Benvenuti nell'Anagrafe della Ricerca d'Ateneo

CAPELLINI, GIOVANNI
 Distribuzione geografica
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Continente #
NA - Nord America 15.678
EU - Europa 9.808
AS - Asia 3.952
AF - Africa 32
OC - Oceania 32
Continente sconosciuto - Info sul continente non disponibili 16
SA - Sud America 2
Totale 29.520
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Nazione #
US - Stati Uniti d'America 15.639
CN - Cina 3.494
GB - Regno Unito 2.878
DK - Danimarca 2.517
SE - Svezia 1.056
DE - Germania 926
IT - Italia 667
UA - Ucraina 522
VN - Vietnam 279
NL - Olanda 259
IE - Irlanda 242
FI - Finlandia 201
RU - Federazione Russa 183
AL - Albania 177
TR - Turchia 99
FR - Francia 42
CA - Canada 36
AU - Australia 32
BE - Belgio 32
IN - India 27
RO - Romania 24
CI - Costa d'Avorio 14
SN - Senegal 14
MD - Moldavia 13
AT - Austria 12
GR - Grecia 12
NO - Norvegia 11
EU - Europa 9
IR - Iran 9
IQ - Iraq 8
PL - Polonia 8
A2 - ???statistics.table.value.countryCode.A2??? 7
JP - Giappone 7
BD - Bangladesh 5
CH - Svizzera 5
MY - Malesia 5
IL - Israele 4
BG - Bulgaria 3
TW - Taiwan 3
CZ - Repubblica Ceca 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LU - Lussemburgo 2
LV - Lettonia 2
MA - Marocco 2
PT - Portogallo 2
RS - Serbia 2
SA - Arabia Saudita 2
SG - Singapore 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
AZ - Azerbaigian 1
CO - Colombia 1
EG - Egitto 1
ES - Italia 1
HK - Hong Kong 1
HR - Croazia 1
IM - Isola di Man 1
JM - Giamaica 1
JO - Giordania 1
LI - Liechtenstein 1
LK - Sri Lanka 1
MK - Macedonia 1
MT - Malta 1
MX - Messico 1
PA - Panama 1
ZA - Sudafrica 1
Totale 29.520
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Città #
Southend 2.624
Fairfield 2.368
Woodbridge 2.166
Ann Arbor 1.263
Houston 1.203
Wilmington 1.163
Ashburn 1.119
Chandler 1.066
Seattle 947
Cambridge 756
Nanjing 732
Dearborn 495
Jacksonville 412
Princeton 339
Beijing 302
Dong Ket 279
Shenyang 279
Nanchang 264
Jinan 242
Dublin 230
Eitensheim 212
Amsterdam 208
Hebei 207
Rome 207
Plano 194
Tianjin 178
New York 158
Changsha 131
San Diego 130
Bremen 129
Hangzhou 108
Jiaxing 102
Izmir 98
Redwood City 96
Guangzhou 91
Zhengzhou 74
Kunming 73
Venezia 73
San Mateo 69
Altamura 68
Hefei 65
Boardman 64
Haikou 64
Taizhou 63
Shanghai 58
Helsinki 53
Ningbo 52
Redmond 50
Taiyuan 49
London 47
Orange 45
Lanzhou 44
San Paolo di Civitate 41
Fuzhou 40
Brussels 31
Bari 29
Westminster 29
Florence 27
Buffalo 26
Milan 21
Alameda 20
Los Angeles 19
Washington 19
Columbus 18
Mountain View 18
Atlanta 17
Augusta 17
Norwalk 17
Pune 17
Falls Church 16
North York 16
Stevenage 16
Fort Worth 15
Kilburn 15
Chiswick 14
Dakar 14
Chisinau 13
Genzano di Roma 13
Cornaredo 12
Flushing 12
Indiana 12
Menlo Park 12
Turin 12
Cologne 11
Dresden 11
Andover 10
Changchun 10
Toronto 10
Vienna 10
Auburn Hills 9
Berlin 8
Chicago 8
Hounslow 8
Lawrence 8
Saint Petersburg 8
San Francisco 8
Renton 7
Tappahannock 7
Wuhan 7
Xian 7
Totale 22.254
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Nome #
10Gbit/s transceiver on silicon 292
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 273
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 223
N-type doping of germanium from phosphine: early stages resolved at the atomic level 216
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 206
Ba termination of Ge(001) studied with STM 203
Epi-cleaning of Ge/GeSn heterostructures 202
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 202
In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application 201
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 201
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 193
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 192
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 187
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities 186
Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities 184
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 184
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 184
MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS 184
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 183
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy 183
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy 183
Interface and nanostructure evolution of Cobalt Germanides on Ge(001) 181
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 180
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking 178
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport 178
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 177
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices 177
2DEG based on strained Si on SGOI substrate 177
Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure 176
Epitaxy of direct bandgap group IV heterostructure lasers 176
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 176
Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers 175
Ge/Si (001) photodetector for near infrared light 175
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys 174
Fully coherent growth of Ge on free-standing Si(001)nano-mesas 173
Ge-Si intermixing in Ge quantum dots on Si 173
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 172
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 172
Ultradense phosphorus in germanium delta-doped layers 172
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 172
Intermixing-promoted scaling of Ge/Si(100) island sizes 171
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 171
N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS 170
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 170
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 169
Conduction band intersubband transitions in Ge/SiGe quantum wells 169
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 169
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 169
New avenues to an old material: controlled nanoscale doping of germanium 168
CMOS Photonics Using Germanium Photodetectors 168
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers 168
Growth and evolution of nickel germanide nanostructures on Ge(001) 168
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 167
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 166
Spontaneous Ge island ordering promoted by partial silicon capping 165
“Ge photodetectors integrated in CMOS photonic circuits 165
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation 165
The thermal stability of epitaxial GeSn layers 165
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) 165
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 164
Growth and Characterization of SiGeSn Quantum Well Photodiodes 164
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 164
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 163
Microstructure and magnetic properties of colloidal cobalt nano-clusters 162
Radiative recombination and optical gain spectra in biaxially strained n-type Germanium 162
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer 161
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si 160
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 160
Gate-controlled quantum dots and superconductivity in planar germanium 160
Electronic states of thin epitaxial layers of Ge on Si(100) 160
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process 160
Towards substrate removal in quasi-optical Schottky detector arrays 159
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser 158
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 158
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 158
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 157
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth 157
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 157
Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation 157
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach 156
SiGe intermixing in Ge/Si(100) islands 156
Alternative High n-Type Doping Techniques in Germanium 156
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 156
Monolithically Integrated High-Speed CMOS Photonic Transceivers 155
Ge/Si(100) islands: growth dynamics versus growth rate 155
Evolution of the intermixing process in Ge/Si(111) Self-assembled islands 155
Ordered growth of Ge island clusters on strain-engineered Si surfaces 155
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 154
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 154
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 154
Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies 152
Bottom-up assembly of metallic germanium 151
Self-ordering of a Ge island single layer induced by Si overgrowth 150
Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing 150
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001) 150
Alignment control of self-ordered three dimensional SiGe nanodots 150
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 147
Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy 146
Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si 146
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 145
Totale 17.178
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Categoria #
all - tutte 87.949
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 87.949
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.053 0 0 0 0 0 0 0 0 0 0 1.075 978
2019/20207.903 1.494 491 243 793 620 690 951 714 1.267 255 234 151
2020/20214.263 188 213 307 336 408 347 461 596 362 350 239 456
2021/20222.834 153 320 140 68 471 101 371 134 210 86 232 548
2022/20233.352 436 552 182 494 230 657 8 265 322 32 102 72
2023/20241.604 87 128 310 51 80 317 134 196 44 249 8 0
Totale 30.272