography as a nanodevice development technique 269
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 268
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 268
Ba termination of Ge(001) studied with STM 267
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 263
Epi-cleaning of Ge/GeSn heterostructures 262
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport 261
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 259
Gate-controlled quantum dots and superconductivity in planar germanium 258
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 257
The thermal stability of epitaxial GeSn layers 250
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 248
Alignment control of self-ordered three dimensional SiGe nanodots 248
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys 247
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities 246
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 246
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 244
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 244
Growth Phase- and Desiccation-Dependent Acinetobacter baumannii Morphology: An Atomic Force Microscopy Investigation 244
MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS 244
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy 242
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy 241
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 241
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices 240
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer 238
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers 238
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 237
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 234
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 234
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics 234
N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS 232
Ge-Si intermixing in Ge quantum dots on Si 231
Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities 231
Ge/Si (001) photodetector for near infrared light 230
Growth and evolution of nickel germanide nanostructures on Ge(001) 230
Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers 229
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 229
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking 226
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 226
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 226
Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure 224
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 223
New avenues to an old material: controlled nanoscale doping of germanium 221
Growth and Characterization of SiGeSn Quantum Well Photodiodes 221
Interface and nanostructure evolution of Cobalt Germanides on Ge(001) 220
Fully coherent growth of Ge on free-standing Si(001)nano-mesas 220
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 220
Intermixing-promoted scaling of Ge/Si(100) island sizes 219
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) 219
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 219
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 219
Alternative semiconductor integration in Si microelectronics: materials, techniques & applications 218
Spontaneous Ge island ordering promoted by partial silicon capping 217
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth 217
CMOS Photonics Using Germanium Photodetectors 217
Epitaxy of direct bandgap group IV heterostructure lasers 217
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 217
Electronic states of thin epitaxial layers of Ge on Si(100) 217
Ultradense phosphorus in germanium delta-doped layers 216
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 215
Microstructure and magnetic properties of colloidal cobalt nano-clusters 215
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si 215
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 215
Conduction band intersubband transitions in Ge/SiGe quantum wells 214
Radiative recombination and optical gain spectra in biaxially strained n-type Germanium 214
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 214
Photoluminescence from GeSn nano-heterostructures 214
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 214
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 213
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 211
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation 209
Ge/Si(100) islands: growth dynamics versus growth rate 209
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 208
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 207
CMOS-compatible germanium tunable laser 207
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 207
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 207
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process 207
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 206
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 205
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach 202
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 202
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 202
“Ge photodetectors integrated in CMOS photonic circuits 201
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 200
Totale 23.822
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Categoria #
all - tutte 155.552
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 155.552
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.045 0 0 0 0 0 0 0 0 0 350 239 456
2021/20222.834 153 320 140 68 471 101 371 134 210 86 232 548
2022/20233.352 436 552 182 494 230 657 8 265 322 32 102 72
2023/20241.925 87 128 310 51 80 317 134 196 44 249 65 264
2024/20256.064 68 142 633 110 84 322 2.123 836 546 229 389 582
2025/202610.852 844 1.569 618 1.238 1.064 923 1.943 328 965 1.360 0 0
Totale 47.509