CAPELLINI, GIOVANNI
 Distribuzione geografica
Continente #
NA - Nord America 16.288
EU - Europa 9.983
AS - Asia 4.489
AF - Africa 32
OC - Oceania 32
Continente sconosciuto - Info sul continente non disponibili 16
SA - Sud America 8
Totale 30.848
Nazione #
US - Stati Uniti d'America 16.244
CN - Cina 3.651
GB - Regno Unito 2.885
DK - Danimarca 2.517
SE - Svezia 1.056
DE - Germania 962
IT - Italia 745
UA - Ucraina 524
SG - Singapore 328
VN - Vietnam 279
NL - Olanda 263
IE - Irlanda 246
FI - Finlandia 210
RU - Federazione Russa 187
AL - Albania 177
TR - Turchia 101
FR - Francia 44
CA - Canada 40
BE - Belgio 39
JP - Giappone 38
AU - Australia 32
IN - India 27
RO - Romania 25
CZ - Repubblica Ceca 20
CI - Costa d'Avorio 14
SN - Senegal 14
AT - Austria 13
MD - Moldavia 13
GR - Grecia 12
NO - Norvegia 11
KR - Corea 10
EU - Europa 9
IR - Iran 9
PL - Polonia 9
ID - Indonesia 8
IQ - Iraq 8
A2 - ???statistics.table.value.countryCode.A2??? 7
BD - Bangladesh 5
CH - Svizzera 5
IL - Israele 5
MY - Malesia 5
BG - Bulgaria 3
BR - Brasile 3
CL - Cile 3
HK - Hong Kong 3
TW - Taiwan 3
KG - Kirghizistan 2
KZ - Kazakistan 2
LU - Lussemburgo 2
LV - Lettonia 2
MA - Marocco 2
PA - Panama 2
PT - Portogallo 2
RS - Serbia 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
AR - Argentina 1
AZ - Azerbaigian 1
CO - Colombia 1
EG - Egitto 1
ES - Italia 1
HR - Croazia 1
IM - Isola di Man 1
JM - Giamaica 1
JO - Giordania 1
LI - Liechtenstein 1
LK - Sri Lanka 1
LT - Lituania 1
MK - Macedonia 1
MT - Malta 1
MX - Messico 1
ZA - Sudafrica 1
Totale 30.848
Città #
Southend 2.624
Fairfield 2.368
Woodbridge 2.166
Ann Arbor 1.263
Houston 1.203
Wilmington 1.163
Ashburn 1.127
Chandler 1.066
Seattle 947
Cambridge 756
Nanjing 733
Boardman 595
Dearborn 495
Jacksonville 412
Princeton 339
Beijing 303
Dong Ket 279
Shenyang 279
Nanchang 264
Jinan 242
Rome 241
Dublin 234
Eitensheim 212
Amsterdam 211
Hebei 207
Singapore 206
Plano 194
Tianjin 179
New York 158
Changsha 131
San Diego 130
Bremen 129
Shanghai 115
Hangzhou 108
Jiaxing 102
Izmir 98
Redwood City 96
Guangzhou 92
Zhengzhou 74
Kunming 73
Venezia 73
San Mateo 69
Altamura 68
Hefei 65
Haikou 64
Taizhou 63
Helsinki 59
Ningbo 52
Redmond 50
Taiyuan 49
London 48
Orange 45
Lanzhou 44
San Paolo di Civitate 41
Fuzhou 40
Brussels 38
Tokyo 33
Munich 30
Bari 29
Westminster 29
Dallas 27
Florence 27
Milan 27
Buffalo 26
Los Angeles 24
Alameda 20
Brno 20
Washington 19
Columbus 18
Mountain View 18
Atlanta 17
Augusta 17
Norwalk 17
Pune 17
Falls Church 16
North York 16
Stevenage 16
Fort Worth 15
Kilburn 15
Chiswick 14
Dakar 14
Chisinau 13
Genzano di Roma 13
Cornaredo 12
Flushing 12
Indiana 12
Menlo Park 12
Turin 12
Cologne 11
Dresden 11
Toronto 11
Vienna 11
Andover 10
Changchun 10
Seoul 10
Auburn Hills 9
Berlin 9
Santa Clara 9
Chicago 8
Hounslow 8
Totale 23.206
Nome #
10Gbit/s transceiver on silicon 301
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 279
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 233
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 223
N-type doping of germanium from phosphine: early stages resolved at the atomic level 221
In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application 211
Ba termination of Ge(001) studied with STM 208
Epi-cleaning of Ge/GeSn heterostructures 205
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 205
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 205
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 200
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 195
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities 193
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 190
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 190
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 190
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 189
Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities 188
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 188
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy 187
2DEG based on strained Si on SGOI substrate 187
MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS 187
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy 186
Interface and nanostructure evolution of Cobalt Germanides on Ge(001) 184
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 184
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport 183
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers 183
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices 182
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking 181
Epitaxy of direct bandgap group IV heterostructure lasers 180
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 179
Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure 179
Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers 179
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys 179
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 178
Ge/Si (001) photodetector for near infrared light 178
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 177
Fully coherent growth of Ge on free-standing Si(001)nano-mesas 176
Ge-Si intermixing in Ge quantum dots on Si 176
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 175
Ultradense phosphorus in germanium delta-doped layers 175
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 175
Intermixing-promoted scaling of Ge/Si(100) island sizes 174
New avenues to an old material: controlled nanoscale doping of germanium 174
N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS 174
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 174
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 173
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 173
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 173
Growth and evolution of nickel germanide nanostructures on Ge(001) 173
Conduction band intersubband transitions in Ge/SiGe quantum wells 172
The thermal stability of epitaxial GeSn layers 172
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 172
CMOS Photonics Using Germanium Photodetectors 171
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 171
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation 170
Spontaneous Ge island ordering promoted by partial silicon capping 169
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 169
“Ge photodetectors integrated in CMOS photonic circuits 168
Gate-controlled quantum dots and superconductivity in planar germanium 168
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) 168
Growth and Characterization of SiGeSn Quantum Well Photodiodes 168
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 168
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer 167
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 167
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 167
Microstructure and magnetic properties of colloidal cobalt nano-clusters 166
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 166
Radiative recombination and optical gain spectra in biaxially strained n-type Germanium 165
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 165
Alternative High n-Type Doping Techniques in Germanium 164
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process 164
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si 163
Electronic states of thin epitaxial layers of Ge on Si(100) 163
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 162
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 161
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser 161
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 161
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth 161
Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation 161
Towards substrate removal in quasi-optical Schottky detector arrays 161
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 160
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach 159
SiGe intermixing in Ge/Si(100) islands 159
Ge/Si(100) islands: growth dynamics versus growth rate 159
Evolution of the intermixing process in Ge/Si(111) Self-assembled islands 159
Ordered growth of Ge island clusters on strain-engineered Si surfaces 159
Monolithically Integrated High-Speed CMOS Photonic Transceivers 158
Alignment control of self-ordered three dimensional SiGe nanodots 158
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 157
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 157
Investigation of Ge on Si(100) quantum wells by Photoelectron Spectroscopies 155
Bottom-up assembly of metallic germanium 155
Self-ordering of a Ge island single layer induced by Si overgrowth 154
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001) 154
Germanium Plasmon Enhanced Resonators for Label-Free Terahertz Protein Sensing 153
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 152
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics 151
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 151
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 150
Totale 17.663
Categoria #
all - tutte 103.834
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 103.834


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.882 0 0 0 0 620 690 951 714 1.267 255 234 151
2020/20214.263 188 213 307 336 408 347 461 596 362 350 239 456
2021/20222.834 153 320 140 68 471 101 371 134 210 86 232 548
2022/20233.352 436 552 182 494 230 657 8 265 322 32 102 72
2023/20241.925 87 128 310 51 80 317 134 196 44 249 65 264
2024/20251.025 68 142 633 110 72 0 0 0 0 0 0 0
Totale 31.618