Benvenuti nell'Anagrafe della Ricerca d'Ateneo

CAPELLINI, GIOVANNI
 Distribuzione geografica
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Continente #
NA - Nord America 20.989
EU - Europa 13.830
AS - Asia 11.557
SA - Sud America 1.063
AF - Africa 197
OC - Oceania 39
Continente sconosciuto - Info sul continente non disponibili 16
Totale 47.691
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Nazione #
US - Stati Uniti d'America 20.691
CN - Cina 5.286
SG - Singapore 3.474
GB - Regno Unito 3.015
RU - Federazione Russa 2.853
DK - Danimarca 2.520
VN - Vietnam 1.298
DE - Germania 1.183
SE - Svezia 1.090
IT - Italia 1.089
BR - Brasile 773
UA - Ucraina 546
NL - Olanda 342
IE - Irlanda 254
FI - Finlandia 250
HK - Hong Kong 237
IN - India 200
BD - Bangladesh 196
AL - Albania 185
TR - Turchia 163
CA - Canada 155
FR - Francia 128
KR - Corea 104
JP - Giappone 100
AR - Argentina 97
MX - Messico 76
IQ - Iraq 66
PH - Filippine 56
ID - Indonesia 55
PL - Polonia 53
PK - Pakistan 52
CO - Colombia 48
BE - Belgio 47
ZA - Sudafrica 47
ES - Italia 46
AT - Austria 45
AU - Australia 38
VE - Venezuela 34
EC - Ecuador 32
MA - Marocco 31
CL - Cile 30
SA - Arabia Saudita 30
UZ - Uzbekistan 27
RO - Romania 26
CZ - Repubblica Ceca 24
MY - Malesia 22
SN - Senegal 22
TH - Thailandia 20
JO - Giordania 19
LT - Lituania 19
TW - Taiwan 19
GR - Grecia 18
KE - Kenya 18
AE - Emirati Arabi Uniti 17
JM - Giamaica 17
CH - Svizzera 16
TN - Tunisia 16
MD - Moldavia 15
PE - Perù 15
CI - Costa d'Avorio 14
CR - Costa Rica 13
IL - Israele 13
NO - Norvegia 13
NP - Nepal 12
BO - Bolivia 11
KG - Kirghizistan 11
PY - Paraguay 11
EG - Egitto 10
IR - Iran 10
KZ - Kazakistan 10
BG - Bulgaria 9
EU - Europa 9
AZ - Azerbaigian 8
LB - Libano 8
UY - Uruguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
ET - Etiopia 7
OM - Oman 7
PT - Portogallo 7
TT - Trinidad e Tobago 7
DZ - Algeria 6
PS - Palestinian Territory 6
BB - Barbados 5
GT - Guatemala 5
HR - Croazia 5
KH - Cambogia 5
LK - Sri Lanka 5
PA - Panama 5
QA - Qatar 5
SK - Slovacchia (Repubblica Slovacca) 5
BY - Bielorussia 4
HN - Honduras 4
RS - Serbia 4
AM - Armenia 3
BF - Burkina Faso 3
DO - Repubblica Dominicana 3
GE - Georgia 3
GY - Guiana 3
KW - Kuwait 3
LU - Lussemburgo 3
Totale 47.635
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Città #
Southend 2.624
Fairfield 2.368
Woodbridge 2.167
Ashburn 1.844
Singapore 1.744
Ann Arbor 1.263
Houston 1.227
San Jose 1.219
Wilmington 1.172
Chandler 1.066
Seattle 964
Cambridge 758
Nanjing 735
Dallas 605
Boardman 597
Beijing 562
Dearborn 495
Hefei 424
Jacksonville 414
Rome 360
Princeton 339
Ho Chi Minh City 324
Shenyang 282
New York 281
Dong Ket 279
Nanchang 265
Jinan 247
Amsterdam 244
Dublin 242
Hanoi 233
Hong Kong 222
Eitensheim 212
Hebei 207
Moscow 201
Tianjin 195
Plano 194
Los Angeles 172
Changsha 147
San Diego 132
The Dalles 130
Bremen 129
Shanghai 128
Hangzhou 113
Guangzhou 112
Jiaxing 102
Munich 101
Izmir 99
Redwood City 96
Seoul 95
Orem 94
Zhengzhou 82
Frankfurt am Main 80
Tokyo 80
Santa Clara 79
Helsinki 78
London 78
São Paulo 77
Kunming 73
Venezia 73
San Mateo 69
Altamura 68
Haikou 64
Taizhou 63
Columbus 58
Milan 55
Haiphong 53
Ningbo 53
Atlanta 51
Da Nang 51
Redmond 51
Taiyuan 51
Chicago 50
Montreal 48
Brussels 45
Lanzhou 45
Orange 45
Council Bluffs 44
Fuzhou 43
Chennai 41
San Paolo di Civitate 41
Warsaw 40
Denver 38
Buffalo 36
Mumbai 35
Bari 34
Boston 33
Florence 33
Stockholm 33
Brooklyn 31
Manchester 30
Phoenix 29
Westminster 29
Vienna 28
San Francisco 25
Tashkent 25
Toronto 25
Ankara 23
Hải Dương 23
Baghdad 22
Dakar 22
Totale 30.608
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Nome #
10Gbit/s transceiver on silicon 394
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 348
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 343
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 323
Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputtering 295
2DEG based on strained Si on SGOI substrate 292
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 288
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 287
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 286
In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application 282
Alternative High n-Type Doping Techniques in Germanium 279
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 277
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 277
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 273
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 273
N-type doping of germanium from phosphine: early stages resolved at the atomic level 271
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 270
Atomic Force Microscopy Lithography as a nanodevice development technique 270
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 268
Ba termination of Ge(001) studied with STM 267
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 266
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport 264
Epi-cleaning of Ge/GeSn heterostructures 263
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 262
Gate-controlled quantum dots and superconductivity in planar germanium 260
Growth Phase- and Desiccation-Dependent Acinetobacter baumannii Morphology: An Atomic Force Microscopy Investigation 256
The thermal stability of epitaxial GeSn layers 253
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 252
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 252
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities 250
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 250
Alignment control of self-ordered three dimensional SiGe nanodots 250
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys 249
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 248
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 248
MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS 248
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking 245
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy 244
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 244
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy 242
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices 242
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers 242
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 242
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer 241
N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS 239
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 238
Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities 236
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 236
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics 235
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 235
Ge-Si intermixing in Ge quantum dots on Si 233
Growth and evolution of nickel germanide nanostructures on Ge(001) 232
Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure 231
Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers 231
Ge/Si (001) photodetector for near infrared light 231
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 230
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 227
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 226
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 226
New avenues to an old material: controlled nanoscale doping of germanium 224
Growth and Characterization of SiGeSn Quantum Well Photodiodes 224
Interface and nanostructure evolution of Cobalt Germanides on Ge(001) 223
Fully coherent growth of Ge on free-standing Si(001)nano-mesas 221
Intermixing-promoted scaling of Ge/Si(100) island sizes 221
Microstructure and magnetic properties of colloidal cobalt nano-clusters 221
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) 221
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 221
Alternative semiconductor integration in Si microelectronics: materials, techniques & applications 220
Ultradense phosphorus in germanium delta-doped layers 220
CMOS Photonics Using Germanium Photodetectors 220
Epitaxy of direct bandgap group IV heterostructure lasers 220
Spontaneous Ge island ordering promoted by partial silicon capping 219
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 219
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 218
Electronic states of thin epitaxial layers of Ge on Si(100) 218
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 218
Spontaneous ordering of self-assembled-Ge island 217
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si 217
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth 217
Photoluminescence from GeSn nano-heterostructures 217
Conduction band intersubband transitions in Ge/SiGe quantum wells 216
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 216
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 216
Radiative recombination and optical gain spectra in biaxially strained n-type Germanium 215
Ge/Si(100) islands: growth dynamics versus growth rate 215
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 214
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 212
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 212
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation 211
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 211
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process 211
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 210
CMOS-compatible germanium tunable laser 209
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 209
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 208
Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies 207
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 207
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 206
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 204
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 204
Totale 24.191
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Categoria #
all - tutte 164.463
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 164.463
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.834 153 320 140 68 471 101 371 134 210 86 232 548
2022/20233.352 436 552 182 494 230 657 8 265 322 32 102 72
2023/20241.925 87 128 310 51 80 317 134 196 44 249 65 264
2024/20256.064 68 142 633 110 84 322 2.123 836 546 229 389 582
2025/202611.676 844 1.569 618 1.238 1.064 923 1.943 328 965 1.458 438 288
2026/2027174 174 0 0 0 0 0 0 0 0 0 0 0
Totale 48.507