Benvenuti nell'Anagrafe della Ricerca d'Ateneo

CAPELLINI, GIOVANNI
 Distribuzione geografica
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Continente #
NA - Nord America 21.416
EU - Europa 13.876
AS - Asia 11.580
SA - Sud America 1.114
Continente sconosciuto - Info sul continente non disponibili 838
AF - Africa 197
OC - Oceania 39
Totale 49.060
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Nazione #
US - Stati Uniti d'America 21.066
CN - Cina 5.269
SG - Singapore 3.466
GB - Regno Unito 3.013
RU - Federazione Russa 2.837
DK - Danimarca 2.520
VN - Vietnam 1.287
DE - Germania 1.183
IT - Italia 1.163
SE - Svezia 1.083
BR - Brasile 791
UA - Ucraina 546
NL - Olanda 340
IE - Irlanda 254
FI - Finlandia 250
HK - Hong Kong 243
BD - Bangladesh 220
IN - India 198
AL - Albania 184
CA - Canada 175
TR - Turchia 167
FR - Francia 127
KR - Corea 104
JP - Giappone 99
AR - Argentina 98
MX - Messico 80
IQ - Iraq 66
ID - Indonesia 60
PH - Filippine 59
CO - Colombia 58
PL - Polonia 53
PK - Pakistan 52
BE - Belgio 47
ZA - Sudafrica 47
ES - Italia 46
AT - Austria 45
EC - Ecuador 41
VE - Venezuela 41
AU - Australia 38
SA - Arabia Saudita 33
MA - Marocco 31
CL - Cile 30
MY - Malesia 28
UZ - Uzbekistan 27
RO - Romania 26
CZ - Repubblica Ceca 24
JM - Giamaica 24
TH - Thailandia 24
SN - Senegal 22
JO - Giordania 19
LT - Lituania 19
TW - Taiwan 19
AE - Emirati Arabi Uniti 18
GR - Grecia 18
KE - Kenya 18
PE - Perù 18
CR - Costa Rica 17
CH - Svizzera 16
TN - Tunisia 16
IL - Israele 15
CI - Costa d'Avorio 14
MD - Moldavia 14
NP - Nepal 14
BO - Bolivia 13
NO - Norvegia 13
PY - Paraguay 12
KG - Kirghizistan 11
KZ - Kazakistan 11
EG - Egitto 10
IR - Iran 10
BG - Bulgaria 9
EU - Europa 9
LB - Libano 9
AZ - Azerbaigian 8
GT - Guatemala 8
TT - Trinidad e Tobago 8
UY - Uruguay 8
A2 - ???statistics.table.value.countryCode.A2??? 7
ET - Etiopia 7
OM - Oman 7
PT - Portogallo 7
BB - Barbados 6
DZ - Algeria 6
PA - Panama 6
PS - Palestinian Territory 6
HR - Croazia 5
KH - Cambogia 5
LK - Sri Lanka 5
QA - Qatar 5
SK - Slovacchia (Repubblica Slovacca) 5
BY - Bielorussia 4
HN - Honduras 4
NI - Nicaragua 4
RS - Serbia 4
AM - Armenia 3
BF - Burkina Faso 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GE - Georgia 3
GY - Guiana 3
Totale 48.170
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Città #
Southend 2.616
Fairfield 2.340
Woodbridge 2.157
Ashburn 1.937
Singapore 1.743
Ann Arbor 1.262
San Jose 1.250
Houston 1.225
Wilmington 1.168
Chandler 1.058
Seattle 956
Cambridge 754
Nanjing 732
Dallas 600
Boardman 594
Beijing 566
Dearborn 492
Hefei 424
Jacksonville 416
Rome 372
Princeton 338
Ho Chi Minh City 324
New York 280
Shenyang 279
Dong Ket 267
Nanchang 264
Jinan 246
Amsterdam 242
Dublin 241
Hanoi 233
Hong Kong 228
Eitensheim 211
Hebei 204
Moscow 201
Tianjin 195
Plano 193
Los Angeles 183
Changsha 147
San Diego 137
The Dalles 129
Bremen 128
Shanghai 127
Hangzhou 113
Guangzhou 111
Santa Clara 105
Jiaxing 101
Munich 100
Izmir 99
Redwood City 96
Seoul 95
Orem 93
Zhengzhou 82
São Paulo 81
Frankfurt am Main 80
Tokyo 79
Helsinki 78
London 78
Kunming 73
Venezia 73
Altamura 68
San Mateo 68
Milan 65
Haikou 64
Taizhou 62
Atlanta 59
Columbus 59
Chicago 57
Haiphong 53
Ningbo 53
Da Nang 51
Redmond 51
Taiyuan 51
Montreal 50
Council Bluffs 46
Brussels 45
Lanzhou 45
Orange 44
Fuzhou 43
Buffalo 41
San Paolo di Civitate 41
Chennai 40
Warsaw 40
Phoenix 39
Denver 38
Bari 36
Brooklyn 36
Florence 35
Mumbai 35
Boston 34
Stockholm 33
Manchester 30
Toronto 30
Westminster 29
Vienna 28
San Francisco 27
Tashkent 25
Ankara 24
Hải Dương 23
Rio de Janeiro 23
Baghdad 22
Totale 30.739
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Nome #
10Gbit/s transceiver on silicon 398
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector 353
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers 346
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 326
Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputtering 304
2DEG based on strained Si on SGOI substrate 298
Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates 292
Atomic Force Microscopy and Photoluminescence study of Ge layers and self-organized Ge quantum dots on Si(100) 288
Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells 288
In vitro biocompatibility study of sub-5 nm silica-coated magnetic iron oxide fluorescent nanoparticles for potential biomedical application 285
Alternative High n-Type Doping Techniques in Germanium 282
N-type doping of germanium from phosphine: early stages resolved at the atomic level 279
A Complete Fabrication Route for Atomic-Scale, Donor-Based Devices in Single-Crystal Germanium 279
n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser 279
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 276
Alloying in Ge(Si)/Si(001) self-assembled islands during their growth and capping: XPS and AFM study 274
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration 274
Atomic Force Microscopy Lithography as a nanodevice development technique 272
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 270
Ba termination of Ge(001) studied with STM 268
Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells 267
Stacking of 2D electron gases in Ge probed at the atomic-level and its correlation to low temperature magnetotransport 267
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition 266
Epi-cleaning of Ge/GeSn heterostructures 265
Growth Phase- and Desiccation-Dependent Acinetobacter baumannii Morphology: An Atomic Force Microscopy Investigation 265
Gate-controlled quantum dots and superconductivity in planar germanium 264
The thermal stability of epitaxial GeSn layers 263
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 260
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 256
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking 255
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities 254
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 253
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 253
GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study 251
MAGNETIC PROPERTIES OF COLLOIDAL COBALT NANOCLUSTERS 251
Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells 250
Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy 249
Compositional dependence of the band-gap of Ge1-x-YSixSny alloys 249
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 248
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy 247
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer 245
Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices 244
N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS 244
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers 244
Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities 240
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors 240
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 237
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 237
Spontaneous ordering of self-assembled-Ge island 236
Ge-Si intermixing in Ge quantum dots on Si 235
Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers 235
Ge/Si (001) photodetector for near infrared light 235
Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics 235
Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure 234
Growth and evolution of nickel germanide nanostructures on Ge(001) 234
N-Type Ge/SiGe Multi-Quantum Wells for THz Light Emission: High Quality Growth and Material Parameter Calibration 232
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 231
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 230
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 228
New avenues to an old material: controlled nanoscale doping of germanium 228
Growth and Characterization of SiGeSn Quantum Well Photodiodes 228
Fully coherent growth of Ge on free-standing Si(001)nano-mesas 226
Epitaxy of direct bandgap group IV heterostructure lasers 225
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) 225
Interface and nanostructure evolution of Cobalt Germanides on Ge(001) 224
High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain 224
Microstructure and magnetic properties of colloidal cobalt nano-clusters 223
Alternative semiconductor integration in Si microelectronics: materials, techniques & applications 223
Intermixing-promoted scaling of Ge/Si(100) island sizes 222
Ultradense phosphorus in germanium delta-doped layers 222
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 222
Spontaneous Ge island ordering promoted by partial silicon capping 221
CMOS Photonics Using Germanium Photodetectors 221
Electronic states of thin epitaxial layers of Ge on Si(100) 221
Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures4 221
Photoluminescence from GeSn nano-heterostructures 221
Conduction band intersubband transitions in Ge/SiGe quantum wells 220
Ge/Si(100) islands: growth dynamics versus growth rate 219
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 218
Evolution of strained Ge islands grown on Si(111): a scanning probe microscopy study 218
Radiative recombination and optical gain spectra in biaxially strained n-type Germanium 217
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si 217
Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth 217
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 216
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates 216
Terahertz Spectroscopy of Germanium Quantum Wells on Silicon Substrate for Terahertz Photonics 216
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 216
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process 215
Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) 213
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 213
Effect of interlayer strain interaction on the island composition and ordering in Ge/Si(001) island superlattices 212
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation 212
CMOS-compatible germanium tunable laser 212
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 210
Long Intersubband Relaxation Times in n-type Germanium Quantum Wells 209
Electron-phonon coupling in n-type Ge two-dimensional systems 209
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach 208
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 208
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 208
Effect of inter-layer strain interaction on the optical properties of Ge/Si(001) island multi-layers 207
Totale 24.483
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Categoria #
all - tutte 170.242
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 170.242
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.351 0 0 138 68 469 101 370 133 209 86 231 546
2022/20233.330 435 547 181 491 227 654 8 263 319 32 101 72
2023/20241.915 87 127 309 51 80 314 133 196 44 248 64 262
2024/20256.029 68 142 630 110 82 322 2.107 830 542 229 387 580
2025/202611.615 838 1.561 617 1.229 1.059 917 1.936 325 959 1.449 438 287
2026/2027976 286 235 455 0 0 0 0 0 0 0 0 0
Totale 49.060